BYT260PIV-400

® BYT60P-400 BYT260PIV-400 / BYT261PIV-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS n K2 A2 A2 K1 2 x 60 A 400 V 1.4 V 50 ns K1 A1 K2 A1 BYT261PIV-400 BYT260PIV-400 n n n VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance < 5 nH ISOTOPTM (Plastic) DESCRIPTION These rectifier devices are suited for free-wheeling function in converters and motor control circuits. Packaged in ISOTOP or SOD93, they are intended for use in Switch Mode Power Supplies. K A SOD93 (Plastic) ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current δ = 0.5 tp=5 µs F=1kHz ISOTOP SOD93 Tc = 70°C Tc = 80°C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature ISOTOP SOD93 ISOTOP SOD93 600 550 - 40 to + 150 150 °C °C A Value 400 1000 140 100 60 A Unit V A A TM: ISOTOP is a registered trademark of STMicroelectronics. May 2000 - Ed: 4D 1/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case ISOTOP SOD93 Rth(c) Per diode Total Total Coupling Value 0.8 0.45 0.7 0.1 °C/W Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Test Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C VR = VRRM IF = 60 A Min. Typ. Max. 1.5 1.4 60 6 µA mA Unit V Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: 2 P = 1.1 x IF(AV) + 0.0045 IF (RMS) RECOVERY CHARACTERISTICS (per diode) Symbol trr Test Conditions Tj = 25°C IF = 1A VR = 30V dI F/dt = - 15A/µs IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM IRM Parameter M ax i m um rev ers e rec ov ery t im e M ax i m um rev ers e rec ov ery c urrent Turn-off overvoltage coefficient Test Conditions dIF/dt = - 240 A/µs dIF/dt = - 480 A/µs dIF/dt = - 240 A/µs dIF/dt = - 480 A/µs VCC = 200 V IF = 60 A Lp ® 0.05 µH Tj = 100°C (see fig. 13) Min. Typ. Max. Unit 75 ns 50 18 24 3.3 4 / A Min. Typ. Max. 100 50 Unit ns C= VRP VCC Tj = 100°C VCC = 120V IF = IF(AV) dIF/dt = - 60A/µs Lp = 0.8µH (see fig. 14) 2/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 Fig. 1: Average forward power dissipation versus average forward current (per diode, for ISOTOP). Fig. 2: Peak current versus form factor (per diode, for ISOTOP). PF(av)(W) 110 100 90 80 70 60 50 40 30 20 10 0 δ = 0.2 δ = 0.1 δ=1 δ = 0.05 δ = 0.5 IM(A) 350 300 250 200 P=100W P=75W T δ=tp/T tp 150 T 100 50 tp P=50W IF(av) (A) 0 10 20 30 40 50 δ=tp/T P=25W 60 70 80 0 0.0 δ 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 0.2 0.3 Fig. 3: Average forward current versus ambient temperature (δ=0.5, per diode for ISOTOP). IF(av)(A) 70 Rth(j-a)=Rth(j-c) 60 50 40 30 20 10 0 0 δ=tp/T T Rth(j-a)=2.5°C/W ISOTOP SOD93 tp Tamb(°C) 50 75 100 125 150 25 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (SOD93). Fig. 4-2: Non repetitive surge peak forward current versus overload duration (per diode, for ISOTOP). IM(A) 450 400 350 300 250 200 150 100 I M 50 0 1E-3 400 350 300 Tc=50°C Tc=25°C IM(A) Tc=50°C Tc=25°C 250 200 150 Tc=75°C 100 50 Tc=75°C IM t t δ=0.5 t(s) 1E-2 1E-1 1E+0 δ=0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 3/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode for ISOTOP). Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (SOD93). K=[Zth(j-c)/Rth(j-c)] 1.0 1.0 K=[Zth(j-c)/Rth(j-c)] 0.5 δ = 0.5 0.5 δ = 0.5 δ = 0.2 δ = 0.2 δ = 0.1 0.2 δ = 0.1 T 0.2 Single pulse T Single pulse tp(s) 0.1 1E-3 1E-2 1E-1 δ=tp/T tp tp(s) 0.1 1E-3 1E-2 1E-1 δ=tp/T tp 1E+0 1E+0 Fig. 6: Forward voltage drop versus forward current (maximum values, per diode for ISOTOP). Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode for ISOTOP). C(pF) 200 IFM(A) 500 Typical values Tj=100°C 180 160 Tj=25°C F=1MHz Tj=25°C 100 140 120 100 10 Tj=100°C VFM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 80 60 1 VR(V) 10 100 200 Fig. 8: Recovery charges versus dIF/dt (per diode for ISOTOP). Qrr(µC) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10 20 dIF/dt(A/ µs) 50 100 200 500 IF=IF(av) 90% confidence Tj=100°C Fig. 9: Recovery current versus dI F/dt (per diode for ISOTOP). IRM(A) 50 IF=IF(av) 90% confidence Tj=100°C 10 1 10 dIF/dt(A/µs) 20 50 100 200 500 4/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 Fig. 10: Transient peak forward voltage versus dIF/dt (per diode for ISOTOP). VFP(V) 30 25 20 15 10 5 0 dIF/dt(A/µs) 0 100 200 300 400 500 IF=IF(av) 90% confidence Tj=100°C Fig. 11: Forward recovery time versus dIF/dt (per diode for ISOTOP). tfr( µs) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 dIF/dt(A/µs) 0 100 200 300 400 500 IF=IF(av) 90% confidence Tj=100°C Fig. 12: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=100 °C] 1.50 1.25 1.00 0.75 0.50 0.25 0 25 IRM Qrr Tj(°C) 50 75 100 125 150 Fig. 13: Turn-off switching characteristics (without serie inductance). Fig. 14: Turn-off switching characteristics (with serie inductance). IF DUT LC VCC VF di F/ dt IF DUT LC LP di F/dt VCC VF VCC I RM VCC tIRM VRP 5/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P Millimeters Min. 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 24.80 14.90 12.60 3.50 4.10 4.60 4.00 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 typ. 15.10 12.80 4.30 4.30 5.00 4.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 6/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 PACKAGE MECHANICAL DATA SOD93 Plastic DIMENSIONS REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O Millimeters Min. 4.70 1.17 Typ. Max. 4.90 1.37 2.50 1.27 0.78 1.30 1.75 11.10 15.20 12.20 16.20 18.0 4.15 31.00 4.10 Inches Min. Typ. Max. 0.185 0.193 0.046 0.054 0.098 0.050 0.020 0.031 0.043 0.051 0.069 0.425 0.437 0.578 0.598 0.480 0.638 0.709 0.156 0.163 1.220 0.157 0.161 0.50 1.10 10.80 14.70 3.95 4.00 Ordering type BYT60P-400 BYT260PIV-400 BYT261PIV-400 n Marking BYT60P-400 BYT260PIV-400 BYT261PIV-400 Package SOD93 ISOTOP ISOTOP Weight 3.79 g. 28 g. (without screws) 28 g. (without screws) Base qty 30 10 10 Delivery mode Tube Tube Tube n n n n Cooling method: by conduction (C) Recommended torque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Recommended torque value (SOD93): 0.8 N.m. Maximum torque value (SOD93): 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All rights reserved. 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