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DB3TG

DB3TG

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DO-35(DO-204AH)

  • 描述:

    击穿电压(最小值):30V 击穿电压(典型值):32V 击穿电压(最大值):34V 通态重复峰值电流(Itrm):2A

  • 数据手册
  • 价格&库存
DB3TG 数据手册
DB3TG Datasheet Diac in DO-35 with tight VBO Features • VBO: 32 V • • Low breakover current: 15 µA max. Breakover voltage range: 30 to 34 V Applications DO-35 • • • Triggering device for Triac or SCR based motor / light dimmer 32 V trigger device for oscillator circuit Start up triggering in lighting ballast for CFL, TL or LED lamps Description Functioning as a trigger diode with a fixed voltage reference, the DB3TG can be used in conjunction with Triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. Product status link DB3TG Product summary Part number VBO DB3TG 30 - 34 V DS2137 - Rev 3 - May 2019 For further information contact your local STMicroelectronics sales office. www.st.com DB3TG Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit 2.00 A ITRM Repetitive peak on-state current, tp = 20 µs, F = 120 Hz Tstg Storage junction temperature range -40 to +125 °C Operating junction temperature range -40 to +125 °C Tj Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol VBO I VBO1 - VBO2 I ΔV Parameter Test conditions Breakover voltage (1) Dynamic breakover voltage (1) Unit Min. 30 Typ. 32 Max. 34 C = 10 nF (2) Max. 2 V VBO and VF at 10 mA Min. 9 V See Figure 2. Test circuit, (R = 20 Ω) Min. 5 V C = 10 nF (2) Breakover voltage symmetry Value V VO Output voltage IBO Breakover current (1) C = 10 nF (2) Max. 15 µA tr Rise time (1) See Figure 3. Rise time measurement Max. 2 µs IR Leakage current (1) VR = 0.5 x VBO max Max. 10 µA See Figure 2. Test circuit Min. 0.30 A IP Peak current (1) (1) 1. Applicable to both forward and reverse directions. 2. Connected in parallel to the device DS2137 - Rev 3 page 2/9 DB3TG Characteristics Figure 1. Voltage - current characteristic curve. +IF 10 mA IBO IB -V 0,5 V BO ΔV VF +V VBO - IF Figure 2. Test circuit 10 kΩ 220 V 50 Hz 500 kΩ D.U.T Rs = 0 C = 0.1 µF IP Vo T410 R = 20 Ω DS2137 - Rev 3 page 3/9 DB3TG Characteristics Figure 3. Rise time measurement lp 90 % 10 % tr DS2137 - Rev 3 page 4/9 DB3TG Characteristics (curves) 1.1 Characteristics (curves) Figure 4. Relative variation of VBO versus junction temperature (typical values) 1,05 Figure 5. Peak on-state current versus Triac gate current pulse duration tp VBO [T j ] / V BO [T j =25 °C] ITRM(A) f =120 Hz Tj initial = 25°C 10.0 1,00 0,95 1.0 0,90 0,85 T j (°C) 0,80 -40 -20 0 20 40 60 80 100 tp(µs) 0.1 1 120 10 100 Figure 6. Triac gate current pulse duration tp (to have IP > 50 mA) versus Rs and C values (typical values) 50E-6 tp (s) 68 Ω 40E-6 47 Ω 30E-6 33 Ω 20E-6 22 Ω 10E-6 00E+0 10E-9 Note: DS2137 - Rev 3 0Ω 100E-9 10 Ω C (F) 1E-6 according to Figure 2. Test circuit page 5/9 DB3TG Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 DO-35 package information Figure 7. DO-35 package outline C C A ØD ØB Table 3. DO-35 package mechanical data Dimensions Ref. Inches(1) Millimeters Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2 0.060 0.079 C 28 31 1.102 1.220 D 0.46 0.55 0.018 0.022 1. Inches given for reference only DS2137 - Rev 3 page 6/9 DB3TG Ordering information 3 Ordering information Figure 8. Ordering information scheme DB 3 TG Special VBO range Diac Series Breakover voltage 3: VBO typ = 32V Table 4. Ordering information DS2137 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode DB3TG DB3TG (Blue Body Coat) DO-35 0.15 g 5000 Tape and reel page 7/9 DB3TG Revision history Table 5. Document revision history DS2137 - Rev 3 Date Version Changes Oct-2001 2 Previous release. 07-May-2019 3 Updated Section 1.1 Characteristics (curves). page 8/9 DB3TG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS2137 - Rev 3 page 9/9
DB3TG 价格&库存

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DB3TG
  •  国内价格
  • 20+0.62260
  • 100+0.37140
  • 500+0.25990
  • 5000+0.18570
  • 10000+0.17630
  • 50000+0.16330

库存:3875