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BYW51F-200

BYW51F-200

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BYW51F-200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES - STMicroelectronics

  • 数据手册
  • 价格&库存
BYW51F-200 数据手册
® BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 2 x 10 A 200 V 150 °C 0.85 V 25 ns K A1 A2 A1 K A2 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulation voltage = 2000 V DC Capacitance = 12 pF s s s s s TO-220FPAB BYW51FP-200 K K A1 A2 TO-220AB BYW51-200 A2 A1 D2PAK BYW51G-200 A2 A1 K DESCRIPTION Dual center tap rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB, ISOWATT220AB, TO-220FP, D2PAK or I2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Parameter Repetitive peak reverse voltage ISOWATT220AB BYW51F-200 A2 K A1 I2PAK BYW51R-200 Value 200 20 Unit V A A Average forward current TO-220AB / D PAK Tc=120°C Per diode δ = 0.5 I2PAK Per device ISOWATT220AB TO-220FPAB Tc=95°C Tc=85°C Per diode Per device Per diode Per device tp=10ms sinusoidal 2 10 20 10 20 10 20 100 - 65 to + 150 150 IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature A °C °C 1/9 August 2002 - Ed: 3E BYW51/F/G/FP/R-200 THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D2PAK / I2PAK Per diode Total ISOWATT220AB Per diode Total TO-220FPAB Per diode Total Rth (c) Coupling TO-220AB / D2PAK / I2PAK ISOWATT220AB TO-220FPAB When diodes 1 and 2 are used simultaneously : ∆Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Test Conditions Tj = 25°C Tj = 100°C VF ** Forward voltage drop Tj = 125°C Tj = 125°C Tj = 25°C Pulse test :* tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Value 2.5 1.4 5.1 4.05 5.7 4.6 0.25 3.0 3.5 Unit °C/W °C/W Min. Typ. Max. 15 1 Unit µA mA V VR = VRRM IF = 8 A IF = 16 A IF = 16 A 0.85 1.05 1.15 To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.025 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25°C Tj = 25°C IF = 1A VFR = 1.1 x VF max IF = 1A Irr = 0.25A dIF/dt = -50A/µs dIF/dt = -50A/µs dIF/dt = -50A/µs 15 2 Typ. Max. 25 35 ns V Unit ns 2/9 BYW51/F/G/FP/R-200 Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode). PF(av)(W) 14 12 10 8 60 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 IM(A) 120 T 100 δ=1 80 P=10W δ=tp/T tp 6 4 2 0 0 1 2 3 4 5 T P=15W 40 P=5W IF(av) (A) 6 7 8 9 20 δ=tp/T tp 10 11 12 13 0 0.0 δ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3-1: Average forward current versus ambient temperature (δ = 0.5, D2PAK, TO-220AB). Fig. 3-2: Average forward current versus ambient temperature (δ = 0.5, ISOWATT220AB, TO-220FPAB). IF(av)(A) 12 IF(av)(A) 12 Rth(j-a)=Rth(j-c) 10 8 Rth(j-a)=15°C/W 10 8 6 Rth(j-a)=Rth(j-c) ISOWATT220AB TO-220FP 6 4 2 0 δ=tp/T tp T Rth(j-a)=15°C/W 4 T Tamb(°C) 50 75 100 125 150 2 0 δ=tp/T tp Tamb(°C) 50 75 100 125 150 0 25 0 25 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (D2PAK, TO-220AB) Fig. 4-2: Non repetitive surge peak forward current versus overload duration (ISOWATT220AB). IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 80 70 60 Tc=25°C IM(A) 50 40 Tc=25°C Tc=75°C Tc=75°C 30 20 10 IM t Tc=100°C t Tc=100°C δ=0.5 δ=0.5 t(s) 1E-2 1E-1 1E+0 t(s) 1E-2 1E-1 1E+0 0 1E-3 3/9 BYW51/F/G/FP/R-200 Fig. 4-3: Non repetitive surge peak forward current versus overload duration (TO-220FPAB). Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (D2PAK, TO-220AB). IM(A) 80 70 60 50 40 30 20 10 0 1E-3 IM K=[Zth(j-c)/Rth(j-c)] 1.0 δ = 0.5 δ = 0.2 Tc=25°C Tc=75°C δ = 0.1 T Tc=100°C t Single pulse δ=0.5 t(s) 1E-2 1E-1 1E+0 0.1 1E-3 1E-2 t(s) 1E-1 δ=tp/T tp 1E+0 Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AB, TO-220FPAB). Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). K=[Zth(j-c)/Rth(j-c)] 1.0 δ = 0.5 IFM(A) 100.0 Tj=125°C δ = 0.2 δ = 0.1 10.0 Tj=25°C T Single pulse 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t(s) 0.1 1E-2 1E-1 1E+0 δ=tp/T tp 1E+1 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 8: Reverse recovery charges versus dIF/dt (per diode). C(pF) 100 F=1MHz Tj=25°C Qrr(nC) 500 IF=IF(av) 90% confidence Tj=125°C 50 200 100 50 20 20 VR(V) 10 1 10 100 200 10 10 20 dIF/dt(A/µs) 50 100 200 500 4/9 BYW51/F/G/FP/R-200 Fig. 9: Peak reverse recovery current versus dIF/dt (per diode). Fig. 10: Dynamic parameters versus junction temperature. IRM(A) 50 IF=IF(av) 90% confidence Tj=125°C Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C] 1.25 1.00 10 0.75 0.50 IRM Qrr dIF/dt(A/µs) 1 10 20 50 100 200 500 0.25 0 25 50 Tj(°C) 75 100 125 150 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) (D2PAK) . Rth(j-a) (°C/W) 80 70 60 50 40 30 20 10 0 0 5 10 S(Cu) (cm²) 15 20 25 30 35 40 5/9 BYW51/F/G/FP/R-200 PACKAGE MECHANICAL DATA TO-220AB (JEDEC compatible) REF. H2 A C L5 L7 Dia OPTIONAL L6 L2 L9 D F2 F1(x2) L4 M F E G1 G A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.30 4.60 0.169 0.181 1.22 1.32 0.048 0.052 2.40 2.72 0.094 0.107 0.33 0.70 0.013 0.028 0.61 0.93 0.024 0.037 1.14 1.70 0.045 0.067 1.14 1.70 0.045 0.067 4.95 5.15 0.195 0.202 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 Typ. 0.630 Typ. 13.00 14.00 0.512 0.551 2.65 2.95 0.104 0.116 14.80 15.75 0.583 0.620 6.20 6.60 0.244 0.260 3.40 3.94 0.134 0.155 2.60 Typ. 0.102 Typ. 3.75 3.89 0.148 0.153 PACKAGE MECHANICAL DATA I2PAK DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.70 0.93 0.028 0.037 1.14 1.17 0.044 0.046 1.14 1.17 0.044 0.046 0.45 0.60 0.018 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 2.40 2.70 0.094 0.106 10.0 10.4 0.394 0.409 13.1 13.6 0.516 0.535 3.48 3.78 0.137 0.149 1.27 1.40 0.050 0.055 REF. A E L2 c2 D L1 b2 L b1 b e A1 c A A1 b b1 b2 c c2 D e E L L1 L2 6/9 BYW51/F/G/FP/R-200 PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8° 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0° Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0° Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8° A A1 A2 D B B2 C L L3 A1 B2 B G A2 C R C2 D E G L L2 M * L3 V2 M R V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0.016 typ. FOOT PRINT (in millimeters) D2PAK 16.90 10.30 1.30 5.08 3.70 8.90 7/9 BYW51/F/G/FP/R-200 PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters A H B Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 PACKAGE MECHANICAL DATA ISOWATT220AB (JEDEC compatible) DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.50 2.70 0.098 0.106 2.50 2.75 0.098 0.108 0.40 0.70 0.016 0.028 0.75 1.00 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 typ. 0.630 typ. 28.60 30.60 1.125 1.205 9.80 10.60 0.386 0.417 15.90 16.40 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam 8/9 BYW51/F/G/FP/R-200 Ordering code BYW51-200 BYW51F-200 BYW51G-200 BYW51FP-200 BYW51R-200 s s Marking BYW51-200 BYW51F-200 BYW51G-200 BYW51FP-200 BYW51R-200 Package TO220AB ISOWATT220AB D PAK TO-220FPAB I PAK 2 2 Weight 2.2 g. 2.08 g. 1.48 g. 2g 1.49 g Base qty 50 50 50 50 50 Delivery mode Tube Tube Tube Tube Tube s s s Recommended torque value (TO-220AB): 0.8 N.m. Maximum torque value (TO-220AB): 1.0 N.m. Recommended torque value (ISOWATT220AB / TO-220FPAB): 0.55 N.m. Maximum torque value (ISOWATT220AB / TO-220FPAB): 0.70 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9
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