BYW77G-200-TR

BYW77G-200 ® HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF 1&3 25 A 200 V 50 ns 0.85 V 4 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 4 2 FEATURES AND BENEFITS 3 1 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY SMD PACKAGE D2PAK (Plastic) DESCRIPTION Single rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in D2PAK, this surface mount device is intended for use in high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) Parameter Value Unit Repetitive peak reverse voltage 200 V RMS forward current 50 A IF(AV) Average forward current Tc=125°C δ = 0.5 25 A IFSM Surge non repetitive forward current tp=10ms sinusoidal 200 A IFRM Repetitive peak forward current tp = 5µs f = 5 kHz 310 A Tstg Tj Storage and junction temperature range - 40 to + 150 °C October 1999 - Ed:3A 1/5 BYW77G-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit 1 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions IR * Reverse leakage current Max. Unit Tj = 25°C 25 µA Tj = 100°C 2.5 mA IF = 20 A Tj = 125°C 0.85 V IF = 40 A Tj = 125°C 1.00 IF = 40 A Tj = 25°C 1.15 VR = VRRM Min. Typ. ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O VF ** Pulse test : Forward voltage drop * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.0075 IF2(RMS) RECOVERY CHARACTERISTICS Symbol Parameter trr Reverse recovery time tfr VFP Test Conditions Typ. Max. Unit ns Tj = 25°C Irr = 0.25 A IF = 0.5A IR = 1A 35 Tj = 25°C dIF/dt = -50A/µs IF = 1A VR = 30V 50 Forward recovery time Tj = 25°C IF = 1A dIF/dt = 100A/µs VFR = 1.1 x VF max Peak forward voltage Tj = 25°C IF = 1A dIF/dt = 100A/µs PIN OUT configuration in D2PAK: 2/5 Min. ns 10 V 1.5 BYW77G-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 Fig.2 : Peak current versus form factor. I M(A) 500 =0.2 =0.1 =0.5 T =1 =0.05 400 I =tp/T 300 tp 200 T ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O P=30W P=40W 100 I F(av)(A) 5 10 15 =tp/T 20 tp 25 0 0 30 Fig.3 : Forward voltage drop versus forward current (maximum values). 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 VFM(V) K 1.8 1.6 M P=20W Zth(j-c) (tp. K = Rth(j-c) ) Tj=125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 =0.1 0.8 0.6 T 0.2 0.4 0.2 Single pulse IFM(A) 0.0 0.1 1 10 100 300 1.0E-03 Fig.5 : Non repetitive surge peak forward current versus overload duration. 300 =tp/T tp(s) 0.1 1.0E-02 1.0E-01 tp 1.0E+00 Fig.6 : Average current versus ambient temperature. (δ = 0.5) I F(av)(A) IM(A) 30 Rth(j-a)=Rth(j-c) 250 25 200 20 =0.5 T Tc=25 oC 150 15 Tc=75 o C =tp/T 100 50 0 0.001 tp 10 IM Tc=125 o C 5 t =0.5 Rth(j-a)=15 o C/W t(s) 0.01 Tamb( o C) 0.1 1 0 0 20 40 60 80 100 120 140 160 3/5 BYW77G-200 Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). 200 C(pF) Fig.8 : Reverse recovery charges versus dIF/dt. 80 F=1MHz Tj=25 oC 1 90 QRR(nC) 70 1 80 90%CONFIDENCE IF=IF(av) Tj=100 OC 60 1 70 1 60 50 1 50 40 1 40 30 Tj=25 O C ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 1 30 20 1 20 11 0 10 VR(V) 1 00 1 10 1 00 200 Fig.9 : Peak reverse current versus dIF/dt. 3.0 10 1 00 Fig.10 : Dynamic parameters versus junction temperature. IRM(A) QRR;IRM[Tj]/QRR;IRM[Tj=125 oC] 1.50 90%CONFIDENCE 2.5 dIF/dt(A/µs) 0 1 IF=IF(av) 1.25 Tj=100 OC 2.0 1.00 1.5 0.75 1.0 0.50 IRM QRR Tj=25 O C 0.5 0.25 dIF/dt(A/µs) 0.0 1 4/5 20 10 1 00 0.00 0 Tj( oC) 25 50 75 100 125 150 BYW77G-200 PACKAGE MECHANICAL DATA D2PAK (Plastic) REF. A E C2 L2 D L A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0° 8° 0° 8° ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O L3 A1 B2 R C B G A2 2.0 MIN. FLAT ZONE V2 FOOT PRINT (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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