BYT230Y-400

® BYT230Y-400 FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHHET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING 2 x 30 A 400 V 150 °C 1.3 V A1 K A2 A2 K A1 Max247 DESCRIPTION Dual 400V rectifiers suited for Switch Mode Power Supplies and other converters. Packaged in Max247, this device is also intended for use in welding equipment and telecom power supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current Tc = 105°C δ = 0.5 Per diode Per device tp=5 µs F=5kHz Value 400 380 50 30 60 300 - 55 to + 150 150 A °C °C Unit V A A A IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms Sinusoidal October 1999 - Ed: 3A 1/5 BYT230Y-400 THERMAL RESISTANCES Symbol Rth (j-c) Rth(c) Parameter Junction to case Per diode Total Coupling Value 0.95 0.55 0.15 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% Min. Typ. 3 VR = VRRM IF = 30 A IF = 30 A IF = 60 A IF = 60 A 1.1 0.9 Max. 35 12 1.5 1.3 1.7 1.6 Unit µA mA V To evaluate the conduction losses use the following equation: P = 1.0 x IF(AV) + 0.01 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C IF = 0.5A IR = 1A Irr = 0.25A IF = 1A VR = 30V dIF/dt = - 15A/µs Min. Typ. Max. 50 100 Unit ns TURN-OFF SWITCHING CHARACTERISTICS (without serie inductance) Symbol tIRM IRM Test Conditions dIF/dt = - 120A/µs dIF/dt = - 240A/µs dIF/dt = - 120A/µs dIF/dt = - 240A/µs VCC = 200 V IF = 30A Lp = 0.05µH Tj = 100 °C Min. Typ. 50 9 12 A Max. 75 Unit ns TURN-OFF OVERVOLTAGE CORFFICIENT (with serie inductance) Symbol C= VRP VCC Test Conditions Tj = 100 °C VCC = 60V IF = IF (AV) dIF/dt = - 30A/µs Lp = 1µH Min. Typ. 3.3 Max. Unit / 2/5 BYT230Y-400 Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 60 δ = 0.1 δ = 0.2 δ = 0.5 δ=1 Fig. 2: Peak current versus form factor (per diode). IM(A) P=40W 250 200 T 50 40 30 20 10 δ = 0.05 δ=tp/T tp 150 P=60W 100 50 0 0.0 P=20W P=80W T IF(av) (A) 0 0 5 10 15 20 25 30 δ=tp/T tp 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 35 40 Fig. 3: Average forward current versus ambient temperature(δ=0.5, perdiode). 35 30 25 20 15 10 5 0 0 δ=tp/T T Rth(j-a)=5°C/W Fig. 4: Non repetitive surge peak forward current versus overloadduration( per diode). IM(A) IF(av)(A) 250 Rth(j-a)=Rth(j-c) 200 150 Tc=50°C 100 Tc=75°C 50 tp IM t Tc=110°C δ=0.5 Tamb(°C) 50 75 100 125 150 25 0 1E-3 t(s) 1E-2 1E-1 1E+0 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode). K=[Zth(j-c)/Rth(j-c)] 1.0 δ = 0.5 Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 200.0 100.0 Typical values Tj=125°C δ = 0.2 δ = 0.1 10.0 Tj=125°C Tj=25°C T Single pulse 1.0 tp tp(s) 0.1 1E-3 1E-2 1E-1 δ=tp/T 1E+0 0.1 0.0 VFM(V) 0.5 1.0 1.5 2.0 2.5 3/5 BYT230Y-400 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) F=1MHz Tj=25°C Fig. 8: Recoverycharges versus dIF/dt (per diode). 100 1000 Qrr(nC) IF=IF(av) 90% confidence Tj=100°C 50 100 20 VR(V) 10 1 10 100 200 dIF/dt(A/µs) 20 50 100 200 500 10 10 Fig. 9: Recovery current versus dIF/dt (per diode). Fig. 10: Transient peak forward versus dIF/dt (per diode). VFP(V) IF=IF(av) 90% confidence Tj=100°C IRM(A) 50 IF=IF(av) 90% confidence Tj=100°C 30 25 20 10 15 10 5 1 10 dIF/dt(A/µs) 20 50 100 200 500 0 dIF/dt(A/µs) 0 100 200 300 400 500 Fig. 11: Forward recovery time versus dIF/dt (per diode). tfr(µs) 1.50 1.25 1.00 0.75 IF=IF(av) 90% confidence Tj=100°C Fig. 12: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C] 1.50 1.25 1.00 0.75 IRM 0.50 0.25 0.00 0 100 0.50 dIF/dt(A/µs) Qrr 200 300 400 500 0.25 Tj(°C) 0 25 50 75 100 125 150 4/5 BYT230Y-400 PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. Millimeters Min. E A Inches Min. 0.185 0.087 0.038 0.079 0.118 0.016 0.776 0.211 0.602 0.559 0.146 Max. 0.209 0.102 0.055 0.094 0.133 0.031 0.799 0.219 0.626 0.598 0.169 Max. 5.30 2.60 1.40 2.40 3.40 0.80 10.30 5.55 15.90 15.20 4.30 A A1 b D 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 b1 b2 c L1 A1 D e b1 b2 e b c L E L L1 Ordering type BYT230Y-400 Marking BYT230Y-400 Package Max247 Weight 5 g. Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5