BYT261PIV-1000

® BYT60P-1000 BYT261PIV-1000 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance< 5 nH DESCRIPTION Dual or high single voltage rectifier devices suited for Switch Mode Power Supplies and other power converters. These devices are packaged in ISOTOP or in SOD93. 2 x 60 A 1000 V 1.8 V 70 ns K2 A2 K1 A1 BYT261PIV-1000 ISOTOPTM (Plastic) A K SOD93 (Plastic) ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current δ = 0.5 tp=5 µs F=1kHz ISOTOP SOD93 Tc = 50°C ISOTOP Value 1000 1000 140 100 60 60 400 - 40 to + 150 150 A °C °C A Unit V A A Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 60°C SOD93 tp = 10 ms Sinusoidal TM: ISOTOP is a registered trademark of STMicroelectronics. October 1999 - Ed: 4B 1/7 BYT60P-1000 / BYT261PIV-1000 THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case ISOTOP SOD93 Rth(c) Per diode Total Total Coupling Value 0.8 0.45 0.7 0.1 °C/W Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Test Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C VR = VRRM IF = 60 A Min. Typ. Max. 1.9 1.8 100 6 µA mA Unit V Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.47 x IF(AV) + 0.005 IF2(RMS) RECOVERY CHARACTERISTICS (per diode) Symbol trr Test Conditions Tj = 25°C IF = 1A VR = 30V dIF/dt = - 15A/µs IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 170 70 Unit ns TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM IRM Parameter Ma ximu m rev erse reco ve ry time Ma ximu m rev erse reco ve ry current Turn-off overvoltage coefficient Test Conditions dIF/dt = - 240 A/µs dIF/dt = - 480 A/µs dIF/dt = - 240 A/µs dIF/dt = - 480 A/µs VCC = 200 V IF = 60 A Lp ≤ 0.05 µH Tj = 100 °C (see fig. 13) Min. Typ. Max. Unit 200 ns 120 40 44 3.3 4.5 / A C= VRP VCC Tj = 100 °C VCC = 200V IF = IF(AV) dIF/dt = - 60A/µs Lp = 2.5µH (see fig. 14) 2/7 BYT60P-1000 / BYT261PIV-1000 Fig. 1-1: Average forward power dissipation versus average forward current (per diode, ISOTOP). PF(av)(W) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 δ = 0.1 δ = 0.05 δ=1 δ = 0.2 δ = 0.5 Fig. 1-2: Average forward power dissipation versus average forward current (SOD93). PF(av)(W) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.05 δ=1 T T IF(av) (A) 0 10 20 30 40 50 δ=tp/T tp IF(av) (A) 0 10 20 30 40 50 δ=tp/T tp 60 70 60 70 Fig. 2-1: Peak current versus form factor (per diode, ISOTOP). Fig. 2-2: Peak current versus form factor (SOD93). IM(A) 500 450 400 350 300 250 200 150 100 50 0 0.0 T IM(A) 500 450 400 350 300 250 200 150 100 50 0 0.0 T P=70W P=70W δ=tp/T tp δ=tp/T P=40W P=100W tp P=40W P=100W P=20W P=20W 0.1 δ 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 δ 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Average forward current versus ambient temperature (δ=0.5, per diode for ISOTOP). IF(av)(A) 70 Rth(j-a)=Rth(j-c) 60 SOD93 50 40 30 20 10 0 0 δ=tp/T T ISOTOP Rth(j-a)=2.5°C/W tp Tamb( °C) 50 75 100 125 150 25 3/7 BYT60P-1000 / BYT261PIV-1000 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (SOD93). Fig. 4-2: Non repetitive surge peak forward current versus overload duration (per diode, ISOTOP). IM(A) 400 350 300 250 200 150 100 50 0 1E-3 IM t IM(A) 400 350 300 250 Tc=25°C 200 150 100 50 Tc=25°C Tc=60°C IM t Tc=50°C δ=0.5 t(s) 1E-2 1E-1 1E+0 δ=0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode, ISOTOP). Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (SOD93). K=[Zth(j-c)/Rth(j-c)] 1.0 1.0 K=[Zth(j-c)/Rth(j-c)] 0.5 δ = 0.5 0.5 δ = 0.5 δ = 0.2 δ = 0.2 δ = 0.1 0.2 δ = 0.1 T 0.2 Single pulse T Single pulse tp(s) 1E-2 1E-1 δ=tp/T tp tp(s) 0.1 1E-3 1E-2 1E-1 δ=tp/T tp 0.1 1E-3 1E+0 1E+0 Fig. 6: Forward voltage drop versus forward current (maximum values, per diode for ISOTOP). Fig. 7: Junctioncapacitance versus reverse voltage applied(typical values, per diode for ISOTOP). IFM(A) 500 Typical values Tj=100°C C(pF) 100 F=1MHz Tj=25°C 100 Tj=25°C 80 60 40 20 10 Tj=100°C 1 0.0 VFM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VR(V) 0 1 10 100 200 4/7 BYT60P-1000 / BYT261PIV-1000 Fig. 8: Recovery charges versus dIF/dt (per diode for ISOTOP). Fig. 9: Recovery current versus dIF/dt (per diode for ISOTOP). Qrr(µC) 10 8 6 4 2 dIF/dt(A/ µs) 0 10 20 50 100 200 500 IF=IF(av) 90% confidence Tj=100°C IRM(A) 80 70 60 50 40 30 20 10 0 10 20 dIF/dt(A/ µs) 50 100 200 500 IF=IF(av) 90% confidence Tj=100°C Fig. 10: Transient peak forward voltage versus dIF/dt (per diode for ISOTOP). Fig. 11: Forward recovery time versus dIF/dt (per diode for ISOTOP). VFP(V) 45 40 35 30 25 20 15 10 5 0 IF=IF(av) 90% confidence Tj=100°C tfr( µs) 1.50 1.25 1.00 0.75 0.50 dIF/dt(A/ µs) 0.25 400 500 0.00 0 100 dIF/dt(A/ µs) 200 300 400 500 IF=IF(av) 90% confidence Tj=100°C 0 100 200 300 Fig. 12: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=100 °C] 1.50 1.25 1.00 0.75 0.50 0.25 0 25 IRM Qrr Tj(°C) 50 75 100 125 150 5/7 BYT60P-1000 / BYT261PIV-1000 Fig. 13: Turn-off switching characteristics (without serie inductance). Fig. 14: Turn-off switching characteristics (with serie inductance). IF DUT LC VCC VF diF/dt IF DUT LC LP diF/dt VCC VF VCC I RM VCC tI RM VRP PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 6/7 BYT60P-1000 / BYT261PIV-1000 PACKAGE MECHANICAL DATA SOD93 Plastic DIMENSIONS Millimeters Inches Min. Typ. Max. Min. 4.70 4.90 0.185 1.17 1.37 0.046 2.50 1.27 0.50 0.78 0.020 1.10 1.30 0.043 1.75 10.80 11.10 0.425 14.70 15.20 0.578 12.20 16.20 18.0 3.95 4.15 0.156 31.00 4.00 4.10 0.157 Typ. Max. 0.193 0.054 0.098 0.050 0.031 0.051 0.069 0.437 0.598 0.480 0.638 0.709 0.163 1.220 0.161 REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O Ordering type BYT60P-1000 Marking BYT60P-1000 Package SOD93 ISOTOP Weight 3.79 g. 28 g. (without screws) Base qty 30 10 Delivery mode Tube Tube BYT261PIV-1000 BYT261PIV-1000 Cooling method: by conduction (C) Recommended torque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Recommended torque value (SOD93): 0.8 N.m. Maximum torque value (SOD93): 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7