C03DE220HV

STC03DE220HV Features Table 1. VCS(ON) 1V ■ ■ ■ Features IC 3A RCS(ON) 0.33Ω . Low equivalent on resistance Very fast-switch, up to 150 kHz Very low CISS driven by RG = 4.7 Ω 23 4 Applications ■ 1 Aux SMPS for three phase mains TO247-4L HV Description The STC03DE220HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE220HV is designed for use in aux flyback smps for any three phase application. Figure 1. Internal schematic diagrams Table 2. Device summary Marking C03DE220HV Package TO247-4L HV Packaging Tube Order code STC03DE220HV May 2008 Rev 2 1/7 www.st.com 7 W Hybrid emitter switched bipolar transistor ESBT® 2200 V - 3 A - 0.33 Electrical ratings STC03DE220HV 1 Electrical ratings Table 3. Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-source voltage (V BS = VGS =0) Base-source voltage (IC = 0, VGS = 0) Source-base voltage (IC = 0, VGS = 0) Gate-source voltage Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tc ≤25 °C Storage temperature Max. operating junction temperature Value 2200 30 9 Unit V V V V A A A A W °C °C ± 20 3 6 3 6 166 -40 to 150 125 Table 4. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Value 0.6 Unit °C/W 2/7 STC03DE220HV Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 5. Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS) Electrical characteristics Parameter Test conditions Min. Typ. Max. 100 Unit µA Collector-source = 2200 V V current (V BS =VGS = 0) CS(SS) Base-source current (IC =0, VGS = 0) Source-base current (IC =0, VGS = 0) Gate-source leakage (V BS = 0) Collector-source ON voltage DC current gain Base-source ON voltage VBS(OS) = 30 V VSB(OS) = 9 V VGS = ± 20 V VGS = 10 V IC = 1.5 A IB = 0.15 A VGS = 10 V IC = 3 A IB = 0.6 A 0.2 0.25 15 10 0.82 1 1.5 2.2 750 10 µA 100 µA 500 nA V V VCS(ON) hFE VCS = 1 V VGS =10 V IC =1.5 A VCS = 1 V VGS =10 V IC =3 A VGS = 10 V IC = 1.5 A IB = 0.15 A IB = 0.6 A VGS =10 V IC =3 A IB = 250 µA f = 1 MHz VGS = 10 V RG = 4 7 Ω t p = 4 µs IB = 0.3 A VBS(ON) VGS(th) Ciss V V 3 V pF Gate threshold voltage VBS = VGS Input capacitance (VGS = VCB = 0) Gate-source Charge (V CB = 0) INDUCTIVE LOAD Storage time Fall time VCS = 25 V VCS =15 V IC = 1.8 A VGS = 10 V QGS(tot) 12.5 nC ts tf VClamp = 1760 V IC = 1.5 A VCC = V Clamp = 400 V 1040 20 ns ns VCS(dyn) Collector-source dynamic voltage (500 ns) VGS = 10 V IB = 0.3 A tpeak = 500 ns IC = 1.5 A RG = 4 7 Ω IBpeak = 3 A 7.6 V VCC = V Clamp = 400 V VCS(dyn) Collector-source dynamic voltage (1 µs) Maximum collectorsource voltage switched without snubber VGS = 10 V IB = 0.3 A tpeak = 500 ns IC = 1.5 A RG = 4 7 Ω IBpeak = 3 A 5.8 V VCSW RG = 4 7 Ω hFE = 5 IC = 3 A 2200 V 3/7 Package mechanical data STC03DE220HV 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : w ww.st.com 4/7 STC03DE220HV Package mechanical data TO247-4L HV mechanical data DIM. A A1 A2 b b1 b2 c D D1 E e e1 L L1 L2 L3 øP S MIN. 4.85 2.20 0.95 1.10 2.50 0.40 23.85 15.45 mm. TYP 2.50 1.27 1.10 MAX. 5.15 2.60 1.30 1.50 2.90 0.80 24.15 15.75 24 21.50 15.60 2.54 5.08 10.20 2.20 2.50 18.50 3 5.50 10.80 2.80 3.55 3.65 773 4874_A 5/7 Revision history STC03DE220HV 4 Table 6. Revision history Document revision history Revision 1 2 First release. Document status promoted from preliminary data to datasheet. Changes Date 27-Nov-2006 19-May-2008 6/7 STC03DE220HV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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