BYV10-60

® BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. DO 41 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Parameter Repetitive Peak Reverse Voltage Average Forward Current* Surge non Repetitive Forward Current Tamb = 25 °C Tamb = 25°C tp = 10ms Tamb = 25°C tp = 300µs Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Value 60 1 20 Sinusoidal Pulse 40 Rectangular Pulse - 65 to + 150 - 65 to + 125 230 °C °C °C Unit V A A THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 110 Unit °C/W * On infinite heatsink with 4mm lead length August 1999 Ed: 1A 1/4 BYV 10-60 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF * IF = 1A IF = 3A Tj = 25°C Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 0.7 1 V Unit mA DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF Forward current flow in a schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charge the depletion capacitance of the diode. Figure 1. Forward current versus forward voltage at low level (typical values). This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit behaviour analysis may be performed assuming that schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). Figure 2. Forward current versus forward voltage at high level (typical values). 2/4 BYV 10-60 Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus VRRM in per cent. Figure 5. Capacitance C versus reverse applied voltage VR (typical values). Figure 6. Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms. 3/4 BYV 10-60 Figure 7. Surge non repetitive forward current versus number of cycles. PACKAGE MECHANICAL DATA DO 41 Glass DIMENSIONS B note 1 E A B E note 1 / OC REF. Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 A B / OD note 2 4.07 2.04 28 0.712 C OD / D 0.863 0.028 0.034 Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.34g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4