LIS3L02AS5
MEMS INERTIAL SENSOR:
3-axis - ±2g/6g LINEAR ACCELEROMETER
Features
■
4.5 TO 5.5V SINGLE SUPPLY OPERATION
■
LOW POWER CONSUMPTION
■
±2g/±6g USER SELECTABLE FULL-SCALE
■
0.5mg RESOLUTION OVER 100Hz
BANDWIDTH
■
EMBEDDED SELF TEST AND POWER
DOWN
■
OUTPUT VOLTAGE, OFFSET AND
SENSITIVITY RATIOMETRIC TO THE
SUPPLY VOLTAGE
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
Description
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
Orderocodes
s
b
O
■
HIGH SHOCK SURVIVABILITY
■
LEAD FREE AND ECOPACK COMPATIBLE
The LIS3L02AS5 is a low-power three axes linear
accelerometer that includes a sensing element
and an IC interface able to take the information
from the sensing element and to provide an
analog signal to the external world.
The sensing element, capable of detecting the
acceleration, is manufactured using a dedicated
process developed by ST to produce inertial
sensors and actuators in silicon.
The IC interface is manufactured using a standard
CMOS process that allows high level of integration
SO24
to design a dedicated circuit which is trimmed to
better match the sensing element characteristics.
The LIS3L02AS5 has a user selectable full scale
of ±2g, ±6g and it is capable of measuring
accelerations over a bandwidth of 1.5kHz for all
axes. The device bandwidth may be reduced by
using external capacitances. A self-test capability
allows to check the mechanical and electrical
signal path of the sensor.
The LIS3L02AS5 is available in plastic SMD
package and it is specified over an extended
temperature range of -40°C to +85°C.
The LIS3L02AS5 belongs to a family of products
suitable for a variety of applications:
– Mobile terminals
– Gaming and Virtual Reality input devices
– Free-fall detection for data protection
– Antitheft systems and Inertial Navigation
– Appliance and Robotics.
Part number
Temp range, ° C
Package
Packing
LIS3L02AS5
-40°C to +85°C
SO24
Tray
LIS3L02AS5TR
-40°C to +85°C
SO24
Tape & Reel
December 2005
Rev 1
1/14
www.st.com
14
LIS3L02AS5
Contents
1
2
Block Diagram & Pins Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Mechanical and Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Mechanical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
3
4
2.2
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1
Sensing element . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.2
IC Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.3
Factory calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Application hints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
Soldering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2
Output response vs orientation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
LIS3L02AS5
1 Block Diagram & Pins Description
1
Block Diagram & Pins Description
1.1
Block diagram
Figure 1.
Block Diagram
X+
CHARGE
AMPLIFIER
Y+
Z+
a
MUX
Routx
Voutx
Routy
Vouty
S/H
DEMUX
ZY-
S/H
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
1.2
Pin Description
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
Routz
X-
Voutz
S/H
REFERENCE
SELF TEST
Figure 2.
TRIMMING CIRCUIT
CLOCK
Pin Connection (top view)
DIRECTION OF THE
DETECTABLE
ACCELERATIONS
X
13
Y
1
Z
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
GND
NC
Vdd
Reserved
Vouty
Reserved
ST
Reserved
Voutx
Reserved
PD
Reserved
Voutz
FS
3/14
LIS3L02AS5
1 Block Diagram & Pins Description
Table 1.
Pin description
Pin #
Pin Name
Function
1 to 5
NC
6
GND
0V supply
7
Vdd
Power supply
8
Vouty
9
ST
10
Voutx
11
PD
12
Voutz
13
FS
14-15
Reserved
Leave unconnected or connect to Vdd
16
Reserved
Connect to Vdd or ground
17
Reserved
Leave unconnected or connect to Vdd
18
Reserved
Leave unconnected or connect to ground
19 to 24
NC
Internally not connected
Output Voltage
Self Test (Logic 0: normal mode; Logic 1: Self-test)
Output Voltage
Power Down (Logic 0: normal mode; Logic 1: Power-Down mode)
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
4/14
Output Voltage
Full Scale selection (Logic 0: 2g Full-scale; Logic 1: 6g Full-scale)
Internally not connected
LIS3L02AS5
2 Mechanical and Electrical Specifications
2
Mechanical and Electrical Specifications
2.1
Mechanical Characteristics.
Table 2.
Symbol
Mechanical Characteristics1
(Temperature range -40°C to +85°C) All the parameters specified @ Vdd = 5.0V,
T = 25°C unless otherwise noted
Parameter
Min.
Typ.2
FS pin connected to
GND
±1.8
±2.0
FS pin connected to
Vdd
±5.4
±6.0
Full-scale = 2g
Vdd/5–10%
Vdd/5
Vdd/5+10%
V/g
Full-scale = 6g
Vdd/15–10%
Vdd/15
Vdd/15+10%
V/g
Test Condition
Max.
