DMV1500HFD

DMV1500H ® DAMPER + MODULATION DIODE FOR VIDEO Table 1: Main Product Characteristics IF(AV) DAMPER 6A MODUL. 3A VRRM 1500 V 600 V trr (max) 125 ns 50 ns VF (max) 1.7 V 1.4 V DAMPER 1 MODULATION 2 3 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ ■ ■ Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2000 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation 1 2 3 TO-220FPAB DMV1500HFD 2 1 3 TO-220FPAB F5 Bending DMV1500HFD5 (optional) DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220FPAB package includes both the DAMPER diode and the MODULATION diode, thanks to a dedicated design. Assembled on automated line, it offers very low dispersion values on insulating and thermal performanes. Order Codes Part Number DMV1500HFD DMV1500HFD5 September 2004 Marking DMV1500H DMV1500H REV. 1 1/8 DMV1500H Table 3: Absolute Maximum Ratings Symbol VRRM Repetitive peak reverse voltage IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Value Damper Modul. Parameter Unit 1500 600 V 80 35 A tp = 10ms sinusoidal -40 to +150 °C 150 °C Maximum operating junction temperature Table 4: Thermal Resistance Symbol Rth(j-c) Parameter Value Unit 3.6 °C/W Junction to case thermal resistance Table 5: Static Electrical Characteristics Value Symbol Parameter Test conditions Tj = 25°C Typ. IR * VF ** Pulse test: Reverse leakage current Forward voltage drop Tj = 125°C Max. Typ. Max. Damper VR = 1500 V 100 100 1000 Modul. VR = 600 V 20 3 50 Damper IF = 6 A 2.3 1.25 1.7 Modul. IF = 3 A 1.8 1.1 1.4 1.5 Unit µA V * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations : 2 DAMPER: P = 1.35 x IF(AV) + 0.59 x IF (RMS) 2 MODULATION: P = 1.12 x IF(AV) + 0.092 x IF (RMS) Table 6: Recovery Characteristics Value Symbol Parameter Test conditions Damper Typ. trr 2/8 Reverse recovery time IF = 100mA IR =100mA IRR = 10mA Tj = 25°C IF = 1A dIF/dt = -50 A/µs VR =30V Tj = 25°C Max. 625 Modul. Typ. Max. 110 350 Unit ns 95 125 35 50 DMV1500H Table 7: Turn-On Switching Characteristics Symbol Parameter tfr Typ. Damper IF = 6 A dIF/dt = 80 A/µs VFR = 3 V Tj = 100°C Modul. IF = 3 A dIF/dt = 80 A/µs VFR = 2 V Tj = 100°C Damper IF = 6 A dIF/dt = 80 A/µs Tj = 100°C Modul. IF = 3 A dIF/dt = 80 A/µs Tj = 100°C Forward recovery time VFP Value Test conditions Peak forward voltage Figure 1: Power dissipation versus peak forward current (triangular waveform, δ=0.45) Unit Max. 350 ns 240 18 25 V 8 Figure 2: Average forward current versus ambient temperature PF(AV)(W) IF(AV)(A) 2.2 7 2.0 Rth(j-a)=Rth(j-c) 6 1.8 DAMPER diode 1.6 5 DAMPER diode 1.4 4 1.2 Rth(j-a)=Rth(j-c) 1.0 3 0.8 MODULATION diode 2 0.6 0.4 MODULATION diode T 1 0.2 δ=tp/T IP(A) Tamb(°C) tp 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 Figure 3: Forward voltage drop versus forward current (damper diode) 25 50 75 100 125 150 Figure 4: Forward voltage drop versus forward current (modulation diode) IFM(A) IFM(A) 15 10 Tj=125°C (maximum values) 9 Tj=125°C (maximum values) 8 7 10 6 Tj=125°C (typical values) Tj=125°C (typical values) 5 Tj=25°C (maximum values) 4 5 Tj=25°C (maximum values) 3 2 1 VFM(V) VFM(V) 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3/8 DMV1500H Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Figure 6: Non repetitive peak forward current versus overload duration (damper diode) Zth(j-c)/Rth(j-c) IM(A) 35 1.0 0.9 30 0.8 25 0.7 0.6 20 