DMV1500SD
Damper + modulation diode for CRT TV
Features
Damper
■
Full kit in one package
■
High breakdown voltage capability
■
Very fast recovery diode
■
Specified turn on switching characteristics
■
Low static and peak forward voltage drop for
low dissipation
■
Insulated version:
– Insulated voltage = 2000 VRMS
– Capacitance = 7 pF
■
Planar technology allowing high quality and
best electrical characteristics
■
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600 V
technology as modulation
1
Description
2
3
c
u
d
e
t
le
o
s
b
O
-
Assembled on automated line, it offers very low
dispersion values on insulating and thermal
performanes.
t
e
l
o
o
r
P
)
s
t(
3
1
2
TO-220FPAB FD6 bending
DMV1500SDFD6 (optional)
Table 1.
ct
o
r
P
e
3
TO-220FPAB
DMV1500SDFD
The insulated TO-220FPAB package includes
both the damper diode and the modulation diode,
thanks to a dedicated design.
du
2
1
High voltage semiconductor especially designed
for horizontal deflection stage in standard and
high resolution video display with E/W correction.
(s)
Modulation
Device summary
Symbol
Damper
Modulation
IF(AV)
6A
6A
IFpeak (max)
12 A
12 A
VRRM
1500 V
600 V
trr (typ)
150 ns
60 ns
VF (typ)
1.1 V
1.0 V
VFP (typ)
26 V
5V
s
b
O
December 2008
Rev 4
1/9
www.st.com
9
Characteristics
DMV1500SD
1
Characteristics
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
Damper
Modulation
1500
600
V
VRRM
Repetitive peak reverse voltage
IFpeak
Peak working forward current
F = 56 kHz
12
12
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
50
50
A
Tstg
Storage temperature range
Tj
-40 to +150
°C
150
°C
Maximum operating junction temperature
Table 3.
Thermal resistance
Symbol
Parameter
Value
Junction to case thermal resistance
Rth(j-c)
Table 4.
4.0
c
u
d
Static electrical characteristics
o
r
P
Value
Symbol
Parameter
Test conditions
Tj = 25 °C
e
t
le
Typ.
Damper
IR
(1)
Reverse leakage current
o
s
b
O
-
Modulation
VR = 600 V
Modulation
Damper
VF (2)
VR = 1500 V
Forward voltage drop
2. Pulse test: tp = 380 µs, δ < 2%
)
s
t(
Tj = 125 °C
Max.
Typ.
Max.
100
100
1000
3
3
30
°C/W
Unit
µA
IF = 6 A
1.2
1.75
1.1
1.5
Modulation IF = 6 A
1.15
1.4
1
1.25
)
s
(
ct
1. Pulse test: tp = 5 ms, δ < 2%
Unit
V
u
d
o
To evaluate the maximum conduction losses of the damper and modulation diodes use the following equations :
r
P
e
Damper: P = 1.2 x IF(AV) + 0.050 x IF2(RMS)
Modulation: P = 0.89 x IF(AV) + 0.055 x IF2(RMS)
t
e
l
o
Table 5.
bs
Symbol
Recovery characteristics
Parameter
O
trr
2/9
Reverse recovery time
Value
Test conditions
IF = 100 mA
IR =100 mA
IRR = 10 mA
Tj = 25 °C
IF = 1 A
Tj = 25 °C
dIF/dt = -50
A/µs VR = 30 V
Damper
Modulation
Typ.
Max.
Typ.
Max.
1000
2000
250
400
Unit
ns
150
250
60
85
DMV1500SD
Table 6.
Characteristics
Turn-on switching characteristics
Value
Symbol
Parameter
Test conditions
Max.
IF = 6 A
dIF/dt = 80 A/µs Tj = 100 °C
VFR = 3 V
350
500
IF = 6 A
Modulation dIF/dt = 80 A/µs Tj = 100 °C
VFR = 2 V
85
125
IF = 6 A
Tj = 100 °C
dIF/dt = 80 A/µs
26
36
I =6A
Modulation F
Tj = 100 °C
dIF/dt = 80 A/µs
5
Damper
Forward recovery time
tfr
Damper
VFP
Peak forward voltage
Figure 1.
Unit
Typ.
