BYW29G200

® BYW29G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT SMD A NC 8A 200 V 35 ns 0.85 V A K K D2PAK (Plastic) DESCRIPTION Single rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in a surface mount packageD2PAK, this device is intended for use in high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current (All pins connected) Repetitive peak forward current Storage and junction temperature range Tc=120°C δ = 0.5 tp=10ms sinusoidal tp = 5 µs f = 5 kHz Value 200 16 8 80 75 - 40 to + 150 Unit V A A A A °C October 1999 - Ed: 2 1/5 BYW29G-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case thermal resistance Value 2.8 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Test Conditions VR = VRRM Tj = 25°C Tj = 100°C VF ** Forward voltage drop IF = 5 A IF = 10 A IF = 10 A Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % Min. Typ. Max. 10 0.6 0.85 1.05 1.15 Unit µA mA V Tj = 125°C Tj = 125°C Tj = 25°C To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.040 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Test Conditions T j = 25°C Irr = 0.25 A T j = 25°C dIF/dt = -50A/µs tfr Forward recovery time Peak forward voltage IF = 0.5A I R = 1A IF = 1A VR = 30V 15 V 2 Min. Typ. Max. 25 35 ns Unit ns T j = 25°C IF = 1A dIF/dt = 100A/µs VFR = 1.1 x VF max T j = 25°C IF = 1A dIF/dt = 100A/µs VFP PIN OUT configuration in D2PAK: 2/5 BYW29G-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.05 =0.1 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 12 10 8 6 160 140 120 100 80 T IM(A) T IM P=10W =tp/T tp 4 2 IF(av)(A) =tp/T tp 60 40 P=5W P=15W 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0 1 2 3 4 5 6 7 8 9 10 11 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 =0.2 = 0 .1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj= 125 oC 0.5 T 0.2 Single pulse 0.1 1 10 100 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. IM(A) Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) IF(av)(A) Rth(j-a)=Rth(j-c) 80 70 60 50 40 30 20 10 Tc=25 oC IM t =0.5 Tc=75 o C Tc=120 o C t(s) 0.01 0.1 0 0.001 1 10 9 8 7 6 5 4 3 2 1 0 0 Rth(j-a)=15 o C/W =0.5 T =tp/T tp Tamb( o C) 20 40 60 80 100 120 140 160 3/5 BYW29G-200 Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) F=1Mhz Tj=25o C Fig.8 : Recovery charges versus dIF/dt. QRR(nC) 90%CONFIDENCE Tj-10 0 O C IF=IF(av) VR(V) dIF/dt(A/us) Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125oC] I RM(A) 90% CONFIDENCE Tj-100 O C IF=IF(av) IRM QRR dIF/dt(A/us) Tj( oC) 4/5 BYW29G-200 PACKAGE MECHANICAL DATA D2PAK (Plastic) REF. A E L2 C2 DIMENSIONS Millimeters Inches Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8° Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0° Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8° 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0° A A1 A2 D L L3 A1 B2 B G A2 C R B B2 C C2 D E G L L2 L3 M R V2 M * V2 * FLAT ZONE NO LESSTHAN 2mm 0.40 typ. 0.016 typ. FOOT PRINT (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5