BZW06-33B

® BZW06-5V8/376 BZW06-5V8B/376B TRANSILTM FEATURES s s s s s s PEAK PULSE POWER : 600 W (10/1000µs) STAND-OFF VOLTAGE RANGE : From 5.8V to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol PPP P IFSM Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s a 5mm from case. Tj initial = Tamb Tamb = 75°C tp = 10ms Tj initial = Tamb Value 600 1.7 100 Unit W W A °C °C °C DO-15 Tstg Tj TL - 65 to + 175 175 230 Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit. Llead = 10 mm Parameter Value 60 100 Unit °C/W °C/W February 2003 - Ed : 3A 1/6 BZW06-xx ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop I PP VCL VBR V RM VF I RM V I IF αT VF Types IRM @ VRM max µA 1000 500 10 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VBR min @ IR VCL @ IPP max 10/1000µs V 10.5 11.3 14.5 16.7 21.2 25.2 30.6 33.2 37.5 41.5 45.7 49.9 53.9 64.8 77.0 92.0 113 137 165 207 246 274 A 57.0 53.0 41 36.0 28.0 24.0 19.6 18.0 16.0 14.5 13.1 12.0 11.1 9.3 7.8 6.5 5.3 4.4 3.6 2.9 2.4 2.2 VCL @ IPP max 8/20µs V 13.4 14.5 18.6 21.7 27.2 32.5 39.3 42.8 48.3 53.5 59.0 64.3 69.7 84 100 121 146 178 212 265 317 353 A 298 276 215 184 147 123 102 93 83 75 68 62 57 48 40 33 27.0 22.5 19.0 15.0 12.6 11.3 αT max note3 10 /°C 5.7 6.1 7.3 7.8 8.4 8.8 9.2 9.4 9.6 9.7 9.8 9.6 10.0 10.1 10.3 10.4 10.5 10.6 10.7 10.8 10.8 10.8 -4 C typ note4 pF 4000 3700 2800 2300 1900 1600 1350 1250 1150 1075 1000 950 900 800 700 625 550 500 450 400 360 350 note2 Unidirectional BZW06-5V8 BZW06-6V4 BZW06-8V5 BZW06-10 BZW06-13 BZW06-15 BZW06-19 BZW06-20 BZW06-23 BZW06-26 BZW06-28 BZW06-31 BZW06-33 BZW06-40 BZW06-48 BZW06-58 BZW06-70 BZW06-85 BZW06-102 BZW06-128 BZW06-154 BZW06-171 Bidirectional BZW06-5V8B BZW06-6V4B BZW06-8V5B BZW06-10B BZW06-13B BZW06-15B BZW06-19B BZW06-20B BZW06-23B BZW06-26B BZW06-28B BZW06-31B BZW06-33B BZW06-40B BZW06-48B BZW06-58B BZW06-70B BZW06-85B BZW06-102B BZW06-128B BZW06-154B BZW06-171B V 5.8 6.4 8.5 10.2 12.8 15.3 18.8 20.5 23.1 25.6 28.2 30.8 33.3 40.2 47.8 58.1 70.1 85.5 102 128 154 171 V 6.45 7.13 9.5 11.4 14.3 17.1 20.9 22.8 25.7 28.5 31.4 34.2 37.1 44.7 53.2 64.6 77.9 95.0 114 143 171 190 mA 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2/6 BZW06-xx Types IRM @ VRM VBR @ IR min note2 Unidirectional BZW06-188 BZW06-213 BZW06-256 BZW06-273 BZW06-299 BZW06-342 BZW06-376 Bidirectional BZW06-188B BZW06-213B BZW06-256B BZW06-273B BZW06-299B BZW06-342B BZW06-376B µA 1 1 1 1 1 1 1 V 188 231 256 273 299 342 376 V 209 237 285 304 332 380 418 mA 1 1 1 1 1 1 1 VCL @ IPP max 10/1000µs V 328 344 414 438 482 548 603 A 2.0 2.0 1.6 1.6 1.6 1.3 1.3 V 388 442 529 564 618 706 776 VCL @ IPP max 8/20µs A 10.3 9.0 7.6 7.1 6.5 5.7 5.7 αT max note3 10 /°C 10.8 11.0 11.0 11.0 11.0 11.0 11.0 -4 C typ note4 pF 330 310 290 280 270 360 350 Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). % I PP 100 10 s PULSE WAVEFORM 10/1000 s 50 0 1000 s t Note 2 : Note 3 : Note 4 : Pulse test: tp < 50 ms. ∆VBR = αT * (Tamb - 25) * VBR(25°C) VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2 3/6 BZW06-xx Fig. 2 : Peak pulse power versus exponential pulse duration. Ppp (W) 1E5 Tj initial = 25ø °C 1E4 1E3 1E2 tp (m S ) EXPO. 1E1 0.001 0.01 0.1 1 10 100 Fig. 3 : Clamping voltage versus peak pulse current. Exponential waveform tp = 20 µs________ tp = 1 ms——————tp = 10 m............... Note : The curves of the figure 3 are specified for a junction temperature of 25°C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : ∆VBR = αT * (Tamb -25) * VBR (25°C). For intermediate voltages, extrapolate the given results. 4/6 BZW06-xx Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values). Fig. 5 : Peak forward voltage drop versus peak forward current (typical values for unidirectional types). Fig. 6 : Transient thermal impedance junction ambient versus pulse duration (For FR4 PC Board with L lead = 10mm). Fig. 7 : Relative variation of leakage current versus junction temperature. 5/6 BZW06-xx ORDER BZW 06 - 10 B RL PACKAGING: ‘ ‘ = Ammopack tape ‘RL’ = Tape & reel BIDIRECTIONAL No suffix: Unidirectional 600W STAND-OFF VOLTAGE MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). PACKAGE MECHANICAL DATA DO-15 (Plastic) REF. C A C DIMENSIONS Millimeters Min. Max. 6.75 3.53 31 0.88 Inches Min. 0.238 0.116 1.024 0.028 Max. 0.266 0.139 1.220 0.035 A B D B 6.05 2.95 26 0.71 C D Packaging : standard packaging is in tape and reel. Weight = 0.4 g. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6