Power dissipation vs. peak forward Figure 2.
current (triangular waveform,
δ = 0.45) (damper diode)
PF(AV)(W)
Power dissipation vs. peak forward
current (triangular waveform,
δ = 0.45) (modulation diode)
c
u
d
3.0
3.5
2.5
3.0
2.5
e
t
le
2.0
2.0
1.5
1.5
o
s
b
O
1.0
1.0
0.5
0.5
IP(A)
0.0
IP(A)
0.0
0
1
2
Figure 3.
3
4
5
6
IF(AV)(A)
o
r
P
e
Rth(j-a)=Rth(j-c)
6
5
t
e
l
o
4
s
b
O
7
8
9
10
11
)
s
(
ct
12
Average forward current vs.
ambient temperature
7
0
1
2
Figure 4.
du
3
4
5
6
7
8
9
10
11
12
Forward voltage drop vs. forward
current (damper diode)
IFM(A)
15
14
Tj=125°C
(maximum values)
13
DAMPER diode
12
11
10
9
MODULATION diode
Tj=125°C
(typical values)
8
7
Tj=25°C
(maximum values)
6
5
4
T
3
1
2
δ=tp/T
0
)
s
t(
o
r
P
3.5
4.0
0
7.5
4.0
4.5
2
V
PF(AV)(W)
5.0
3
ns
Tamb(°C)
tp
1
VFM(V)
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
3/9
Characteristics
Figure 5.
DMV1500SD
Forward voltage drop vs. forward
current (modulation diode)
Figure 6.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
IFM(A)
1.0
10
9
0.9
Tj=125°C
(maximum values)
0.8
8
MODULATION diode
0.7
7
DAMPER diode
6
0.6
Tj=125°C
(typical values)
0.5
5
Tj=25°C
(maximum values)
4
0.4
3
0.3
2
0.2
1
0.1
VFM(V)
0
tp(s)
0.4
Figure 7.
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Reverse recovery charges vs.
dIF/dt (damper diode)
1.E-03
1.E-01
1.E+00
Qrr(nC)
c
u
d
IF=IP
Tj=125°C
IF=IP
Tj=125°C
250
3.0
200
2.5
150
2.0
e
t
le
1.5
100
1.0
o
s
b
O
50
0.5
dIF/dt(A/µs)
0.0
1.E+01
1.E+02
Reverse recovery charges vs.
dIF/dt (modulation diode)
300
4.0
3.5
1.E-02
Figure 8.
Qrr(µC)
)
s
t(
o
r
P
dIF/dt(A/µs)
0
0.1
1.0
Figure 9.
10.0
(s)
t
c
u
IRM(A)
r
P
e
3.5
3.0
2.5
1.5
s
b
O
1.0
0.5
10.0
100.0
Figure 10. Peak reverse recovery current vs.
dIF/dt (modulation diode)
IF=IP
Tj=125°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0.0
0.1
1.0
IRM(A)
t
e
l
o
2.0
0.1
4.0
od
IF=IP
Tj=125°C
4.0
100.0
Peak reverse recovery current vs.
dIF/dt (damper diode)
4.5
4/9
Single pulse
0.0
0.2
0.0
1.0
10.0
0.1
1.0
10.0
100.0
DMV1500SD
Characteristics
Figure 11. Transient peak forward voltage vs.
dIF/dt (damper diode, typical
values)
Figure 12. Transient peak forward voltage vs.
dIF/dt (modulation diode, typical
values)
VFP(V)
VFP(V)
50
10
IF=IP
Tj=100°C
45
IF=IP
Tj=100°C
9
40
8
35
7
30
6
25
5
20
4
15
3
10
2
5
1
dIF/dt(A/µs)
0
dIF/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
Figure 13. Forward recovery time vs. dIF/dt
(damper diode, typical values)
0
20
40
60
80
100
120
140
tfr(ns)
tfr(ns)
uc
140
IF=IP
Tj=100°C
VFR=3V
120
600
d
o
r
100
500
400
60
300
40
o
s
b
O
20
100
dIF/dt(A/µs)
0
200
)
s
t(
IF=IP
Tj=100°C
VFR=2V
P
e
let
80
200
180
Figure 14. Forward recovery time vs. dIF/dt
(modulation diode, typical values)
800
700
160
dIF/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
(s)
Figure 15. Relative variation of dynamic
parameters vs. junction
temperature
200
0
t
c
u
0.8
80
100
120
140
160
180
200
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
MODULATION diode
t
e
l
o
VFP
0.6
60
C(pF)
d
o
r
P
e
1.0
40
Figure 16. Junction capacitance vs. reverse
voltage applied (typical values)
IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C]
1.2
20
10
DAMPER diode
IRM
bs
0.4
QRR
O
0.2
Tj(°C)
VR(V)
1
0.0
25
50
75
100
125
1
10
100
1000
5/9
Package information
2
DMV1500SD
Package information
●
Epoxy meets UL94,V0
●
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com
Table 7.
