BYT71-800

BYT71-800 ® FAST RECOVERY RECTIFIER DIODES Table 1: Main Product Characteristics IF(AV) 6A VRRM 800 V Tj 150°C VF (max) 1.4 V trr (max) 300 ns ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O A K TO-220AC FEATURES AND BENEFITS ■ ■ Table 2: Order Code High voltage capability Fast and soft recovery Part Number Marking BYT71-800 BYT71800 DESCRIPTION Single chip rectifier suited for power conversion and polarity protection applications. This device is packaged in TO-220AC. Table 3: Absolute Maximum Ratings Symbol VRRM IF(RMS) Parameter Value Unit Repetitive peak reverse voltage 800 V RMS forward voltage 12 A Tc = 130°C 6 A tp = 10ms sinusoidal 90 A -65 to + 150 °C 150 °C δ = 0.5 IF(AV) Average forward current IFSM Surge non repetitive forward current Tstg Storage temperature range Tj April 2005 Maximum operating junction temperature REV. 1 1/6 BYT71-800 Table 4: Thermal Resistance Symbol Rth(j-c) Parameter Value (max). Unit 2.3 °C/W Junction to case Table 5: Static Electrical Characteristics Symbol Parameter Test conditions IR * Reverse leakage current Tj = 25°C Tj = 100°C Min. Typ VR = VRRM Max. Unit 20 µA 1 mA ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O VF ** Pulse test: Forward voltage drop Tj = 25°C Tj = 100°C 1.4 IF = 6A * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% V 1.3 2 To evaluate the conduction losses use the following equation: P = 1.15 x IF(AV) + 0.025 IF (RMS) Table 6: Recovery Characteristics Symbol Parameter trr Reverse recovery time 2/6 Test conditions Tj = 25°C IF = 1A dIF/dt = -15 A/µs VR =30V Min. Typ Max. Unit 300 ns BYT71-800 Figure 1: Average forward power dissipation versus average forward current Figure 2: Average current versus ambient temperature (δ = 0.5) IF(AV)(A) PF(AV)(W) 8 10 δ = 0.2 9 δ = 0.5 7 Rth(j-a)=Rth(j-c) δ = 0.1 8 6 δ = 0.05 7 δ=1 5 6 Rth(j-a)=15°C/W 5 4 4 3 3 2 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O T 2 1 0 IF(AV)(A) 0 1 3 2 δ=tp/T 5 4 T 1 6 δ=tp/T tp 0 8 7 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 0 Tamb(°C) tp 25 50 75 100 125 150 Figure 4: Peak current versus form factor IM(A) Zth(j-c)/Rth(j-c) 50 1 T 45 40 δ = 0.5 P = 7.5W δ=tp/T 35 0.5 tp 30 δ = 0.2 P = 10W 25 δ = 0.1 20 15 0.2 T Single pulse 5 tp(s) 0.1 0.001 P = 5W 10 δ=tp/T 0.01 0.1 tp δ 0 1 Figure 5: Peak reverse current versus dIF/dt (90% confidence) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Figure 6: Forward voltage drop versus forward current (maximum values) VFM(V) IRM(A) 50 5.0 Tj=100°C Tj=100°C 4.5 IF=IF(AV) 4.0 3.5 3.0 10 2.5 2.0 1.5 1.0 0.5 dIF/dt(A/µs) IFM(A) 0 1 10 20 50 100 200 500 0.1 1 10 100 200 3/6 BYT71-800 Figure 7: Recovery charges versus dIF/dt (90% condidence) Figure 8: Peak forward voltage versus dIF/dt (90% confidence Qrr(µC) VFP(V) 10 40 Tj=100°C Tj=100°C 35 30 5 25 IF=IF(AV) 20 IF=IF(AV) 15 2 10 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 5 dIF/dt(A/µs) 1 dIF/dt(A/µs) 0 10 20 50 100 200 0 500 Figure 9: Recovery time versus dIF/dt (90% confidence) 10 20 30 40 50 60 70 80 90 100 Figure 10: Junction capacitance versus reverse voltage applied (typical values) tfr(µs) C(pF) 2.00 100 Tj=100°C F=1MHz VOSC=30mVRMS Tj=25°C 1.75 IF=IF(AV) 1.50 1.25 10 1.00 0.75 0.50 0.25 VR(V) dIF/dt(A/µs) 1 0.00 0 10 20 30 40 50 Figure 11: Dynamic junction temperature 60 70 80 parameters 90 100 versus Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C) 1.50 1.25 1.00 IRM 0.75 Qrr 0.50 0.25 Tj(°C) 0.00 0 4/6 25 50 75 100 125 150 1 10 100 1000 BYT71-800 Figure 12: TO-220AC Package Mechanical Data REF. A H2 ØI C L5 L7 L6 L2 A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 10.00 10.40 0.393 0.409 16.40 typ. 0.645 typ. 13.00 14.00 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O F1 D L9 L4 F M E G Table 7: Ordering Information ■ ■ ■ ■ Ordering type Marking Package Weight Base qty Delivery mode BYW71-800 BYW71800 TO-220AC 1.90 g 50 Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 m.N. (TO-220AC) Maximum torque value: 0.70 m.N. (TO-220AC) Table 8: Revision History Date Revision 16-Apr-2005 1 Description of Changes First issue. 5/6 BYT71-800 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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