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ESDA14V2-4BF

ESDA14V2-4BF

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    ESDA14V2-4BF - Quad bidirectional Transi array for ESD protection - STMicroelectronics

  • 数据手册
  • 价格&库存
ESDA14V2-4BF 数据手册
ESDA14V2-4BF2 Quad bidirectional Transil™ array for ESD protection Features ■ ■ ■ ■ ■ 4 Bidirectional Transil functions ESD Protection: IEC 61000-4-2 level 4 Stand off voltage: 12 V Min. Low leakage current < 1 µA 50 W Peak pulse power (8/20 µs) Flip Chip (5 bumps) Figure 1. Device configuration A1 A3 C1 C3 Benefits ■ ■ ■ High ESD protection level High integration Suitable for high density boards Complies with the following standards ■ IEC 61000-4-2 – 15 kV (air discharge) – 8 kV (contact discharge) MIL STD 883F- Method 3015-7: class3 – 25 kV (human body model) Figure 2. GND ■ Pin configuration (bump side) 3 2 1 A B C Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as : ■ ■ ■ ■ Computers Printers Communication systems and cellular phones Video equipment Description The ESDA14V2-4BF2 is a monolithic array designed to protect up to 4 lines (bidirectional) against ESD transients. This device is particularly adapted to the protection of symmetrical signals. The device is ideal for situations where board space saving is requested. TM: Transil is a trademark of STMicroelectronics. April 2008 Rev 4 1/8 www.st.com 8 Characteristics ESDA14V2-4BF2 1 Characteristics Table 1. Symbol Absolute ratings (limiting values) Parameter MIL STD 883E - Method 3015-7 IEC61000-4-2 air discharge IEC61000-4-2 contact discharge Value ± 25 ± 15 ±8 50 125 -55 to +150 260 -40 to +125 Unit VPP PPP Tj Tstg TL Top ESD discharge Peak pulse power (8/20 µs) Junction temperature Storage temperature range kV W °C °C °C °C Lead solder temperature (10 seconds duration) Operating temperature range Table 2. Symbol VRM VBR VCL IRM IPP C Rd Electrical characteristics (Tamb = 25 °C) Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Capacitance Dynamic resistance VBR @ IR IRM @ VRM max. V 18 mA 1 max. µA 1 0.1 V 12 3 Rd typ.(1) Ω 3.2 αT max.(2) 10-4/C 10 C typ. 0 V bias pF 15 Slope: 1 / Rd IPP VCL VBR VRM I V Types min. V ESDA6V1SC5 14.2 1. Square pulse, Ipp = 3 A, tp = 2.5 µs. 2. Δ VBR = αT* (Tamb -25 °C) * VBR (25 °C) 2/8 ESDA14V2-4BF2 Characteristics Figure 3. Clamping voltage versus peak Figure 4. pulse current (Tj initial = 25 °C) (Rectangular waveform, tp = 2.5 µs) C(pF) 14 Capacitance versus reverse applied voltage (typical values) IPP(A) 10.0 tp = 2.5µs 12 10 8 1.0 6 4 2 F=1MHz VOSC=30mVRMS Tj=25°C VCL(V) 0.1 0 10 20 30 40 50 60 0 0 2 4 6 VR(V) 8 10 12 14 Figure 5. Relative variation of leakage current versus junction temperature (typical values) Figure 6. ESD response to IEC 61000-4-2 (+15 kV air discharge) IR[Tj] / IR[Tj=25°C] 1000 100 V(i/o) 10 Tj(°C) 1 25 50 75 100 125 Figure 7. ESD response to IEC 61000-4-2 (-15 kV air discharge) Figure 8. Analog crosstalk Typical crosstalk response of ESDA14V2-4BF1 (A1/A3 line) 0.00 -10.00 -20.00 -30.00 V(i/o) -40.00 -50.00 -60.00 -70.00 -80.00 -90.00 -100.0 100.0k 1.0M 10.0M 100.0M 1.0G f/Hz 3/8 Application information Figure 9. Digital crosstalk rise time: t10-90% = 3ns ESDA14V2-4BF2 VG1 VIN = A1 V = 0-3V F = 5MHz β21VG1 VOUT = C3 2 Application information Figure 10. Application example A1 A3 Connector C1 C3 IC to be protected B2 Figure 11. Aplac model A1 1.2pF 100m 1.2pF 100m A3 1.2pF 100m C1 C3 1.2pF 100m D02_r BV = 16 IBV = 1m CJO = 200p M = 0.3333 RS = 1 VJ = 0.6 TT = 100n D02_r D02_f BV = 16 IBV = 1m CJO = 10.4p M = 0.3333 RS = 2 VJ = 0.6 TT = 100n B2 B2 50pH 50m 160pH 1.8 4/8 ESDA14V2-4BF2 Ordering information scheme 3 Ordering information scheme Figure 12. Ordering information scheme ESDA ESD Array Breakdown Voltage 14V2 = 14.2 Volts min. Number of line 4 = 4 lines Type B = Bidirectional Package F = Flip Chip x = 2: Lead-free, pitch = 500 µm, bump = 315 µm 14V2 - 4 B Fx 4 Package information In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Figure 13. Flip Chip package mechanical data 700µm ± 50 315µm ± 50 650µm ± 65 1.12 mm ± 50µm 210 µm 210 µm 1.12 mm ± 50µm 49 5 µm ± 40 5/8 Package information ESDA14V2-4BF2 Figure 14. Foot print recommendations Figure 15. Marking Dot, ST logo xx = marking z = manufacturing location yww = datecode (y = year ww = week) Copper pad Diameter: 250 µm recommended, 300 µm max E Solder stencil opening: 330 µm Solder mask opening recommendation: 340 µm min for 315 µm copper pad diameter xxz y ww Figure 16. Flip Chip tape and reel specification Dot identifying Pin A1 location 4 ± 0.1 Ø 1.5 ± 0.1 1.75 ± 0.1 3.5 ± 0.1 1.22 0.73 ± 0.05 All dimensions in mm 8 ± 0.3 ST E ST E ST E xxz yww User direction of unreeling xxz yww xxz yww 4 ± 0.1 1.22 6/8 ESDA14V2-4BF2 Ordering information 5 Ordering information Table 3. Ordering information Marking EA Package Flip Chip Weight 2.1 mg Base qty 5000 Delivery mode Tape and reel 7” Order code ESDA14V2-4BF2 Note: More information is available in the application notes: AN1235:"Flip Chip: Package description and recommendations for use" AN1751: “EMI filters: Recommendations and measurements” 6 Revision history Table 4. Date 14-Mar-2005 18-Oct-2005 04-Jun-2007 16-Apr-2008 Document revision history Revision 1 2 3 4 First issue. Dimension from center bump to corner bump changed in Figure 16. to indicate diagonal instead of perpendicular measurement. No values changed. ECOPACK statement added. Reformatted to current standard. Updated ECOPACK statement. Updated Figure 12, Figure 13 and Figure 16. Reformatted to current standards. Description of changes 7/8 ESDA14V2-4BF2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8
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