EMIF06-HSD03F3

EMIF06-HSD03F3 EMI filter with integrated ESD protection for micro-SD Card™ Datasheet  production data Features  Very low line capacitance to compensate long PCB tracks (2.5 pF typ.)  High efficiency in ESD suppression up to 18 kV (IEC 61000-4-2)  Very low PCB space consumption: – 1.1 x 2.4 mm  Ultralow leakage current: 20 nA max.  Very thin package: 0.605 mm Flip-Chip package (17 bumps)  Smart pinout for easier PCB layout Figure 1. Pin configuration (bump side)  High reduction of parasitic elements through integration and wafer level packaging  Lead-free package 2 ,  Complies with the following standards: – IEC 61000-4-2 level 4:±15 kV (air discharge), ±8 kV (contact discharge) 9FF 2 , *1' , 2 Application *1' , 2  SD3.0, UHS-1 SDR104 (208 MHz) 2 Description 2 The EMIF06-HSD03F3 chip is a highly integrated device designed to suppress EMI/RFI noise for interface line filtering. *1' , '(7 , Figure 2. Functional schematic L = 1 nH R = 1 Ω Ox Ix CLINE = 2.5 pF DET October 2016 This is information on a product in full production. The EMIF06-HSD03F3 Flip-Chip packaging means the package size is equal to the die size. That’s why EMIF06-HSD03F3 is a very small device. Additionally, this filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 18 kV. VCC DocID025248 Rev 4 1/10 www.st.com 10 Application diagram 1 EMIF06-HSD03F3 Application diagram Figure 3. Schema Vcc Top layer Second layer DAT2 DAT3 CMD VCC CLK GND DAT0 DAT1 O1 I1 Vcc O2 I2 GND I3 O3 GND CPU O4 I4 GND µSD card contacts face down I5 O5 DET I6 O6 µSD card contacts spring DET Maximum distance = 50 mm 2/10 DocID025248 Rev 4 EMIF06-HSD03F3 2 Characteristics Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol VPP Tj Parameter Value ESD discharge IEC 61000-4-2, level 4 for Ix pins: Air discharge Contact discharge ESD discharge IEC 61000-4-2, level 1 for Ox pins: Air discharge Contact discharge Unit 18 18 kV 10 10 Maximum junction temperature 125 °C TOP Operating temperature range - 30 to + 85 °C Tstg Storage temperature range - 55 to +150 °C Figure 4. Electrical characteristics (definitions) I IF Symbol VBR = IRM = VRM = VCL = IPP = Rd = Cline = RI/O = Parameter Breakdown voltage Leakage current at VRM Stand-off voltage Clamping voltage Peak pulse current VF VCL VBR VRM IRM V Dynamic resistance Line capacitance Series resistance between input and ouptput DocID025248 Rev 4 Slope: 1/Rd IPP 3/10 Characteristics EMIF06-HSD03F3 Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Test conditions VBR Data lines, IR = 1 mA IRM VRM = 3 V per line Min. 5 Vline = 0 V, Vosc = 30 mV, F = 1 MHz 2.5 L Rd Max. Unit 9 V 20 nA Ω 1 RI/O Cline Typ. 3 1 Dynamics resistance, tP = 100 ns IO-GND (positive polarity) 650 GND-IO (negative polarity) 320 pF nH mΩ VCC VBR IR = 1 mA IRM VRM = 3 V Cline Vline = 0 V, Vosc = 30 mV, F = 1 MHz 5 9 V 20 nA 40 pF DET VBR IR = 1 mA IRM VRM = 3 V Cline Vline = 0 V, Vosc = 30 mV, F = 1 MHz 4/10 5 40 DocID025248 Rev 4 9 V 20 nA pF EMIF06-HSD03F3 Characteristics Figure 5. Attenuation versus frequency IX, OX 0.00 - 1.00 - 2.00 - 3.00 - 4.00 - 5.00 - 6.00 - 7.00 - 8.00 - 9.00 -10.00 Figure 6. Attenuation versus frequency VCC, DET S21(dB) S21(dB) 0.00 -7.50 -15.00 -22.50 F(Hz) 100.0 k 1.0 M I6 I3 10.0 M 100.0 M 1.0 G F(Hz) -30.00 100.0k I4 I5 I2 I1 Figure 7. ESD response to IEC 61000-4-2 (+8 kV contact discharge) 1.0M 10.0M VCC 100.0M 1.0G DET Figure 8. ESD response to IEC 61000-4-2 (-8 kV contact discharge) 10.0 V / Div 20.0 V / Div 1 109.6 V 1 VCL: Peak clamping voltage 2 VCL :clamping voltage @ 30 ns 3 VCL :clamping voltage @ 60 ns 4 VCL :clamping voltage @ 100 ns 2 19.2 V 3 13.9 V 3 -4.1 V 4 -2.4 V 1 VCL: Peak clamping voltage 2 VCL :clamping voltage @ 30 ns 3 VCL :clamping voltage @ 60 ns 4 VCL :clamping voltage @ 100 ns 4 6.6 V 1 -61.1 V 20 ns / Div Figure 9. Digital crosstalk I1-O2 20 ns / Div Figure 10. Analog crosstalk versus frequency 1.0 V / Div P4: pkpk(C2) 1.28 ns P1: top(C1) 3.01 ns P2:rise(C1) 1.99 ns 2 -5.1 V P3: fall(C1) 1.93 ns 10 ns / Div 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 -80.00 -90.00 -100.00 -110.00 XTalk(dB) F(Hz) 100.0 k I1-O2 DocID025248 Rev 4 1.0 M 10.0 M I2-O3 100.0 M 1.0 G VCC- Clk 5/10 Characteristics EMIF06-HSD03F3 Figure 11. TLP measurement 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 IPP(A) Positive polarity Negative polarity Poly. (Positive polarity) Poly. (Negative polarity) 0 5 10 15 20 y = 0.0961x 2 + 2.1437x - 4.7641 R2 = 0.9935 6/10 tP=100ns TJ initial=25°C V CL (V) DocID025248 Rev 4 25 30 35 y = -0.0078x 2 + 2.1203x - 13.887 R2 = 0.9956 40 EMIF06-HSD03F3 3 Package information Package information  Epoxy meets UL94, V0  Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 3.1 Flip-Chip package information Figure 12. Flip-Chip package dimensions 605 ± 60 µm 1.10 mm ± 40 µm 400 ± 40 µm 2.40 mm ± 40 µm 0 40 ± 40 µm DocID025248 Rev 4 7/10 Package information EMIF06-HSD03F3 Figure 13. Footprint recommendations Figure 14. Marking Dot, ST logo Copper pad Diameter: 220 µm recommended 260 µm maximum ECOPACK® grade xx = marking z = manufacturing location yww = datecode (y = year ww = week) Solder mask opening: 300 µm minimum Solder stencil opening: 220 µm recommended x x z y ww 'RWLGHQWLI\LQJ3LQ 2ORFDWLRQ ‘“ “ “ “  “  “ “ Figure 15. Tape and reel specification 67 67 67 [[] \ZZ [[] \ZZ [[] \ZZ  “ “ “ Note: More information is available in the application notes: AN2348, “IPAD™ 400 µm Flip Chip: package description and recommendations for use” AN1751, “EMI filters: recommendations and measurements” AN4541: “EMI Filters for SD3.0 card: High speed SD card protection and filtering devices” 8/10 DocID025248 Rev 4 EMIF06-HSD03F3 4 Ordering information Ordering information Figure 16. Ordering information scheme EMIF 06 - HSD 03 F3 EMI Filter Number of lines Application HSD = High speed SD card Version Version = 3 Package F = Flip Chip x = 3: Lead-free, pitch = 400 µm, bump = 255 µm Table 3. Ordering information 5 Order code Marking Package Weight Base qty Delivery mode EMIF06-HSD03F3 KK Flip Chip 3.4 mg 5000 Tape and reel (7”) Revision history Table 4. Document revision history Date Revision 19-Nov-2013 1 Initial release 09-Jan-2014 2 Corrected typographical error. 06-Jan-2015 3 Added mention for new AN4541. 06-Oct-2016 Changes Updated Figure 1. DocID025248 Rev 4 9/10 EMIF06-HSD03F3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 10/10 DocID025248 Rev 4