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BYT231PIV-1000

BYT231PIV-1000

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BYT231PIV-1000 - FAST RECOVERY RECTIFIER DIODES - STMicroelectronics

  • 数据手册
  • 价格&库存
BYT231PIV-1000 数据手册
® BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance< 5 nH DESCRIPTION Dual high voltage rectifier devices are suited for free-wheeling function in converters and motor control circuits. Packaged in ISOTOP, they are intended for use in Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature 2 x 30 A 1000 V 1.8 V 80 ns K2 A2 A2 K1 K1 A1 K2 A1 BYT231PIV-1000 BYT230PIV-1000 ISOTOPTM (Plastic) Value 1000 tp=5 µs F=1kHz 700 50 Tc = 55°C δ = 0.5 tp = 10 ms Sinusoidal 30 Unit V A A A IFSM Tstg Tj 200 - 40 to + 150 150 A °C °C TM: ISOTOP is a registered trademark of STMicroelectronics. October 1999 - Ed: 3B 1/5 BYT230PIV-1000 / BYT231PIV-1000 THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Parameter Junction to case Per diode Total Coupling Value 1.5 0.8 0.1 Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Test Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C VR = VRRM IF = 30 A Min. Typ. Max. 1.9 1.8 100 5 µA mA Unit V Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.47 x IF(AV) + 0.010 IF2(RMS) RECOVERY CHARACTERISTICS (per diode) Symbol trr Test Conditions Tj = 25°C IF = 1A VR = 30V dIF/dt = - 15A/µs IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS (per diode) Symbol tIRM IRM Parameter Ma ximu m rev erse reco ve ry time Ma ximu m rev erse reco ve ry current Turn-off overvoltage coefficient Test Conditions VCC = 200 V IF = 30 A dIF/dt = - 240 A/µs Lp ≤ 0.05 µH dIF/dt = - 120 A/µs Tj = 100 °C dIF/dt = - 240 A/µs (see fig. 11) Tj = 100 °C VCC = 200V IF = IF(AV) dIF/dt = - 30A/µs Lp = 5µH (see fig. 12) dIF/dt = - 120 A/µs Min. Typ. Max. Unit 200 ns 120 19.5 22 4.5 / A Min. Typ. Max. 165 80 Unit ns C= VRP VCC 2/5 BYT230PIV-1000 / BYT231PIV-1000 Fig. 1: Low frequency power losses versus average current. P F(av)(W) =0.1 =0.05 =0.2 =0.5 =1 Fig. 2: Peak current versus form factor. 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0 T I F(av)(A) =tp/T tp 5 10 15 20 25 30 35 Fig. 3: Non repetitive peak surge current versus overload duration. Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 5: Voltage drop versus forward current. Fig. 6: Recovery charge versus diF/dt. 3/5 BYT230PIV-1000 / BYT231PIV-1000 Fig. 7: Recovery time versus dIF/dt. Fig. 8: Peak reverse current versus dIF/dt. Fig. 9: Peak forward voltage versus dIF/dt. Fig. 10: Dynamic parameters versus junction temperature. Fig. 11: Turn-off switching characteristics (without serie inductance). Fig. 12: Turn-off switching characteristics (with serie inductance). IF DUT LC VC C VF diF/d t LC LP IF DUT d iF /dt VCC VF VCC IR M VCC tIR M VRP 4/5 BYT230PIV-1000 / BYT231PIV-1000 PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Ordering type Marking Package ISOTOP ISOTOP Weight 28 g. (without screws) 28 g. (without screws) Base qty 10 10 Delivery mode Tube Tube BYT230PIV-1000 BYT230PIV-1000 BYT231PIV-1000 BYT231PIV-1000 Cooling method: by conduction (C) Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5
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