ESDARF03-1BF3

ESDARF03-1BF3 Ultralow capacitance ESD protection for antenna Features ■ ultralow diode capacitance 0.6 pF ■ Single line, protected against 15 kV ESD ■ breakdown voltage VBR = 6.0 V min. ■ Flip Chip 400 µm pitch, lead-free ■ very low leakage current ■ very small PCB area ■ RoHS compliant Flip Chip (4 bumps) Figure 1. Pin layout (bump side) Benefits ■ minimized impact on rise and fall times for maximum data integrity ■ low PCB space occupation ■ higher reliability through monolithic integration A B 1 2 Complies with the following standards ■ ■ IEC 61000-4-2 level 4: – 15 kV (air discharge) – 8 kV (contact discharge) Figure 2. Device configuration A1 (RFIN) B1 (NC) MIL STD 883G - Method 3015.7: – 25 kV (human body model) Applications ■ antenna protection ■ DVB - H ■ GPS B1 A1 B2 A2 50 Ω line Top view A2 (GND) B2 (NC) Description The ESDARF03-1BF3 is a monolithic, application specific discrete device dedicated to ESD protection of antennas. Note: Bumps B1 and B2 must be connected together on the PCB. Its ultralow line capacitance secures a high level of signal integrity without compromising the protection of sensitive chips against the most stringently characterized ESD strikes. TM: IPAD is a trademark of STMicroelectronics. November 2010 Doc ID 16078 Rev 1 1/7 www.st.com 7 Characteristics 1 ESDARF03-1BF3 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Unit VPP ESD discharge IEC 61000-4-2, air discharge ESD discharge IEC 61000-4-2, contact discharge 15 8 kV PPP Peak pulse power dissipation (8/20 µs) 60 W Maximum junction temperature 125 °C Tj Top Operating temperature range -30 to + 85 °C Tstg Storage temperature range -55 to +150 °C Figure 3. Symbol VBR = IRM = VRM = VCL = Rd = Ipp = αT = VF = Table 2. Electrical characteristics (definitions) Parameter Breakdown voltage Leakage current @ VRM Stand-off voltage Clamping voltage Dynamic impedance Peak pulse current Voltage temperature coefficient Line capacitance Electrical characteristics (Tamb = 25 °C) Symbol Test conditions VBR IR = 1 mA IRM VRM = 3 V Rd Exponential wave form 8/20 µs, Ipp = 1 to 5 A αT Cline 2/7 Value Min. Typ. 6 9 Max. V 100 5 VLINE = 0 V, VOSC = 30 mV, F = 1 MHz Doc ID 16078 Rev 1 0.6 nA Ω 2.6 IR = 1 mA Unit 0.8 10-4/ pF °C ESDARF03-1BF3 Figure 4. Characteristics ESD response to IEC 61000-4-2 (+8 kV contact discharge) Figure 5. ESD response to IEC 61000-4-2 (-8 kV contact discharge) X: 20 ns/division Y: 50 V/division X: 20 ns/division Y: 50 V/division Figure 6. 0.6 Junction capacitance versus frequency (typical values) Figure 7. dB 0 -1 -2 -3 Frequency IL -4 1.45GHz -5 0.15dB 1.492GHz -6