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BYW29F200

BYW29F200

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BYW29F200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES - STMicroelectronics

  • 数据手册
  • 价格&库存
BYW29F200 数据手册
® BYW29(F) HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A K K A DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC or ISOWATT220AC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. TO-220AC (Plastic) BYW29-200 isolated ISOWATT220AC (Plastic) BYW29F-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Parameter Value 16 Unit A A Average forward current δ = 0.5 TO-220AC ISOWATT220AC Tc=120°C Tc=100°C tp=10ms sinusoidal 8 8 80 - 65 to + 150 - 65 to + 150 IFSM Tstg Tj Surge non repetitive forward current Storage and junction temperature range A °C °C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 - Ed: 2D 1/6 BYW29(F) THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter TO-220AC ISOWATT220AC Value 2.8 5.0 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF ** Tj = 125°C Tj = 125°C Tj = 25°C IF = 5 A IF = 10 A IF = 10 A Test Conditions VR = VRRM Min. Typ. Max. 10 0.6 0.85 1.05 1.15 Unit µA mA V Pulse test :* tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.040 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr Tj = 25°C Tj = 25°C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A Min. Typ. Max. 25 Unit ns dIF/dt = -50A/µs 35 tr = 10 ns 15 ns VFP tr = 10 ns 2 V 2/6 BYW29(F) Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.05 =0.1 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 12 10 8 6 160 140 120 100 80 T IM(A) T IM P=10W =tp/T tp 4 2 IF(av)(A) =tp/T tp 60 40 P=5W P=15W 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0 1 2 3 4 5 6 7 8 9 10 11 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj= 125 oC 0.1 1 10 100 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. (TO-220AC) 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 =0.2 Fig.5 : Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AC) 1 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 0.8 0.5 0.6 = 0 .2 = 0 .1 0.4 T T = 0 .1 Single pulse 0.2 Single pulse 0.2 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 0 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T 1.0 E+00 tp 1. 0E+01 3/6 BYW29(F) Fig.6 : Non repetitive surge peak forward current versus overload duration. (TO-220AC) 80 70 60 50 40 30 20 10 0 0.001 IM t =0.5 Fig.7 : Non repetitive surge peak forward current versus overload duration. (ISOWATT220AC) 60 50 40 Tc=25 o C IM(A) IM(A) Tc=25 oC 30 Tc=50 o C Tc=75 o C Tc=120 o C 20 IM Tc=100 o C t =0.5 10 1 0 0.001 t(s) 0.01 0.1 t(s) 0.01 0.1 1 Fig.8 : Average temperature. (δ: 0.5) (TO-220AC) 10 9 8 7 6 5 4 3 2 1 0 0 IF(av)(A) current versus ambient Fig.9 : Average current temperature. (δ: 0.5) (ISOWATT220AC) 10 9 8 7 6 5 4 3 2 1 0 0 IF(av)(A) versus ambient Rth(j-a)=Rth(j-c) Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W Rth(j-a)=15 o C/W =0.5 T =0.5 T =tp/T tp Tamb( o C) =tp/T tp Tamb( o C) 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Fig.10 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) F=1Mhz Tj=25o C Fig.11 : Recovery charges versus dIF/dt. QRR(nC) 90 %CONFIDENCE Tj-100 O C IF=IF(av) VR(V) dIF/dt(A/us) 4/6 BYW29(F) Fig.12 : Peak reverse current versus dIF/dt. Fig.13 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] IF=IF(av) IRM(A) 90% CONFIDENCE Tj-100 OC IRM QRR dIF/dt(A/us) Tj( o C) PACKAGE MECHANICAL DATA ISOWATT220AC (JEDEC outline) A H B REF. Diam DIMENSIONS Millimeters Inches Min. Max. 4.40 4.60 2.50 2.70 2.40 2.75 0.40 0.70 0.75 1.00 1.15 1.70 4.95 5.20 10.00 10.40 16.00 typ. 28.60 30.60 15.90 16.40 9.00 9.30 3.00 3.20 Min. Max. 0.173 0.181 0.098 0.106 0.094 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.195 0.205 0.394 0.409 0.63 typ. 1.125 1.205 0.626 0.646 0.354 0.366 0.118 0.126 L6 L2 L3 L7 F1 F G D E A B D E F F1 G H L2 L3 L6 L7 Diam Cooling method : C Marking : Type number Weight : 2 g Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N 5/6 BYW29(F) PACKAGE MECHANICAL DATA TO-220AC (JEDEC outline) DIMENSIONS H2 C L5 ØI L6 L2 D L4 L7 A REF. A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 L9 F1 F G M E Cooling method : C Marking : Type number Weight : 1.86 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6
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