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BZW50-10_03

BZW50-10_03

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BZW50-10_03 - TRANSILTM - STMicroelectronics

  • 数据手册
  • 价格&库存
BZW50-10_03 数据手册
® BZW50-10,B/180,B TRANSILTM FEATURES s s s s s s PEAK PULSE POWER : 5000 W (10/1000µs) STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm from case Tj initial = Tamb Tamb = 75°C tp = 10ms Tj initial = Tamb Value 5000 6.5 500 - 65 to + 175 175 230 Unit W W A °C °C °C R6 Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit. Llead = 10 mm Parameter Value 15 65 Unit °C/W °C/W February 2003- Ed : 4A 1/5 BZW50-10,B/180,B ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop Types IRM @ VRM max µA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 VBR min note2 Unidirectional BZW50-10 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47 BZW50-56 BZW50-68 BZW50-82 BZW50-100 BZW50-120 BZW50-150 BZW50-180 Bidirectional BZW50-10B BZW50-12B BZW50-15B BZW50-18B BZW50-22B BZW50-27B BZW50-33B BZW50-39B BZW50-47B BZW50-56B BZW50-68B BZW50-82B BZW50-100B BZW50-120B BZW50-150B BZW50-180B V 10 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 V 11.1 13.3 16.6 20 24.4 30 36.6 43.3 52 62.2 75.6 91 111 133 166 200 mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 @ IR VCL @ IPP max 10/1000µs V 18.8 22 26.9 32.2 39.4 48.3 59 69.4 83.2 99.6 121 145 179 215 269 322 A 266 227 186 155 127 103 85 72 60.1 50 41 34 28 23 19 16 V 23.4 28 35 41.5 51 62 76 90 108 129 157 189 228 274 343 410 I PP VCL VBR V RM VF I RM V IF I αT VF VCL @ IPP max 8/20µs A 2564 2143 1714 1446 1177 968 789 667 556 465 382 317 263 219 175 146 αT max note3 10 / °C 7.8 8.4 8.8 9.2 9.6 9.8 10 10.1 10.3 10.4 10.5 10.6 10.7 10.8 10.8 10.8 -4 C typ note4 pF 24000 18500 13500 11500 8500 7000 5750 4800 4100 3400 3000 2600 2300 1900 1700 1500 % I PP 100 10 s Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). PULSE WAVEFORM 10/1000 s 50 0 1000 s t Note 2 : Note 3 : Note 4 : Pulse test: tp < 50 ms. ∆VBR = αT * (Tamb - 25) * VBR(25°C) VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2. 2/5 BZW50-10,B/180,B Fig. 2 : Peak pulse power versus exponential pulse duration. Pp p (W) 1E7 °C Tj initial = 25ø 1E6 1E5 1E4 1E3 tp (ms ) EXPO. 1E2 0.001 0.01 0.1 1 10 100 Fig. 3 : Clamping voltage versus peak pulse current. Exponential waveform tp = 20 µs________ tp = 1 ms—————tp = 10 ms............... Note : The curves of the figure 3 are specified for a junction temperature of 25°C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : ∆VBR = αT* (Tamb -25) * VBR (25°C). For intermediate voltages, extrapolate the given results. 3/5 BZW50-10,B/180,B Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values). Fig. 5 : Peak forward voltage drop versus peak forward current (typical values for unidirectional types). Note : Multiply by 2 for units with VBR > 220V. Fig. 6 : Transient thermal impedance junction-ambient versus pulse duration (For FR4 PC Board with L lead = 10mm). Fig. 7 : Relative variation of leakage current versus junction temperature. 4/5 BZW50-10,B/180,B ORDER CODE BZW 5000W STAND-OFF VOLTAGE 50 - 10 B RL PACKAGING: ' ' = Ammopack tape 'RL' = Tape & reel BIDIRECTIONAL No suffix: unidirectional MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). PACKAGE MECHANICAL DATA R6 (Plastic) B A B DIMENSIONS REF. Millimeters Min. Typ. Max. 9.1 9.1 1.3 Min. 0.338 1 0.338 0.047 0.358 0.051 8.6 25.4 8.6 1.2 Inches Typ. Max. 0.358 ∅D ∅C A B ∅C ∅D Packaging : standard packaging is tape and reel. Weight = 2.048 g. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5
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