ESDAVLC5-4BX4

ESDAVLC5-4BX4 4-line bidirectional Transil™, transient surge voltage suppressor for ESD protection Datasheet − production data Features 2 1 • 4 bidirectional Transil diodes • Breakdown voltage VBR = 5.5 V min. • Low leakage current: < 50 nA GND • Very small PCB area: 0.64 mm2 • Lead-free and RoHS compliant 3 4 Complies with the following standards • IEC 61000-4-2 level 4: – ±15 kV (air discharge) – ±8 kV (contact discharge) 4-lead micro package Figure 1. Functional diagram IO1 IO2 IO3 IO4 Applications Where transient over voltage protection in ESD sensitive equipment is required, such as: • Mobile phones • Portable multimedia devices and accessories • Computers, tablets and peripherals • Set top boxes • Audio equipment GND Description The ESDAVLC5-4BX4 is monolithic array designed to protect up to 4 bidirectional lines against ESD transients. The device is ideal for applications where both reduced printed circuit board space and high ESD protection level are required. TM: Transil is a trademark of STMicroelectronics June 2014 This is information on a product in full production. DocID023365 Rev 2 1/8 www.st.com Characteristics 1 ESDAVLC5-4BX4 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol VPP (1) Parameter Value Unit 16 16 kV IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge Peak pulse voltage IPP Peak pulse current (8/20 µs) 2 A PPP Peak pulse power (8/20 µs) 30 W -30 to +85 °C - 55 to +150 °C 260 °C Tj Operating temperature range Tstg Storage temperature range TL Maximum lead temperature for soldering during 10 s 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol VBR VRM VCL IRM IPP = = = = = RD = CLINE = Parameter Breakdown voltage Stand-off voltage Clamping voltage Leakage current @ VRM Peak pulse current VCL VBR VRM IRM Dynamic resistance Line capacitance Slope: 1/Rd V VRM VBR VCL IPP Table 2. Electrical characteristics (values, Tamb = 25 °C) Value Symbol Parameter Min. Typ. Max. VBR Breakdown voltage IR = 1 mA IRM Leakage current VRM = 3 V 50 nA VCL Clamping voltage IPP = 1 A, 8/20 µs 18 V Cline Line capacitance, I/O to GND VR = 0 V, Fosc = 1 MHz, Vosc = 30 mV 10 pF Rd 2/8 Unit Test conditions 5.5 V I/O to GND 0.53 GND to I/O 0.37 Dynamic resistance, pulse width 100 ns DocID023365 Rev 2 Ω ESDAVLC5-4BX4 Characteristics Figure 3. Leakage current versus junction temperature (typical values) 10 Figure 4. Junction capacitance versus reverse applied voltage (typical values) IR (nA) C (pF) 12 11 10 9 8 7 6 5 4 3 2 1 0 0.00 IO/GND 1 0.1 Tj (°C) 0.01 25 50 75 100 125 Tj = 25 °C IO/GND VR (V) 2.00 4.00 6.00 8.00 10.00 12.00 14.00 150 Figure 5. ESD response to IEC 61000-4-2 (typical values, +8 kV contact discharge) Figure 6. ESD response to IEC 61000-4-2 (typical values, -8 kV contact discharge) 10 V/div 10 V/div 1 VPP: ESD peak voltage 2 VCL :clamping voltage @ 30 ns 3 VCL :clamping voltage @ 60 ns 4 VCL :clamping voltage @ 100 ns 1 56 V 2 22 V 4 -10 V 3 -15 V 2 -15 V 3 21 V 4 15 V 1 VPP: ESD peak voltage 2 VCL :clamping voltage @ 30 ns 3 VCL :clamping voltage @ 60 ns 4 VCL :clamping voltage @ 100 ns 1 -48 V 20 ns/div 20 ns/div Figure 7. S21 attenuation measurement Figure 8. TLP measurement IPP (A) S21 (dB) 0 -3 -6 -9 -12 -15 -18 F (Hz) -21 100k 1M 10M IO1 IO3 100M 1G IO2 IO4 10G 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 GND to I/O I/O to GND VCL (V) 0 DocID023365 Rev 2 5 10 15 20 25 30 35 40 3/8 8 Package information 2 ESDAVLC5-4BX4 Package information • Epoxy meets UL94, V0 • Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 9. Micro package dimensions 200 ±16 µm 200 ±16 µm 0 25 800 ±30 µm 25 0 20 0 ±1 6 ±1 6 µm µm Thickness: 350 ±30 µm 6 ±1 µm 706 ±16 µm 800 ±30 µm Figure 10. Marking EXJ YWW Note: 4/8 The marking codes can be rotated by 90° or 180° to differentiate assembly location. In no case should this product marking be used to orient the component for its placement on a PCB. Only pin 1 mark is to be used for this purpose. DocID023365 Rev 2 ESDAVLC5-4BX4 Package information Figure 11. Tape and reel specification Dot identifying Pin A1 location 2.0 Ø 1.55 4.0 3.5 EXj yww EXj yww EXj yww 0.88 EXj yww EXj yww EXj yww EXj yww 8.0 0.88 1.75 0.22 2.0 0.43 All dimensions are typical values in mm User direction of unreeling DocID023365 Rev 2 5/8 8 Recommendation on PCB assembly ESDAVLC5-4BX4 3 Recommendation on PCB assembly 3.1 PCB design recommendations 3.2 • PCB pad design: Non solder mask defined • PCB pad size: see Figure 12. • Solder mask opening: 50 µm between the edge of the pad and the edge of the solder mask Stencil recommendations • Stencil aperture: see Figure 12. • Stencil thickness: 75 µm 0. 0 5 Figure 12. Micro package footprint and stencil (dimensions in mm) 5 1 0. 0. 25 20 0. Stencil opening Solder mask opening Copper pad dimensions 0. 25 25 0. 3.3 Solder paste recommendations Near eutectic 95.8% Sn, 3.5% Ag, 0.7% Cu solder paste, Type 4. 6/8 DocID023365 Rev 2 ESDAVLC5-4BX4 4 Ordering information Ordering information Figure 13. Ordering information scheme ESDA VLC 5 - 4 B X4 ESD array Very low capacitance Breakdown voltage 5 = 5.5 V min. Number of lines Directional B = bidirectional Package X4 = 4 lead micro package Table 3. Ordering information Order code Marking Weight Base qty Delivery mode ESDAVLC5-4BX4 EX(1) 0.504 mg 10 000 Tape and reel 1. The marking codes can be rotated by multiples of 90° to differentiate assembly location 5 Revision history Table 4. Document revision history Date Revision Changes 18-Sep-2012 1 First issue 05-Jun-2014 2 Updated values for dynamic resistance in Table 2 and added Figure 8. DocID023365 Rev 2 7/8 8 ESDAVLC5-4BX4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 DocID023365 Rev 2