DAMPER diode MODULATION diode TC=25°C 0.5 15 0.4 TC=75°C 0.3 10 0.2 TC=125°C IM 5 0.1 t tp(s) 1.E-03 1.E-02 1.E-01 t(s) δ=0.5 Single pulse 0 0.0 1.E+00 1.E+01 1.E+02 Figure 7: Non repetitive peak forward current versus overload duration (modulation diode) 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8: Reverse recovery charges versus dIF/dt (damper diode) IM(A) Qrr(nC) 30 1200 25 1000 IF=IP Tj=125°C 90% confidence 800 20 TC=25°C 600 15 TC=75°C 400 10 TC=125°C IM 5 t 200 dIF/dt(A/µs) t(s) δ=0.5 0 0 1.E-03 1.E-02 1.E-01 0.1 1.E+00 Figure 9: Reverse recovery charges versus dIF /dt (modulation diode) 1.0 10.0 Figure 10: Peak reverse recovery current versus dIF/dt (damper diode) Qrr(nC) IRM(A) 200 2.4 2.2 IF=IP Tj=125°C 90% confidence IF=IP Tj=125°C 90% confidence 2.0 150 1.8 1.6 1.4 1.2 100 1.0 0.8 0.6 50 0.4 0.0 0 0.1 4/8 dIF/dt(A/µs) 0.2 dIF/dt(A/µs) 1.0 10.0 100.0 0.1 1.0 10.0 DMV1500H Figure 11: Peak reverse recovery current versus dIF/dt (modulation diode) Figure 12: Transient peak forward voltage versus dIF/dt (damper diode) IRM(A) VFP(V) 6.0 40 IF=IP Tj=125°C 90% confidence 5.0 IF=IP Tj=125°C 90% confidence 35 30 4.0 25 3.0 20 15 2.0 10 1.0 5 dIF/dt(A/µs) dIF/dt(A/µs) 0 0.0 1 10 100 0 1000 Figure 13: Transient peak forward voltage versus dIF/dt (modulation diode) 20 40 60 80 100 120 140 Figure 14: Forward recovery time versus dIF/dt (damper diode) tfr(ns) VFP(V) 800 12 11 IF=IP Tj=125°C 90% confidence 10 IF=IP Tj=125°C VFR=3V 90% confidence 750 700 9 650 8 7 600 6 550 5 500 4 450 3 400 2 1 350 dIF/dt(A/µs) 0 dIF/dt(A/µs) 300 0 20 40 60 80 100 120 140 160 180 200 Figure 15: Forward recovery time versus dIF/dt (modulation diode) 0 20 40 60 80 100 120 140 Figure 16: Relative variation of dynamic parameters versus junction temperature IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C] tfr(ns) 1.2 200 IF=IP Tj=125°C VFR=2V 90% confidence 175 1.0 150 0.8 125 VFP 0.6 100 75 IRM 0.4 50 QRR 0.2 25 Tj(°C) dIF/dt(A/µs) 0 0.0 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 5/8 DMV1500H Figure 17: Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25°C DAMPER diode MODULATION diode 10 VR(V) 1 1 10 100 1000 Figure 18: TO-220FPAB Package Mechanical Data REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Dia. 6/8 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.192 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.7 0.016 0.027 0.6 1 0.024 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.630 Typ. 28.6 30.6 1.126 1.205 9.8 10.7 0.385 0.421 15.8 16.4 0.622 0.646 9 9.9 0.354 0.390 2.9 3.5 0.114 0.138 DMV1500H Figure 19: TO-220FPAB F5 Bending (option) Package Mechanical Data REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 M1 R Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.192 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.7 0.016 0.027 0.6 1 0.024 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.630 Typ. 24.16 26.9 0.951 1.059 1.65 2.41 0.065 0.095 15.8 16.4 0.622 0.646 9 9.9 0.354 0.390 2.92 3.3 0.115 0.130 1.4 Typ. 0.055 Typ. 2.9 3.5 0.114 0.138 Table 8: Ordering Information Part Number Marking Package Weight Base qty DMV1500HFD DMV1500HFD5 DMV1500H DMV1500H TO-220FPAB TO-220FPAB F5 2.4 g 2.4 g 50 45 Delivery mode Tube Tube Table 9: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue 7/8 DMV1500H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8