BYW80F200

® BYW80(F)-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A K K A DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC, or ISOWATT220AC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. TO-220AC (Plastic) BYW80-200 isolated ISOWATT220AC (Plastic) BYW80F-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AC ISOWATT220AC Tc=120°C Tc=95°C tp=10ms sinusoidal Parameter Value 20 10 10 100 - 65 to + 150 - 65 to + 150 Unit A A IFSM Tstg Tj Surge non repetitive forward current Storage and junction temperature range A °C °C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 - Ed: 2D 1/6 BYW80(F)-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter TO-220AC ISOWATT220AC Value 2.5 4.7 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF ** Tj = 125°C Tj = 125°C Tj = 25°C IF = 7 A IF = 15 A IF = 15 A Test Conditions VR = VRRM Min. Typ. Max. 10 1 0.85 1.05 1.15 Unit µA mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.027 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25°C Tj = 25°C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A dIF/dt = -50A/µs tr = 10 ns tr = 10 ns 15 2 Min. Typ. Max. 25 35 ns V Unit ns 2/6 BYW80(F)-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.1 =0.05 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 14 12 10 8 6 4 2 200 175 150 125 100 T IM(A) T P=10W =tp/T tp IM 75 50 P=5W P=15W IF(av)(A) =tp/T tp 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0 1 2 3 45 6 7 8 9 10 11 12 13 14 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj= 125 oC 0.1 1 10 100 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. (TO-220AC) 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 =0.2 Fig.5 : Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AC) 1 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 0.8 0.5 0.6 = 0 .2 = 0 .1 0.4 T T = 0 .1 Single pulse 0.2 Single pulse 0.2 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 0 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T 1.0 E+00 tp 1. 0E+01 3/6 BYW80(F)-200 Fig.6 : Non repetitive surge peak forward current versus overload duration. (TO-220AC) IM(A) Fig.7 : Non repetitive surge peak forward current versus overload duration. (ISOWATT220AC) 80 70 60 IM(A) 100 90 80 70 60 50 40 30 IM 20 10 0 0.001 Tc=25 o C Tc= 75 o C Tc=120 o C t =0.5 50 40 30 20 10 IM t =0.5 Tc=25 o C Tc=50 oC Tc= 95 o C t(s) 0.01 0.1 1 t(s) 0.1 1 10 0 0 .001 0.01 Fig.8 : Average current temperature. (duty cycle : 0.5) (TO-220AC) versus ambient Fig.9 : Average current versus temperature. (duty cycle : 0.5) (ISOWATT220AC) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 IF(av)(A) ambient IF(av)(A) 12 11 Rth(j-a)=Rth(j-c) 10 9 8 Rth(j-a)=15 o C/W 7 6 =0.5 5 T 4 3 2 =tp/T tp 1 Tamb(o C) 0 0 20 40 60 80 100 120 Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W =0.5 T =tp/T tp Tamb(o C) 140 160 20 40 60 80 100 120 140 160 Fig.10 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) Fig.11 : Recovery charges versus dIF/dt. QRR(nC) 90% CONFIDENCE Tj=125 o C IF=IF(av) VR(V) dIF/dt(A/us) 4/6 BYW80(F)-200 Fig.12 : Peak reverse current versus dIF/dt. Fig.13 : Dynamic parameters versus junction temperature. O I RM(A) 90% CONFIDENCE Tj=125 o C QRR;IRM[Tj]/QRR;IRM[Tj=125 C] IF=IF(av) IRM QRR dIF/dt(A/us) T j( o C) PACKAGE MECHANICAL DATA ISOWATT220AC (JEDEC outline) DIMENSIONS REF. Millimeters Min. A B D E F F1 G H L2 L3 L6 L7 Diam Diam A H B Inches Min. Max. Max. L6 L2 L3 L7 F1 F G D E 4.40 4.60 2.50 2.70 2.40 2.75 0.40 0.70 0.75 1.00 1.15 1.70 4.95 5.20 10.00 10.40 16.00 typ. 28.60 30.60 15.90 16.40 9.00 9.30 3.00 3.20 0.173 0.181 0.098 0.106 0.094 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.195 0.205 0.394 0.409 0.63 typ. 1.125 1.205 0.626 0.646 0.354 0.366 0.118 0.126 Cooling method : C Marking : Type number Weight : 2 g Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N 5/6 BYW80(F)-200 PACKAGE MECHANICAL DATA TO-220AC (JEDEC outline) DIMENSIONS REF. H2 C L5 ØI L6 L2 D L7 A Millimeters Min. Max. Inches Min. Max. L9 F1 L4 F G M E A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Cooling method : C Marking : Type number Weight : 1.86 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence of s use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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