Unit
g
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
Ar
So
Acceleration Range3
Sensitivity4
g
SoDr
Sensitivity Change Vs
Temperature
Delta from +25°C
Voff
Zero-g Level4
T = 25°C
Zero-g level Change Vs
Temperature
Delta from +25°C
±1.1
Best fit straight line
Full-scale = 2g
X, Y axis
±0.3
±1.5
% FS
Best fit straight line;
Full-scale = 2g
Z axis
±0.6
±2
% FS
±2
±4
%
OffDr
NL
Non Linearity5
±0.01
Vdd/2-10%
CrossAx Cross-Axis6
An
Vt
Fres
Acceleration Noise
Density
Self test Output Voltage
Change7,8,9
Vdd=5.0V;
Full-scale = 2g
Vdd/2
%/°C
Vdd/2+10%
V
mg/°C
µg/ Hz
50
T = 25°C
Vdd=5.0V
Full-scale = 2g
X axis
-70
-160
-320
mV
T = 25°C
Vdd=5.0V
Full-scale = 2g
Y axis
70
160
320
mV
T = 25°C
Vdd=5.0V
Full-scale = 2g
Z axis
-70
-130
-320
mV
Sensing Element
all axes
Resonance Frequency10
1.5
KHz
5/14
LIS3L02AS5
2 Mechanical and Electrical Specifications
Mechanical Characteristics1 (continued)
(Temperature range -40°C to +85°C) All the parameters specified @ Vdd = 5.0V,
T = 25°C unless otherwise noted
Table 2.
Symbol
Parameter
Top
Operating Temperature
Range
Wh
Product Weight
Test Condition
Typ.2
Min.
-40
Max.
Unit
+85
°C
0.6
gram
Note: 1 The product is factory calibrated at 5.0V. The device can be powered from 4.5V to 5.5V. Voff, So
and Vt parameters will vary with supply voltage.
2 Typical specifications are not guaranteed
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
2.2
Electrical Characteristics - O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
3 Verified by wafer level test and measurement of initial offset and sensitivity
4 Zero-g level and sensitivity are essentially ratiometric to supply voltage
5 Guaranteed by design
6 Contribution to the measuring output of an inclination/acceleration along any perpendicular axis
7 “Self test output voltage change” is defined as Vout(Vst=Logic1)-Vout(Vst=Logic0)
8 “Self test output voltage change” varies cubically with supply voltage
9 When full-scale is set to ±6g, “self-test output voltage change” is one third of the specified value.
10 Minimum resonance frequency Fres=1.5KHz. Sensor bandwidth=1/(2*π*110KΩ*Cload) with
Cload>1nF.
Table 3.
Symbol
Electrical Characteristics1
(Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =5.0V, T=25°C
unless otherwise noted
Parameter
Test Condition
Min.
Typ.2
Max.
Unit
4.5
5
5.5
V
Vdd
Supply Voltage
Idd
Supply Current
mean value
PD pin connected to GND
1.0
1.5
mA
Supply Current in Power
Down Mode
rms value
PD pin connected to Vdd
2.5
5
µA
IddPdn
Vst
Logic 0 level
0
0.8
V
Logic 1 level
3.6
Vdd
V
140
kΩ
Self Test Input
Rout
Output Impedance
80
Cload
Capacitive Load Drive3
320
Ton
Turn-On Time at exit from
Cload in µF
Power Down mode
110
pF
550*Cload+0.3
ms
Note: 1 The product is factory calibrated at 5.0V
2 Typical specifications are not guaranteed
3 Minimum resonance frequency Fres=1.5KHz. Sensor bandwidth=1/(2*π*110kΩ*Cload) with
Cload>1nF
6/14
LIS3L02AS5
2.3
2 Mechanical and Electrical Specifications
Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 4.
Absolute maximum ratings
Symbol
Ratings
Vdd
Supply voltage
Vin
Input Voltage on Any Control pin (FS, PD, ST)
Maximum Value
Unit
-0.3 to 7
V
-0.3 to Vdd +0.3
V
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
2.4
Terminology
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
3000g for 0.5 ms
APOW
Acceleration (Any axis, Powered, Vdd=5.0V)
AUNP
Acceleration (Any axis, Not powered)
TSTG
Storage Temperature Range
ESD
10000g for 0.1 ms
3000g for 0.5 ms
10000g for 0.1 ms
Electrostatic Discharge Protection
-40 to +125
°C
2 (HBM)
kV
200 (MM)
V
1500 (CDM)
V
This is a Mechanical Shock sensitive device, improper handling can cause
permanent damages to the part
This is an ESD sensitive device, improper handling can cause permanent damages
to the part
Sensitivity describes the gain of the sensor and can be determined by applying 1g
acceleration to it. As the sensor can measure DC accelerations this can be done easily by
pointing the axis of interest towards the center of the earth, note the output value, rotate the
sensor by 180 degrees (point to the sky) and note the output value again thus applying ±1g
acceleration to the sensor. Subtracting the larger output value from the smaller one and dividing
the result by 2 will give the actual sensitivity of the sensor. This value changes very little over
temperature (see sensitivity change vs. temperature) and also very little over time. The
Sensitivity Tolerance describes the range of Sensitivities of a large population of sensors.