TO-220FPAB dimensions
Dimensions
Ref.
A
B
H
Max.
Min.
A
4.4
4.6
B
2.5
2.7
D
2.5
uc
L3
L5
F1
L4
uc
F2
od
F
G1
r
P
e
t
e
l
o
bs
O
6/9
G
(t s)
D
0.098
0.108
0.70
0.018
0.027
0.75
1
0.030
0.039
1.15
1.50
0.045
0.059
1.15
1.50
0.045
0.059
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
F2
d
o
r
P
e
let
o
s
b
O
L2
E
0.181
0.106
F
L7
L2
0.173
)
s
t(
Max.
0.098
F1
L6
Inches
Min.
E
Dia
Millimeters
0.45
2.75
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
DMV1500SD
Package information
Table 8.
TO-220FPAB F6 dimensions
Dimensions
Ref.
A
B
H
Dia
L6
L2
L7
L5
Max.
Min.
Max.
A
4.4
4.9
0.173
0.192
B
2.5
2.9
0.098
0.114
D
2.45
2.75
0.096
0.108
E
0.4
0.7
0.016
0.028
F
0.6
1
0.024
0.039
G
4.8
5.3
0.195
0.205
G1
2.2
2.95
0.094
0.106
H
10
10.7
0.394
0.421
L2
12.7
12.8
0.500
L4
3.4
G1
E
L7
M2
M1
G
o
s
b
O
M2
15.8
Dia.
0.165
16.4
0.622
0.646
9.9
0.354
0.390
3.75 Typ.
7
8
1 Typ.
2.9
0.150
d
o
r
9
R
)
s
(
ct
4.8
P
e
let
L6
M1
)
s
t(
0.504
0.189 Typ.
2.9 Typ.
L3
F
uc
4.8 Typ.
L5
R
Inches
Min.
L3
L4
D
Millimeters
0.114 Typ.
0.148 Typ.
0.276
0.315
0.039 Typ.
3.5
0.114
0.138
Figure 17. TO-220FPAB FD6 PCB layout (typical dimensions in millimeters)
u
d
o
2.54
r
P
e
t
e
l
o
O
bs
7.5
2.2
7.9
1.0
7/9
Ordering information
3
DMV1500SD
Ordering information
Table 9.
Ordering information
Order code
4
Marking
Package
Weight
Base qty
Delivery mode
DMV1500SDFD
DMV1500SD
TO-220FPAB
2.4 g
50
Tube
DMV1500SDFD6
DMV1500SD
TO-220FPAB FD6
2.4 g
45
Tube
Revision history
Table 10.
Document revision history
Date
Revision
Changes
25-Oct-2004
1
First issue
10-Dec-2004
2
TO-220FPAB FD6 package mechanical data changes:
1. Ref. G: from 4.95 - 5.2 mm to 4.8 - 5.3 mm
2. Ref. G1: from 2.4 - 2.7 mm to 2.2 - 2.95 mm
3. Ref. L4: from 3.8 - 4.2 mm to 3.4 - 4.8 mm
4. Ref L5 addition: 2.9 mm typ.
16-Mar-2005
3
IFpeak parameter included
02-Dec-2008
4
Reformatted to current standards. Updated ECOPACK statement.
Updated dimension illustration for TO-220FPAB FD6 in Table 8.
c
u
d
e
t
le
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
s
b
O
8/9
o
s
b
O
-
)
s
t(
o
r
P
DMV1500SD
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
)
s
t(
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
c
u
d
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
e
t
le
o
r
P
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
o
s
b
O
-
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
)
s
(
ct
u
d
o
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
r
P
e
t
e
l
o
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
bs
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
O
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
9/9
很抱歉,暂时无法提供与“DMV1500SDFD6”相匹配的价格&库存,您可以联系我们找货
免费人工找货