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DMV1500HDFD

DMV1500HDFD

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO220FP

  • 描述:

    DIODE DAMPER/MOD VID TO-220FPAB

  • 数据手册
  • 价格&库存
DMV1500HDFD 数据手册
DMV1500HD Damper + modulation diode for CRT TV Features Damper ■ Full kit in one package ■ High breakdown voltage capability ■ Very fast recovery diode ■ Specified turn on switching characteristics ■ Low static and peak forward voltage drop for low dissipation 1 ■ Insulated version: – Insulated voltage = 2000 VRMS – Capacitance = 7 pF ■ Planar technology allowing high quality and best electrical characteristics ■ 3 e t le o r P ) s t( 3 1 2 TO-220FPAB FD6 bending DMV1500HDFD6 (optional) o s b O Table 1. ct o r P e 2 c u d The insulated TO-220FPAB package includes both the damper diode and the modulation diode, thanks to a dedicated design. du 3 TO-220FPAB DMV1500HDFD High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. (s) 2 1 Outstanding performance of well proven DTV as damper and new faster Turbo 2 600 V technology as modulation Description Modulation Assembled on automated line, it offers very low dispersion values on insulating and thermal performanes. t e l o Device summary Symbol Damper Modulation IF(AV) 6A 3A IFpeak (max) 12 A 12 A VRRM 1500 V 600 V trr (typ) 150 ns 60 ns VF (typ) 1.0 V 1.0 V VFP (typ) 21 V 5V s b O December 2008 Rev 2 1/9 www.st.com 9 Characteristics DMV1500HD 1 Characteristics Table 2. Absolute maximum ratings Value Symbol Parameter Unit Damper Modulation 1500 600 V VRRM Repetitive peak reverse voltage IFpeak Peak working forward current F = 56 kHz 12 12 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 50 A Tstg Storage temperature range Tj -40 to +150 °C 150 °C Maximum operating junction temperature Table 3. Thermal resistance Symbol Parameter Value Junction to case thermal resistance Rth(j-c) Table 4. 3.8 c u d Static electrical characteristics o r P Value Symbol Parameter Test conditions Tj = 25 °C e t le Typ. Damper IR (1) Reverse leakage current VF (2) Forward voltage drop VR = 1500 V so Modulation VR = 600 V Damper b O IF = 6 A 1.5 ) s ( ct 2. Pulse test: tp = 380 µs, δ < 2% ) s t( Tj = 125 °C Max. Typ. Max. 100 100 1000 20 3 50 2.3 1.25 1.7 1.8 1.1 1.4 °C/W Unit µA V Modulation IF = 3 A 1. Pulse test: tp = 5 ms, δ < 2% Unit u d o To evaluate the maximum conduction losses of the damper and modulation diodes use the following equations : Damper: P = 1.05 x IF(AV) + 0.05 x IF2(RMS) r P e Modulation: P = 0.89 x IF(AV) + 0.055 x IF2(RMS) Table 5. Recovery characteristics t e l o Symbol s b O trr 2/9 Parameter Reverse recovery time Value Test conditions Damper Typ. IF = 100 mA IR =100 mA IRR = 10 mA Tj = 25 °C IF = 1 A dIF/dt = -50 A/µs VR =30 V Tj = 25 °C Max. 1000 Modulation Typ. Max. 250 400 Unit ns 150 250 60 85 DMV1500HD Table 6. Characteristics Turn-on switching characteristics Value Symbol Parameter Test conditions Max. IF = 6 A dIF/dt = 80 A/µs Tj = 100 °C VFR = 3 V 330 470 IF = 6 A Modulation dIF/dt = 80 A/µs Tj = 100 °C VFR = 2 V 85 125 IF = 6 A Tj = 100 °C dIF/dt = 80 A/µs 21 29 I =6A Modulation F Tj = 100 °C dIF/dt = 80 A/µs 5 Damper Forward recovery time tfr Damper VFP Peak forward voltage Figure 1. Unit Typ. Power dissipation vs. peak forward Figure 2. current (triangular waveform, δ = 0.45) PF(AV)(W) V 7.5 Average forward current vs. ambient temperature c u d IF(AV)(A) 7 4.5 Rth(j-a)=Rth(j-c) 4.0 ) s t( o r P DAMPER diode 6 3.5 5 3.0 MODULATION diode 2.5 e t le 4 DAMPER diode 2.0 3 so 1.5 2 MODULATION diode 1.0 T b O 1 0.5 IP(A) δ=tp/T Tamb(°C) tp 0 0.0 0 1 2 Figure 3. 3 4 5 6 7 8 9 10 11 ) s ( ct 12 Forward voltage drop vs. forward current (damper diode) IFM(A) 15 o r P e 14 13 du 11 9 7 6 4 75 100 125 150 Forward voltage drop vs. forward current (modulation diode) 9 Tj=125°C (maximum values) 7 6 Tj=125°C (typical values) 5 Tj=25°C (maximum values) bs 5 Figure 4. 50 IFM(A) Tj=125°C (typical values) 8 25 8 t e l o 10 0 10 Tj=125°C (maximum values) 12 O ns 4 Tj=25°C (maximum values) 3 2 3 2 1 VFM(V) 1 VFM(V) 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 3/9 Characteristics Figure 5. DMV1500HD Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Zth(j-c)/Rth(j-c) Reverse recovery charges vs. dIF/dt (damper diode, typical values) Qrr(µC) 1.0 4.0 0.9 IF=IP Tj=125°C 3.5 0.8 3.0 0.7 2.5 0.6 DAMPER diode MODULATION diode 0.5 2.0 0.4 1.5 0.3 1.0 0.2 0.5 0.1 tp(s) dIF/dt(A/µs) Single pulse 0.0 0.0 1.E-03 1.E-02 Figure 7. 