Zero-g level describes the actual output signal if there is no acceleration present. A sensor in a
steady state on an horizontal surface will measure 0g in X axis and 0g in Y axis whereas the Z
axis will measure +1g. The output is ideally for a 5.0V powered sensor Vdd/2 = 2500mV. A
deviation from ideal 0-g level (2500mV in this case) is called Zero-g offset. Offset of precise
MEMS sensors is to some extend a result of stress to the sensor and therefore the offset can
slightly change after mounting the sensor onto a printed circuit board or exposing it to extensive
mechanical stress. Offset changes little over temperature - see “Zero-g Level Change vs.
Temperature”- the Zero-g level of an individual sensor is very stable over lifetime. The Zero-g
level tolerance describes the range of zero-g levels of a population of sensors.
7/14
2 Mechanical and Electrical Specifications
LIS3L02AS5
Self Test allows to test the mechanical and electric part of the sensor, allowing the seismic
mass to be moved by means of an electrostatic test-force. The Self Test function is off when the
ST pin is connected to GND. When the ST pin is tied at Vdd an actuation force is applied to the
sensor, simulating a definite input acceleration. In this case the sensor outputs will exhibit a
voltage change in their DC levels which is related to the selected full scale and depending on
the Supply Voltage through the device sensitivity. When ST is activated, the device output level
is given by the algebraic sum of the signals produced by the acceleration acting on the sensor
and by the electrostatic test-force. If the output signals change within the amplitude specified
inside Table 2, than the sensor is working properly and the parameters of the interface chip are
within the defined specification
Output impedance describes the resistor inside the output stage of each channel. This
resistor is part of a filter consisting of an external capacitor of at least 320pF and the internal
resistor. Due to the high resistor level only small, inexpensive external capacitors are needed to
generate low corner frequencies. When interfacing with an ADC it is important to use high input
impedance input circuitries to avoid measurement errors. Note that the minimum load
capacitance forms a corner frequency beyond the resonance frequency of the sensor. For a flat
frequency response a corner frequency well below the resonance frequency is recommended.
In general the smallest possible bandwidth for an particular application should be chosen to get
the best results.
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
8/14
LIS3L02AS5
3
3 Functionality
Functionality
The LIS3L02AS5 is a high performance, low-power, analog output three axes linear
accelerometer packaged in a SO24 package. The complete device includes a sensing element
and an IC interface able to take the information from the sensing element and to provide an
analog signal to the external world.
3.1
Sensing element
A proprietary process is used to create a surface micro-machined accelerometer. The
technology allows to carry out suspended silicon structures which are attached to the substrate
in a few points called anchors and are free to move in the direction of the sensed acceleration.
To be compatible with the traditional packaging techniques a cap is placed on top of the
sensing element to avoid blocking the moving parts during the moulding phase of the plastic
encapsulation.
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
3.2
IC Interface
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O3.3 Factory calibration
When an acceleration is applied to the sensor the proof mass displaces from its nominal
position, causing an imbalance in the capacitive half-bridge. This imbalance is measured using
charge integration in response to a voltage pulse applied to the sense capacitor.
At steady state the nominal value of the capacitors are few pF and when an acceleration is
applied the maximum variation of the capacitive load is up to 100fF.
In order to increase robustness and immunity against external disturbances the complete signal
processing chain uses a fully differential structure. The final stage converts the differential
signal into a single-ended one to be compatible with the external world.
The signals of the sensing element are multiplexed and fed into a low-noise capacitive charge
amplifier that implements a Correlated Double Sampling (CDS) at its output to cancel the offset
and the 1/f noise. The output signal is de-multiplexed and transferred to three different S&Hs,
one for each channel and made available to the outside.
The low noise input amplifier operates at 200 kHz while the three S&Hs operate at a sampling
frequency of 66 kHz. This allows a large oversampling ratio, which leads to in-band noise
reduction and to an accurate output waveform.
All the analog parameters (zero-g level, sensitivity and self-test) are ratiometric to the supply
voltage. Increasing or decreasing the supply voltage, the sensitivity and the offset will increase
or decrease almost linearly. The self test voltage change varies cubically with the supply
voltage.
