BYW77PI-200RG

BYW77P/PI-200 ® HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 pF ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O A K DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOD93, or DOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. SOD93 (Plastic) isolated DOP3I (Plastic) BYW77P-200 BYW77PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) Parameter RMS forward current Average forward current δ = 0.5 A TOP3I Tc=100°C 25 tp=10ms sinusoidal 500 A - 40 to + 150 - 40 to + 150 °C °C Value Unit 200 V Storage and junction temperature range Parameter Repetitive peak reverse voltage Ed : 2C A 25 Tstg Tj October 1999 50 Tc=125°C Surge non repetitive forward current VRRM Unit SOD93 IFSM Symbol Value 1/5 BYW77P/PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit SOD93 1.0 °C/W DOP3I 1.8 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Symbol IR * Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Max. Unit 25 µA 2.5 mA V Tj = 125°C IF = 20 A 0.85 Tj = 125°C IF = 40 A 1.00 Tj = 25°C IF = 40 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.0075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. Unit ns IF = 0.5A IR = 1A Irr = 0.25A 35 IF = 1A VR = 30V dIF/dt = -50A/µs 50 tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 5 ns 10 ns VFP Tj = 25°C IF = 1A tr = 5 ns 1.5 V 2/5 BYW77P/PI-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 Fig.2 : Peak current versus form factor. I M(A) 500 =0.2 =0.1 =0.5 T =1 =0.05 400 I M P=20W =tp/T 300 tp 200 T ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O P=30W I F(av)(A) 5 10 15 =tp/T 20 tp 25 30 Fig.3 : Forward voltage drop versus forward current (maximum values). 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 VFM(V) K 1.8 1.6 P=40W 100 Zth(j-c) (tp. K = Rth(j-c) ) Tj=125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 =0.1 0.8 T 0.6 0.2 Single pulse 0.4 0.2 IFM(A) 0.0 0.1 1 10 100 300 Fig.5 : Non repetitive surge peak forward current versus overload duration. (BYW81P) 300 IM(A) 1.0E-03 1.0E-02 1.0E-01 tp 1.0E+00 Fig.6 : Non repetitive surge peak forward current versus overload duration. (BYW81PI) 250 250 =tp/T tp(s) 0.1 IM(A) 200 200 150 Tc=25 oC 150 Tc=25 oC Tc=75 o C 100 100 IM 50 0 0.001 t =0.5 50 t(s) 0.01 0.1 Tc=50 o C IM Tc=125 o C 1 0 0.001 t =0.5 Tc=100 o C t(s) 0.01 0.1 1 3/5 BYW77P/PI-200 Fig.7 : Average current temperature. (duty cycle : 0.5) (SOD93) versus ambient I F(av)(A) Fig.8 : Average current temperature. (duty cycle : 0.5) (DOP3I) 30 30 versus ambient I F(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=Rth(j-c) 25 25 =0.5 =0.5 T 20 T 20 15 15 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O =tp/T tp 5 =tp/T 10 10 Rth(j-a)=15 o C/W Rth(j-a)=15 o C/W 5 Tamb( o C) 0 0 20 40 60 80 Tamb( o C) 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). 20 0 C(pF) 0 0 F=1Mhz Tj=25 oC 20 60 80 70 1 60 50 1 50 40 1 40 30 1 30 120 140 160 90%CONFIDENCE IF=IF(av) Tj=100 OC 60 1 70 100 QRR(nC) 1 80 Tj=25 O C 20 1 20 11 0 10 VR(V) 1 00 1 10 1 00 200 Fig.11 : Peak reverse current versus dIF/dt. dIF/dt(A/us) 0 1 10 1 00 Fig.12 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125 oC] IRM(A) 1.50 90%CONFIDENCE 2.5 40 Fig.10 : Recovery charges versus dIF/dt. 80 1 90 3.0 tp IF=IF(av) 1.25 Tj=100 OC 2.0 1.00 1.5 0.75 1.0 0.50 IRM QRR Tj=25 O C 0.5 0.25 dIF/dt(A/us) 0.0 1 4/5 20 10 1 00 0.00 0 Tj( oC) 25 50 75 100 125 150 BYW77P/PI-200 PACKAGE MECHANICAL DATA DOP3I (isoluted) DIMENSIONS REF. Millimeters Min. A B C D E F G H K L N P R Max. 4.4 4.6 1.45 1.55 14.35 15.60 0.5 0.7 2.7 2.9 15.8 16.5 20.4 21.1 15.1 15.5 3.4 3.65 4.08 4.17 10.8 11.3 1.20 1.40 4.60 typ. Inches Min. Max. 0.173 0.181 0.057 0.061 0.565 0.614 0.020 0.028 0.106 0.114 0.622 0.650 0.815 0.831 0.594 0.610 0.134 0.144 0.161 0.164 0.425 0.444 0.047 0.055 0.181 typ. ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Cooling method : C Marking : Type number Weight : 4.52 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/5 BYW77P/PI-200 PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.70 4.90 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.50 0.098 D1 1.27 0.050 E 0.50 0.78 0.020 0.031 F 1.10 1.30 0.043 0.051 F3 1.75 0.069 G 10.80 11.10 0.425 0.437 H 14.70 15.20 0.578 0.598 L 12.20 0.480 L2 16.20 0.638 L3 18.0 0.709 L5 3.95 4.15 0.156 0.163 L6 31.00 1.220 O 4.00 4.10 0.157 0.161 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Cooling method : C Marking : Type number Weight : 3.79 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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