®
BYW99P/PI/W
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF
A1 K A2
isolated TOP3I (Plastic) BYW99PI-200
DESCRIPTION Dual center tap rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOT93, TOP3I or TO247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
K A1
A2
SOT93 (Plastic) BYW99P-200
TO247 (Plastic) BYW99W-200
ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Average forward current SOT93 / TO247 δ = 0.5 TOP3I Surge non repetitive forward current Storage and junction temperature range
Tc=120°C Tc=115°C tp=10ms sinusoidal
Parameter
Per diode Per diode Per diode Per diode
Value 35 15 15 200 - 40 to + 150 - 40 to + 150 Value 200
Unit A A
IFSM Tstg Tj Symbol VRRM
A °C °C Unit V
Parameter Repetitive peak reverse voltage
October 1999
Ed : 2A
1/6
BYW99P/PI/W
THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter
SOT93 / TO247 Per diode Total TOP3I Per diode Total
Value 1.8 1.0 2.0 1.25 0.2 0.5
Unit °C/W
Rth (c)
Coupling
SOT93 / TO247 TOP3I
°C/W
When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol IR * Tj = 25°C Tj = 100°C VF ** Tj = 125°C Tj = 125°C Tj = 25°C
Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 %
Test Conditions VR = VRRM
Min.
Typ.
Max. 20 1.5
Unit µA mA V
IF = 12 A IF = 25 A IF = 25 A
0.85 1.05 1.15
To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.016 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr Tj = 25°C Tj = 25°C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A Min. Typ. Max. 25 Unit ns
dIF/dt = -50A/µs
40
tr = 10 ns
15
ns
VFP
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tr = 10 ns
2
V
BYW99P/PI/W
Fig.1 : Average forward power dissipation versus average forward current.
P F(av)(W)
=0.2 =0.05 =0.1 =0.5 =1
Fig.2 : Peak current versus form factor.
20 17.5 15 12.5 10 7.5 5 2.5
350 300 250 200
T
IM(A)
T
IM
=tp/T tp
150 100
P=10W
P=20W P=30W
I F(av)(A)
50
=tp/T tp
0 0
2.5
5
7.5
10
12.5
15
17.5
20
0 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
Fig.3 : Forward voltage drop versus forward current (maximum values).
VFM(V)
Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration.
1.0
K
Zth(j-c) (tp. ) K= Rth(j-c)
=0.5 =0.2 = 0 .1
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
IFM(A)
Tj= 125 oC
0.5
T
0.2
Single pulse
0.1
1
10
100 200
0.1
1.0E-03 1.0E-02
tp(s)
1.0E-01
=tp/T
tp 1. 0E+00
Fig.5 : Non repetitive surge peak forward current versus overload duration. (SOT93, TO247)
160 150 140 130 120 110 100 90 80 70 60 50 40 IM 30 20 10 0 0.001
IM(A)
Fig.6 : Non repetitive surge peak forward current versus overload duration. (TOP3I)
160 150 140 130 120 110 100 90 80 70 60 50 40 IM 30 20 10 0 0.001
IM(A)
Tc=25 oC Tc=75 o C Tc=120 oC
t =0.5
Tc=25 oC
Tc=60 o C
t =0.5
t(s) 0.01 0.1 1
t(s) 0.01 0.1
Tc=115 o C
1
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BYW99P/PI/W
Fig.7 : Average current temperature. (δ = 0.5) (SOT93, TO247)
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0
I F(av)(A)
Rth(j-a)=Rth(j-c)
versus
ambient
Fig.8 : Average temperature. (δ = 0.5) (TOP3I)
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0
I F(av)(A)
current
versus
ambient
Rth(j-a)=Rth(j-c)
Rth(j-a)=15 o C/W =0.5 T
Rth(j-a)=15 o C/W =0.5 T
=tp/T
tp
Tamb(o C)
=tp/T
tp
Tamb(o C)
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Fig.9 : Junction capacitance versus reverse voltage applied (Typical values).
Fig.10 : Recovery charges versus dIF/dt.
2 00 1 90 1 80 1 70 1 60 1 50 1 40 1 30 1 20 11 0
C(pF)
F=1Mhz Tj=25 oC
VR(V)
10 100 200
1 00 1
60 55 90%CONFIDENCE 50 IF=IF(av) 45 40 35 30 25 20 15 10 5 0 1
QRR(nC)
Tj=100 OC
Tj=25 O C
dIF/dt(A/us)
10 100
Fig.11 : Peak reverse current versus dIF/dt.
Fig.12 : Dynamic parameters versus junction temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125o C]
3.0 2.5 2.0 1.5 1.0 0.5 0.0 1
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IRM(A)
90%CONFIDENCE
1.50
Tj=100 O C
IF=IF(av)
1.25 1.00
IRM
0.75
QRR
0.50
Tj=25 O C
0.25 100 0.00 0 25
dIF/dt(A/us)
20 10
Tj( o C)
50
75
100
125
150
BYW99P/PI/W
PACKAGE MECHANICAL DATA SOT93 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.70 4.90 1.185 0.193 1.90 2.10 0.075 0.083 2.50 typ. 0.098 typ. 2.00 typ. 0.078 typ 0.50 0.78 0.020 0.031 1.10 1.30 0.043 0.051 1.75 typ 0.069 typ 2.10 typ. 0.083 typ. 10.80 11.10 0.425 0.437 14.70 15.20 0.279 0.598 12.20 0.480 16.20 0.638 18.0 typ. 0.709 typ. 3.95 4.15 0.156 0.163 31.00 typ. 1.220 typ. 4.00 4.10 0.157 0.161
REF. A C D D1 E F F3 F4 G H L L2 L3 L5 L6 O Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N PACKAGE MECHANICAL DATA TOP3I (isolated)
DIMENSIONS REF. A B C D E F G H J K L P R Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N
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Millimeters Min. Max. 4.4 4.6 1.45 1.55 14.35 15.60 0.5 0.7 2.7 2.9 15.8 16.5 20.4 21.1 15.1 15.5 5.4 5.65 3.4 3.65 4.08 4.17 1.20 1.40 4.60 typ.
Inches Min. Max. 0.173 0.181 0.057 0.061 0.565 0.614 0.020 0.028 0.106 0.114 0.622 0.650 0.815 0.831 0.594 0.610 0.213 0.222 0.134 0.144 0.161 0.164 0.047 0.055 0.181 typ
BYW99P/PI/W
PACKAGE MECHANICAL DATA TO247
V
REF.
V Dia.
H
A
L5
L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3
F1
L1 D
DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143
Marking : Type number Cooling method : C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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