C08IE120HV

STC08IE120HV Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω General features VCS(ON) 0.8 V ■ IC 8A RCS(ON) High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time ■ ■ ■ ■ ■ Applications ■ ■ Flyback / forward SMPS Sepic PFC Description The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. Order codes Part Number STC08IE120HV Marking C08IE120HV Package TO247-4L HV Packaging Tube January 2007 W 0.10 Internal schematic diagrams Rev 3 ® 1 23 4 TO247-4L HV 1/11 www.st.com 11 STC08IE120HV Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) ........................... 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STC08IE120HV Electrical ratings 1 Electrical ratings Table 1. Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-source voltage (V BS = VGS = 0 V) Base-source voltage (IC = 0, V GS = 0 V) Source-base voltage (IC = 0, V GS = 0 V) Gate-source voltage Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 1200 30 17 Unit V V V V A A A A W °C °C ± 17 8 24 6 12 208 -40 to 150 150 Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case __max Value 0.6 Unit °C/W 3/11 Electrical characteristics STC08IE120HV 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS) Electrical characteristics Parameter Collector-source current (VBS = V GS = 0) Base-source current (IC = 0, VGS = 0) Source-base current (IC = 0, VGS = 0) Gate-source leakage Collector-source ON voltage DC current gain Test Conditions VCE = 1200V VBS(OS) = 30V VSB(OS) = 17V VGS = ± 17V VGS = 10V _IC = 8A VGS = 10V_ IC = 4A VGS = 10V_ IC = 8A VGS = 10V_ IC = 4A_ VGS = 10V_ IC = 8A IB = 1.6A IB = 0.4A VCS = 1V VCS = 1V IB = 1.6A 5 7 1.5 1.5 2 3 550 26 670 15 4 V V V pF nC ns ns 0.8 0.5 Min. Typ. Max. Unit 100 10 100 100 1 1.2 µA µA µA nA V V VCS(ON) hFE VBS(ON) VGS(th) CISS QGS(tot) ts tf Base Source ON voltage Gate threshold voltage Input capacitance Gate-source charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Maximum collectorsource voltage switched without snubber Collector-source dynamic voltage (500ns) Collector-source dynamic voltage VGS = 10V_ IC = 4A_ IB = 0.4A VBS = VGS ______IB = 250µA VCS = 25V ______f = 1MHz VGS = 0 VGS = 10V IC = 4A tp = 4µs IB = 0.4A VGS = 10V VClamp = 960V RG = 47Ω tp = 4µs IC = 4A IB = 0.8A VGS = 10V VClamp = 960V RG = 47Ω ts tf 340 10.2 ns ns VCSW R G = 47 Ω hFE = 5A IC = 8A 1200 V VCS(dyn) VCC = VClamp = 400V V GS = 10V RG = 47Ω IC = 4A IB = 0.8A IBpeak = 4A tpeak = 500ns VCC = VClamp = 400V V GS = 10V RG = 47Ω IC = 4A IB = 0.8A IBpeak = 4A tpeak = 500ns 5.75 V VCS(dyn) 3.35 V (1 µs) 4/11 STC08IE120HV Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. DC current gain Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage Figure 5. Base-source On voltage Figure 6. Base-source On voltage 5/11 Electrical characteristics STC08IE120HV Figure 7. Reverse biased safe operting Figure 8. area Gate threshold voltage vs temperature Figure 9. Dynamic collector-emitter saturation voltage Figure 10. Inductive load switching time Figure 11. Inductive load switching time 6/11 STC08IE120HV Electrical characteristics 2.2 Test circuits Figure 12. Inductive load switching and RBSOA test circuit 7/11 Package mechanical data STC08IE120HV 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STC08IE120HV Package mechanical data TO247-4LHV MECHANICAL DATA DIM. A A1 A2 b b2 c D D1 E e e1 L L1 L2 L3 P S mm. MIN. 4.85 2.20 0.95 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20 2.50 18.50 3 3.55 5.50 3.65 10.80 2.80 24 21.50 15.60 15.75 2.50 1.27 1.10 1.30 2.90 0.80 24.15 TYP MAX. 5.15 2.60 7734874 9/11 Revision history STC08IE120HV 4 Revision history Table 4. Date 11-May-2006 16-Oct-2006 12-Jan-2007 Revision history Revision 1 2 3 Initial release. The lower temperature storage limit has been modified on page 3. The device’s commercial code has been changed from preliminary to full. Changes 10/11 STC08IE120HV Please Read Carefully: IInformation in this document is provided solely in connection with ST products. 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