0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BYT13-800

BYT13-800

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BYT13-800 - FAST RECOVERY RECTIFIER DIODES - STMicroelectronics

  • 数据手册
  • 价格&库存
BYT13-800 数据手册
® BYT 13-600 →1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current Power Dissipation * Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case tp ≤ 20µs Ta = 55°C δ = 0.5 tp = 10ms Sinusoidal Ta = 55°C DO-201AD (Plastic) Value 50 3 100 3.75 - 40 to + 150 - 40 to + 150 230 Unit A A A W °C °C Symbol VRRM Parameter 600 Repetitive Peak Reverse Voltage 600 BYT 13800 800 1000 1000 Unit V THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 25 Unit °C/W * On infinite heatsink with 10mm lead length. August 1998 Ed : 1B 1/4 BYT13-600 → 1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR VF Tj = 25°C Tj = 25°C Test Conditions VR = VRRM IF = 3A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 150 Unit ns To evaluate the conduction losses use the following equations: VF = 0.95 + 0.050 IF P = 0.95 x IF(AV) + 0.050 IF2(RMS) F i gu re 1. Max i mum ave ra ge p ower dissipation versus average forward current. Figure 2. Average forward current versus ambient temperature. Figure 3. Thermal resistance versus lead length. Mounting n°1 INFINITE HEATSINK Mounting n°2 PRINTED CIRCUIT 2/4 BYT 13-600 → 1000 F igure 4. Transient thermal impedance junction-ambient for mounting n°2 versus pulse duration (L = 10 mm). Figure 5. Peak forward current versus peak forward voltage drop (maximum values). Figure 6. Capacitance versus reverse applied voltage Figure 7. Non repetitive surge peak current versus number of cycles 3/4 BYT13-600 → 1000 PACKAGE MECHANICAL DATA DO-201AD (Plastic) B A B ØC note 1 E E note 1 ØD ØD note 2 REF. A B ∅C ∅D E DIMENSIONS NOTES Millimeters Inches Min. Max. Min. Max. 9.50 0.374 1 - The lead diameter ∅ D is not controlled over zone E 25.40 1.000 2 - The minimum axial lengh within which the device may be 5.30 0.209 placed with its leads bent at right angles is 0.59"(15 mm) 1.30 0.051 1.25 0.049 Marking : type number, white band indicates cathode Cooling method : by convection (method A) Weight : 1.166g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4
BYT13-800 价格&库存

很抱歉,暂时无法提供与“BYT13-800”相匹配的价格&库存,您可以联系我们找货

免费人工找货