BYW80

® BYW80PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 7 pF A K DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in Isolated TO220AC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. isolated TO220AC (Plastic) BYW80PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current δ = 0.5 Surge non repetitive forward current Storage and junction temperature range Tc=110°C tp=10ms sinusoidal Parameter Value 20 10 100 - 65 to + 150 - 65 to + 150 Unit A A A °C °C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 Ed : 2C 1/5 BYW80PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Value 3.5 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * T j = 25°C T j = 100°C VF ** T j = 125°C T j = 125°C T j = 25°C IF = 7 A IF = 15 A IF = 15 A Test Conditions VR = VRRM Min. Typ. Max. 10 1 0.85 1.05 1.15 Unit µA mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.027 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25°C Tj = 25°C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A dIF/dt = -50A/µs tr = 10 ns tr = 10 ns 15 2 Min. Typ. Max. 25 35 ns V Unit ns 2/5 BYW80PI-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.1 =0.05 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 14 12 10 8 6 4 2 200 175 150 125 100 T IM(A) T P=10W =tp/T tp IM 75 50 P=5W P=15W IF(av)(A) =tp/T tp 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0 1 2 3 45 6 7 8 9 10 11 12 13 14 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 =0.2 = 0 .1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj= 125 oC 0.5 T 0.2 Single pulse 0.1 1 10 100 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. Fig.6 : Average current temperature. (duty cycle : 0.5) versus ambient 100 90 80 70 60 50 40 30 20 10 0 IM(A) Tc=25 oC IM t =0.5 Tc=70 o C Tc=110 o C t(s) 0.01 0.1 1 0.001 12 11 10 9 8 7 6 5 4 3 2 1 0 0 IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W =0.5 T =tp/T tp Tamb(o C) 20 40 60 80 100 120 140 160 3/5 BYW80PI-200 Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) Fig.8 : Recovery charges versus dIF/dt. QRR(nC) 90% CONFIDENCE Tj=125 o C IF=IF(av) VR(V) dIF/dt(A/us) Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction temperature. O I RM(A) 90% CONFIDENCE Tj=125 o C QRR;IRM[Tj]/QRR;IRM[Tj=125 C] IF=IF(av) IRM QRR dIF/dt(A/us) Tj( o C) 4/5 BYW80PI-200 PACKAGE MECHANICAL DATA TO220AC (isolated) B I L b2 C DIMENSIONS REF. Millimeters Min. Max. 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 5.58 6.85 4.00 3.00 1.75 Inches Min. 0.560 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.180 0.230 0.140 0.100 0.057 Max. 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.220 0.270 0.157 0.118 0.069 F A a1 l2 a2 b1 c1 e c2 A a1 a2 B b1 b2 C c1 c2 e F I L l2 14.23 12.70 10.20 0.64 1.15 4.48 0.35 2.10 4.58 5.85 3.55 2.54 1.45 Cooling method : C Marking : Type number Weight : 1.86 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5