The IC interface is factory calibrated for Sensitivity (So) and Zero-g Level (Voff). The trimming
values are stored inside the device by a non volatile structure. Any time the device is turned on,
the trimming parameters are downloaded into the registers to be employed during the normal
operation. This allows the user to employ the device without further calibration.
9/14
LIS3L02AS5
4 Application hints
4
Figure 3.
Application hints
LIS3L02AS5 Electrical Connection
Vdd
10µF
GND
DIRECTION OF THE
DETECTABLE
ACCELERATIONS
100nF
GND
GND
LIS3L02AS5
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
(top view)
X
13
GND
ST
Y
PD
FS
1
Optional
Vout Z
Z
Cload z
Optional
Vout X
Cload x
Optional
Cload y
Vout Y
Digital signals
Power supply decoupling capacitors (100nF ceramic or polyester + 10µF Aluminum) should be
placed as near as possible to the device (common design practice).
The LIS3L02AS5 allows to band limit Voutx, Vouty and Voutz through the use of external
capacitors. The re-commended frequency range spans from DC up to 1.5 KHz. In particular,
capacitors must be added at output pins to implement low-pass filtering for antialiasing and
noise reduction. The equation for the cut-off frequency (ft) of the external filters is:
1
f t = -----------------------------------------------------------------2π ⋅ R out ⋅ C load ( x, y, z )
Taking in account that the internal filtering resistor (Rout) has a nominal value equal to 110kΩ,
the equation for the external filter cut-off frequency may be simplified as follows:
1.45µF
f t = ------------------------------------- [ Hz ]
C load ( x, y, z )
The tolerance of the internal resistor can vary typically of ±20% within its nominal value of
110kΩ; thus the cut-off frequency will vary accordingly. A minimum capacitance of 320pF for
Cload(x, y, z) is required in any case.
10/14
LIS3L02AS5
4 Application hints
Table 5.
Filter Capacitor Selection, Cload (x,y,z).
Cut-off frequency
Capacitor value
1 Hz
1500 nF
10 Hz
150 nF
20 Hz
68 nF
50 Hz
30 nF
100 Hz
15 nF
200 Hz
6.8 nF
500 Hz
3 nF
)
s
(
t
4.1
Soldering information
c
u
d
o
)
r
s
(
P
t
c
e
4.2
Output response vs orientation
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
The SO24 package is lead free qualified for soldering heat resistance according to JEDEC JSTD-020C.
Figure 4.
Output response vs orientation
Top
Bottom
X=1.50V (-1g)
Y=2.50V (0 g)
Z=2.50V (0g)
X=2.50V (0g)
Y=3.50V (+1g)
Z=2.50V (0g)
TOP VIEW
X=2.50V (0g)
Y=2.50V (0g)
Z=1.50V (-1g)
Top
Bottom
X=2.50V (0g)
Y=2.50V (0g)
Z=3.50V (+1g)
X=2.50V (0g)
Y=1.50V (-1g)
Z=2.50V (0g)
X=3.50V (+1g)
Y=2.50V (0g)
Z=2.50V (0g)
Earth’s Surface
Figure 4 refers to LIS3L02AS5 device powered at 5.0V
11/14
LIS3L02AS5
5 Package Information
5
Package Information
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages.
These packages have a Lead-free second level interconnect. The category of second Level
Interconnect is marked on the package and on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Figure 5.
SO24 Mechanical Data & Package Dimensions
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
mm
inch
DIM.
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.35
2.65
0.093
0.104
A1
0.10
0.30
0.004
0.012
B
0.33
0.51
0.013
0.200
C
0.23
0.32
0.009
0.013
D (1)
15.20
15.60
0.598
0.614
E
7.40
7.60
0.291
0.299
e
1.27
10.0
10.65
0.394
0.419
h
0.25
0.75
0.010
0.030
L
0.40
1.27
0.016
0.050
ddd
Weight: 0.60gr
0.050
H
k
OUTLINE AND
MECHANICAL DATA
0˚ (min.), 8˚ (max.)
0.10
0.004
(1) “D” dimension does not include mold flash, protusions or gate
burrs. Mold flash, protusions or gate burrs shall not exceed
0.15mm per side.
SO24
0070769 C
12/14
LIS3L02AS5
6
6 Revision history
Revision history
Date
Revision
1-Dec-2005
1
Changes
Initial release.
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
13/14
LIS3L02AS5
)
s
(
t
c
u
d
o
)
r
s
(
P
t
c
e
t
u
e
d
l
o
o
r
s
P
b
e
O
t
e
l
)
o
s
(
s
t
b
c
u
O
d
o
)
r
s
P
(
t
c
e
t
u
e
l
d
o
o
r
s
P
b
O
e
t
e
l
o
s
b
O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14
工商网监
湘ICP备2023018690号
