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BYT71F-800

BYT71F-800

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BYT71F-800 - FAST RECOVERY RECTIFIER DIODES - STMicroelectronics

  • 数据手册
  • 价格&库存
BYT71F-800 数据手册
® B YT71(F)-800 FAST RECOVERY RECTIFIER DIODES . . . FEATURES HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY INSULATED PACKAGE : insulating voltage = 2000VDC capacitance = 12 pF K A K A DESCRIPTION Single chip rectifier suited for power conversion and polarity protection applications. This device is packaged in TO220AC and in ISOWATT220AC. TO220AC (Plastic) ISOWATT220AC (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS on-state current Average forward current δ = 0.5 TO220AC ISOWATT220AC Tc=130°C Tc=105°C tp=10ms sinusoidal Parameter Value 12 6 6 90 - 65 to + 150 - 65 to + 150 A °C °C Unit A A IFSM Tstg Tj Surge non repetitive forward current Storage and junction temperature range Symbol Parameter BYT71-(F) 600 800 800 Unit VRRM Repetitive peak off-state voltage 600 V August 1998 Ed : 3A 1/7 BYT71(F)-800 THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO220AC ISOWATT220AC Value 2.3 4.9 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR ** Tj = 25°C Tj = 100°C VF * Tj = 100°C IF = 6 A Test Conditions VR = VRRM Min. Typ. Max. 20 1 1.3 1.4 Unit µA mA V Tj = 25°C IF = 6 A Pulse test : * tp = 380 µs, duty cycle < 2 % ** tp = 5 ms, duty cycle < 2 % RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 1A VR = 30V dIF/dt = -15A/µs Min. Typ. Max. 300 Unit ns To evaluate the conduction losses use the following equations : P = 1.15 x IF(AV) + 0.025 x IF2 (RMS) 2/7 BYT71(F)-800 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.2 =0.1 =0.05 P=7.5W P=10W =tp/T tp IM Fig.2 : Peak current versus form factor. I M(A) =0.5 =1 T T P=5W IF(av)(A) =tp/T tp Fig.3 : Forward voltage drop versus forward current (maximum values). V FM(V) Tj=100 O C I FM(A) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. (TO 220 AC) Fig.5 : Relative variation of thermal impedance junction to case versus pulse duration. (ISOWAT T220AC) K=Zth(j-c)/Rth(j-c) =0.5 K=Zth(j-c)/Rth(j-c) =0.5 =0.2 =0.2 =0.1 T T =0.1 SINGLE PULSE =tp/T tp SINGLE PULSE tp(s) =tp/T tp 3/7 BYT71(F)-800 Fig.6 : Non repetitive surge peak forward current versus overload duration. (TO 220 AB) Fig.7 : Non repetitive surge peak forward current versus overload duration. (ISOWAT T220AB) I M(A) IM IM =0.5 =0.5 t(s) t(s) Fig.8 : Average current versus ambient temperature. (duty cycle : 0.5) (TO 220 AB) IF(av)(A) Fig.9 : Average current versus ambient temperature. (duty cycle : 0.5) (ISOWATT220AB) I F(av)(A ) 8 7 6 5 4 3 2 1 0 0 8 7 Rth(j-a)=Rth(j-c) Rth(j-a)=Rth(j-c) 6 5 =0.5 Rth(j-a)=15 o C/W T Rth(j-a)=15 oC/W =0.5 T 4 3 2 =tp/T tp Tamb( oC) 1 150 0 0 =tp/T tp Tamb(oC) 25 50 75 100 125 25 50 75 100 125 150 Fig.10 : Junction capacitance versus reverse voltage applied (Typical values). Fig.11 : Recovery charges versus dIF/dt. C(pF) F=1Mhz Tj=25 O C 90% CONFIDENCE Tj=100 C V R(V) 4/7 BYT71(F)-800 Fig.12 : Peak reverse current versus dIF/dt. Fig.13 : Dynamic temperature. parameters versus junction I RM(A) 90% CONFIDENCE Tj=100 oC QRR;IRM[Tj]/QRR;IRM[Tj=100 oC ] IF=IF(av) dIF/dt(A/us) Tj(oC) Fig.14 : Peak forward voltage versus dIF/dt. Fig.15 : Recovery time versus dIF/dt. 40 35 30 25 20 15 10 5 V FP(V) 90% CONFIDENCE Tj=100 o C 2.00 1.75 IF=IF(av) t fr(us) 90% CONFIDENCE Tj=100 o C 1.50 1.25 1.00 0.75 0.50 IF=IF(av) 0 0 dIF/dt(A/us) 10 20 30 40 50 60 70 80 90 100 0.25 0.00 0 10 20 30 dIF/dt(A/us) 40 50 60 70 80 90 100 5/7 BYT71(F)-800 PACKAGE MECHANICAL DATA TO220 AC Plastic DIMENSIONS Millimeters Inches A Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 L7 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 D H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 M L6 15.25 15.75 0.600 0.620 E L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Diam. I 3.75 3.85 0.147 0.151 REF. H2 C L5 ØI L6 L2 A K L9 F1 L4 F G . . . . . Marking : Type number Cooling method : C Weight : 1.86 g Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N 6/7 BYT71(F)-800 PACKAGE MECHANICAL DATA ISOWATT220AC Plastic A H B L6 L2 L3 L7 F1 F G D E DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.40 2.75 0.094 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 H 10.00 10.40 0.394 0.409 L2 16.00 0.630 L3 28.60 30.60 1.125 1.205 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 REF. . . . . . Marking : Type number Cooling method : C Weight : 2 g Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. Diam 7/7
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