BYW100-200RL

BYW100-200 ® HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times The specifications and curves enable the determination of trr and IRM at 100°C under users conditions. ■ ■ ■ DO-15 BYW100-200 ■ DESCRIPTION Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Value 200 Unit V Repetitive peak reverse voltage IFRM Repetitive peak forward current * tp = 5µs F = 1KHz 80 A IF(AV) Average forward current* Ta = 95°C δ = 0.5 1.5 A IFSM Surge non repetitive forward current tp=10 ms Sinusoidal 50 A Tstg Storage temperature range -65 +150 °C + 150 °C 230 °C Tj Maximum operating junction temperature TL Maximum lead temperature for soldering during 10s at 4mm from case * On infinitive heatsink with 10mm lead length October 2001 - Ed: 4B 1/5 BYW100-200 THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient* Value Unit 45 °C/W * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions IR * Reverse leakage current Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Forward voltage drop Tj = 25°C IF = 4.5A Tj = 100°C IF = 1.5A 0.78 Max. Unit 10 µA 0.5 mA 1.2 V 0.85 Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol 2/5 Tests conditions Min. Typ. Max. Unit 35 ns trr IF = 1A dIF/dt = - 50A/µs VR = 30V Tj = 25°C tfr IF = 1.5A dIF/dt = - 50A/µs Measured at 1.1 x VFmax Tj = 25°C 30 ns VFP IF = 1.5A dIF/dt = - 50A/µs Tj = 25°C 5 V Qrr IF = 1.5A dIF/dt = - 20A/µs VR ≤ 30V Tj = 25°C 10 nC BYW100-200 Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 1.6 δ = 0.05 δ = 0.1 δ = 0.2 δ=1 δ = 0.5 1.4 1.2 1.0 0.8 0.6 T 0.4 0.2 0.0 0.0 δ=tp/T IF(av) (A) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 tp 1.6 1.8 Fig. 2: Average forward current versus ambient temperature (δ=0.5). 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF(av)(A) Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W Tamb(°C) 0 50 75 100 125 150 Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu) = 35µm). Fig. 3: Thermal resistance versus lead length. Rth(°C/W) 110 100 90 80 70 60 50 40 30 20 10 0 25 Zth(j-a)/Rth(j-a) 1.00 Rth(j-a) δ = 0.5 δ = 0.2 Rth(j-l) 0.10 δ = 0.1 Single pulse Lleads(mm) 5 10 15 20 25 Fig. 5: Forward voltage drop versus forward current (maximum values). 50.00 0.01 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) 20 C(pF) F=1MHz Tj=25°C Tj=100°C (Typical values) 10 10.00 Tj=25°C 5 Tj=100°C 1.00 2 VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 VR(V) 1 1 10 100 200 3/5 BYW100-200 Fig. 7: Reverse recovery time versus dIF/dt. 150 Fig. 8: Peak reverse recovery current versus dIF/dt. trr(ns) 2.5 IF=1.5A VR=30V 90% confidence Tj=100°C IRM(A) IF=1.5A VR=30V 90% confidence 2.0 100 1.5 Tj=100°C Tj=25°C 1.0 50 Tj=25°C 0.5 0 dIF/dt(A/µs) 1 10 100 Fig. 9: Dynamic parameters versus junction temperature. 250 % Qrr 200 IRM 150 100 25 4/5 trr 50 75 Tj(°C) 100 125 0.0 dIF/dt(A/µs) 1 10 100 BYW100-200 PACKAGE MECHANICAL DATA DO-15 DIMENSIONS C D ■ ■ REF. C A B Millimeters Inches Min. Max. Min. Max. A 6.05 6.75 0.238 0.266 B 2.95 3.53 0.116 0.139 C 26 31 1.024 1.220 D 0.71 0.88 0.028 0.035 Ordering code Marking Package Weight Base qty Delivery mode BYW100-200 BYW100-200 DO-15 0.4 g 1000 Ammopack BYW100-200RL BYW100-200 DO-15 0.4 g 6000 Tape and reel White band indicates cathode Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5