ESDALC20-1BF4

ESDALC20-1BF4 Datasheet Ultra low capacitance single line ESD protection Features 0201 package • +/- 20V VRM • Low VBR/VCL ratio • • • • • • Bidirectional protection Low leakage current < 1 nA typ. Ultra low PCB area: 0.18 mm² 0201 package ECOPACK2 compliant component Exceeds IEC 61000-4-2 level 4 standard: – ±30 kV (air discharge) – ±20 kV (contact discharge) Application Where transient over voltage protection in ESD sensitive equipment is required, such as: • Smartphones, mobile phones and accessories • Tablets and notebooks • Portable multimedia devices and accessories • Digital cameras and camcorders • Communication and highly integrated systems Product status Internal Description The ESDALC20-1BF4 is a bidirectional single line TVS diode designed to protect the data line or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. DS11117 - Rev 3 - June 2022 For further information contact your local STMicroelectronics sales office. www.st.com ESDALC20-1BF4 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value IEC 61000-4-2 contact discharge ±20 IEC 61000-4-2 air discharge ±30 Unit Vpp Peak pulse voltage Ppp Peak pulse power (8/20 μs) 90 W Ipp Peak pulse current (8/20 μs) 2.4 A Tj Operating junction temperature range -40 to 150 Storage junction temperature range -65 to 150 Tstg TL Maximum lead temperature for soldering during 10 s kV °C 260 Figure 1. Electrical characteristics (definitions) Ipp Symbol VBR = Parameter Breakdown voltage IR = Breakdown current VCL IRM VRM IPP = = = = Clamping voltage Leakage current at V RM Stand-off voltage Peak pulse current RD = Dynamic resistance I V Table 2. Electrical characteristics (values) (Tamb = 25° C) Symbol Test condition Min. Typ. VRM Stand-off voltage VBR Breakdown voltage IR = 1 mA IRM Leakage current VRM = 20 V