BYW77P-200

® BYW77P/PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 pF A K DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOD93, or DOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. SOD93 (Plastic) BYW77P-200 isolated DOP3I (Plastic) BYW77PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 SOD93 TOP3I Tc=125°C Tc=100°C tp=10ms sinusoidal Parameter Value 50 25 25 500 - 40 to + 150 - 40 to + 150 Unit A A IFSM Tstg Tj Surge non repetitive forward current Storage and junction temperature range A °C °C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 Ed : 2C 1/5 BYW77P/PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter SOD93 DOP3I Value 1.0 1.8 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF ** Tj = 125°C Tj = 125°C Tj = 25°C IF = 20 A IF = 40 A IF = 40 A Test Conditions VR = VRRM Min. Typ. Max. 25 2.5 0.85 1.00 1.15 Unit µA mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.0075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25°C Tj = 25°C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A dIF/dt = -50A/µs tr = 5 ns tr = 5 ns 10 1.5 Min. Typ. Max. 35 50 ns V Unit ns 2/5 BYW77P/PI-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.05 =0.1 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 500 400 I M(A) T IM P=20W 300 T =tp/T tp 200 P=30W 100 I F(av)(A) =tp/T tp P=40W 5 10 15 20 25 30 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 =0.2 = 0 .1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj= 125 oC 0.5 T 0.2 Single pulse 0.1 1 10 100 300 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. (BYW81P) 300 250 200 150 100 IM Fig.6 : Non repetitive surge peak forward current versus overload duration. (BYW81PI) 250 200 IM(A) IM(A) Tc=25 oC Tc=75 o C Tc=125 o C t =0.5 150 Tc=25 oC 100 IM Tc=50 o C t =0.5 50 0 0.001 50 0 0.001 t(s) 0.01 0.1 1 t(s) 0.01 0.1 Tc=100 o C 1 3/5 BYW77P/PI-200 Fig.7 : Average current temperature. (duty cycle : 0.5) (SOD93) 30 25 =0.5 versus ambient Fig.8 : Average current temperature. (duty cycle : 0.5) (DOP3I) 30 IF(av)(A) versus ambient IF(av)(A) Rth(j-a)=Rth(j-c) 25 =0.5 Rth(j-a)=Rth(j-c) 20 15 10 5 0 0 Rth(j-a)=15 o C/W =tp/T T 20 15 tp T 10 5 Rth(j-a)=15 o C/W =tp/T tp Tamb( o C) 20 40 60 80 100 120 140 160 0 0 Tamb( o C) 20 40 60 80 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). Fig.10 : Recovery charges versus dIF/dt. 20 0 1 90 1 80 1 70 1 60 1 50 1 40 1 30 1 20 C(pF) F=1Mhz Tj=25 oC 80 70 60 50 40 30 20 QRR(nC) 90%CONFIDENCE IF=IF(av) Tj=100 OC Tj=25 O C 11 0 1 00 1 VR(V) 10 1 00 2 00 10 0 1 dIF/dt(A/us) 10 100 Fig.11 : Peak reverse current versus dIF/dt. Fig.12 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 4/5 IRM(A) 90%CONFIDENCE 1.50 Tj=100 O C IF=IF(av) 1.25 1.00 IRM 0.75 QRR 0.50 Tj=25 O C 0.25 1 00 0.00 0 25 dIF/dt(A/us) 20 10 Tj( o C) 50 75 100 125 150 BYW77P/PI-200 PACKAGE MECHANICAL DATA DOP3I (isoluted) DIMENSIONS REF. A B C D E F G H K L N P R Millimeters Min. Max. 4.4 4.6 1.45 1.55 14.35 15.60 0.5 0.7 2.7 2.9 15.8 16.5 20.4 21.1 15.1 15.5 3.4 3.65 4.08 4.17 10.8 11.3 1.20 1.40 4.60 typ. Inches Min. Max. 0.173 0.181 0.057 0.061 0.565 0.614 0.020 0.028 0.106 0.114 0.622 0.650 0.815 0.831 0.594 0.610 0.134 0.144 0.161 0.164 0.425 0.444 0.047 0.055 0.181 typ. Cooling method : C Marking : Type number Weight : 4.52 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/5 BYW77P/PI-200 PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.70 4.90 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.50 0.098 D1 1.27 0.050 E 0.50 0.78 0.020 0.031 F 1.10 1.30 0.043 0.051 F3 1.75 0.069 G 10.80 11.10 0.425 0.437 H 14.70 15.20 0.578 0.598 L 12.20 0.480 L2 16.20 0.638 L3 18.0 0.709 L5 3.95 4.15 0.156 0.163 L6 31.00 1.220 O 4.00 4.10 0.157 0.161 Cooling method : C Marking : Type number Weight : 3.79 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/5