1.E-01 1.E+00 1.E+01 0.1 1.E+02 Reverse recovery charges vs. dIF/dt (modulation diode, typical values) 1.0 Figure 8. Qrr(nC) c u d 5.0 4.5 IF=IP Tj=125°C 250 IF=IP Tj=125°C 3.5 3.0 150 e t le 2.5 2.0 100 o s b O 1.5 1.0 50 0.5 dIF/dt(A/µs) ) s t( o r P 4.0 200 100.0 Peak reverse recovery current vs. dIF/dt (damper diode, typical values) IRM(A) 300 dIF/dt(A/µs) 0.0 0 0.1 1.0 Figure 9. IF=IP Tj=125°C 3.0 t e l o 2.0 u d o Figure 10. Transient peak forward voltage vs. dIF/dt (damper diode, typical values) 40 IF=IP Tj=100°C 35 30 25 15 10 1.0 5 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0 0.0 0.1 10.0 20 s b O 1.5 1.0 VFP(V) r P e 3.5 0.1 100.0 ) s ( ct IRM(A) 2.5 10.0 Peak reverse recovery current vs. dIF/dt (modulation diode, typical values) 4.0 4/9 10.0 1.0 10.0 100.0 0 20 40 60 80 100 120 140 160 180 200 DMV1500HD Characteristics Figure 11. Transient peak forward voltage vs. dIF/dt (modulation diode, typical values) Figure 12. Forward recovery time vs. dIF/dt (damper diode, typical values) tfr(ns) VFP(V) 600 10 9 IF=IP VFR=3.0V Tj=100°C 550 IF=IP Tj=100°C 500 8 450 7 400 6 350 5 300 4 250 200 3 150 2 100 1 50 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 20 40 60 80 100 120 140 160 180 200 Figure 13. Forward recovery time vs. dIF/dt (modulation diode, typical values) 0 20 40 60 80 100 120 140 160 c u d IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C] tfr(ns) 1.2 IF=IP VFR=2.0V Tj=100°C 1.0 100 0.8 80 e t le VFP 0.6 60 IRM 0.4 40 200 Figure 14. Relative variation of dynamic parameters vs. junction temperature 140 120 180 o s b O QRR ) s t( o r P 0.2 20 dIF/dt(A/µs) 0 Tj(°C) 0.0 0 20 40 60 80 100 120 140 160 180 200 ) s ( ct 25 50 75 100 125 Figure 15. Junction capacitance vs. reverse voltage applied (typical values) C(pF) 100 o r P e s b O t e l o du 10 F=1MHz VOSC=30mVRMS Tj=25°C DAMPER diode MODULATION diode VR(V) 1 1 10 100 1000 5/9 Package information 2 DMV1500HD Package information ● Epoxy meets UL94,V0 ● Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com Table 7. TO-220FPAB dimensions Dimensions Ref. A B H Max. Min. A 4.4 4.6 B 2.5 2.7 D 2.5 uc L3 L5 F1 L4 uc F2 od F G1 r P e t e l o bs O 6/9 G (t s) D 0.098 0.108 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.50 0.045 0.059 1.15 1.50 0.045 0.059 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 F2 d o r P e let o s b O L2 E 0.181 0.106 F L7 L2 0.173 ) s t( Max. 0.098 F1 L6 Inches Min. E Dia Millimeters 0.45 2.75 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 DMV1500HD Package information Table 8. TO-220FPAB F6 dimensions Dimensions Ref. A B H Dia L6 L2 L7 L5 Max. Min. Max. A 4.4 4.9 0.173 0.192 B 2.5 2.9 0.098 0.114 D 2.45 2.75 0.096 0.108 E 0.4 0.7 0.016 0.028 F 0.6 1 0.024 0.039 G 4.8 5.3 0.195 0.205 G1 2.2 2.95 0.094 0.106 H 10 10.7 0.394 0.421 L2 12.7 12.8 0.500 L4 3.4 G1 E L7 M2 M1 G o s b O M2 15.8 Dia. 0.165 16.4 0.622 0.646 9.9 0.354 0.390 3.75 Typ. 7 8 1 Typ. 2.9 0.150 d o r 9 R ) s ( ct 4.8 P e let L6 M1 ) s t( 0.504 0.189 Typ. 2.9 Typ. L3 F uc 4.8 Typ. L5 R Inches Min. L3 L4 D Millimeters 0.114 Typ. 0.148 Typ. 0.276 0.315 0.039 Typ. 3.5 0.114 0.138 Figure 16. TO-220FPAB FD6 PCB layout (typical dimensions in millimeters) u d o 2.54 r P e t e l o O bs 7.5 2.2 7.9 1.0 7/9 Ordering information 3 DMV1500HD Ordering information Table 9. Ordering information Order code 4 Marking Package Weight Base qty Delivery mode DMV1500HDFD DMV1500HD TO-220FPAB 2.4 g 50 Tube DMV1500HDFD6 DMV1500HD TO-220FPAB F6 2.4 g 45 Tube Revision history Table 10. Document revision history Date Revision Changes 16-Mar-2005 1 Initial release. 02-Dec-2008 2 Reformatted to current standards. Updated ECOPACK statement. Updated dimension illustration for TO-220FPAB FD6 in Table 8. c u d e t le ) s ( ct u d o r P e t e l o s b O 8/9 o s b O - o r P ) s t( DMV1500HD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ) s t( Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. c u d No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. e t le o r P UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. o s b O - UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. ) s ( ct u d o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. r P e t e l o ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. bs The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. O © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9
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