BYT200PIV-400

® BYT200PIV-400 ULTRAFAST POWER RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS n 2 x100 A 400 V 1.4 V A1 A2 K1 K2 2 1 1= 2= 3= 4= A1 K1 A2 K2 4 n n n LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY ISOLATED PACKAGE : 2500 VDC CAPACITANCE 42pF 3 DESCRIPTION High current power rectifier diode suited for Switched Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in a medi um v oltage high c urrent applic ations such as welding equ ipment and Telecom su pplies. ABSOLUTE MAXIMUM RATING Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak forward current Storage temperature range Maximum junction temperature Tc = 80° C δ = 0.5 tp = 10 ms Sinusoidal tp ® 10 µs ISOTOPTM Value 400 150 100 600 800 - 40 to + 150 150 Unit V A A A A °C °C ISOTOP is a trademark of STMicroelectronics May 2000 - Ed: 3C 1/5 BYT200PIV-400 THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per leg Total Coupling Value 0.55 0.33 0.1 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25° C Tj = 100°C Tj = 25° C Tj = 125° C Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2% Min. Typ. 4 Max. 120 12 1.6 1.4 Unit µA mA V VR = VRRM IF = 100 A IF = 100 A 0.95 RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Test Conditions IF=0.5A IR=1A Irr=0.25A IF=1A dI/dt= -50A/µs Vr=30V dIF/dt=-200A/µs VR=400V dIF/dt=-200A/µs VR=400V Tj=125°C IF=100A Tj=125°C IF=100A 0.25 500 12 ns V Min. Typ. 55 100 40 A Max. Unit ns IRM S factor tfr VFP Reverse recovery current Softness factor Forward recovery time Peak forward voltage IF=100A dIF/dt=500A/µs Measured at 1.1 x VF max. Tj=25°C To evaluate the conduction losses use the following equation : P = 0.8 x IF(AV) + 0.00228 x IF2(RMS) 2/5 BYT200PIV-400 Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode). PF(av)(W) 140 120 100 80 60 40 20 0 0 100 δ = 0.05 δ = 0.1 δ = 0.2 δ= 1 IM(A) 500 δ = 0.5 400 300 200 P=100W P=75W P=125W P=150W IF(av) (A) 10 20 30 40 50 60 70 80 90 100 110 120 130 0 0.0 0.1 0.2 0.3 0.4 δ 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Average forward current versus ambient temperature (δ = 0.5, per diode). Fig. 4: Non repetitive surge peak forward current versus overload duration (per diode). IF(av)(A) 120 Rth(j-a)=Rth(j-c) IM(A) 700 600 500 400 300 Tc=50°C Tc=75°C 100 80 60 40 20 0 0 25 50 Rth(j-a)=2°C/W 200 Tamb(°C) 75 100 125 150 100 0 1E-3 1E-2 Tc=100°C t(s) 1E-1 1E+0 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). K=[Zth(j-c)/Rth(j-c)] 1.0 δ = 0.5 IFM(A) 500 100 0.5 δ = 0.2 Tj=125°C Tj=25°C δ = 0.1 0.2 Single pulse 10 tp(s) 1E-2 1E-1 1E+0 VFM(V) 1 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.1 1E-3 3/5 BYT200PIV-400 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 8: Recovery charges versus dIF/dt (per diode). C(pF) 500 450 400 350 300 250 200 150 100 1 VR(V) 10 100 200 0.5 0.0 2.0 1.5 1.0 F=1MHz Tj=25°C Qrr( µC) 3.0 2.5 IF=IF(av) 90% confidence Tj=125°C dIF/dt(A/µs) 0 100 200 300 400 500 Fig. 9: Recovery current versus dIF/dt (per diode). Fig. 10: Transient peak forward voltage versus dIF/dt (per diode). IRM(A) 50 45 40 35 30 25 20 15 10 5 0 14 IF=IF(av) 90% confidence Tj=125°C VFP(V) 12 10 8 6 4 IF=IF(av) 90% confidence Tj=125°C dIF/dt(A/µs) 0 100 200 300 400 500 2 0 0 100 200 dIF/dt(A/ µs) 300 400 500 600 700 800 Fig. 11: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C] 1.25 1.00 0.75 0.50 Qrr IRM 0.25 Tj(°C) 0.00 0 25 50 75 100 125 150 4/5 BYT200PIV-400 PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S n Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 typ. 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5