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ESDAXXSCX

ESDAXXSCX

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    ESDAXXSCX - QUAD TRANSIL™ ARRAY FOR ESD PROTECTION - STMicroelectronics

  • 数据手册
  • 价格&库存
ESDAXXSCX 数据手册
® ESDAxxSCx QUAD TRANSIL™ ARRAY FOR ESD PROTECTION ASD™ MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as: ■ ■ ■ ■ ■ ■ Computers Printers Communication systems Cellular phone handsets and accessories Other telephone set Set top boxes SOT23-5L (SC-59) ESDAxxSC5 Table 1: Order Code Part Number ESDAxxSCx SOT23-6L (SC-59) ESDAxxSC6 FEATURES ■ 4 Unidirectional Transil™ Functions ■ Low leakage current: IR max. < 20 mA at VBR ■ 400 W Peak pulse power (8/20 µs) Marking See page 9 DESCRIPTION The ESDAxxSC5 and ESDAxxSC6 are monolithic voltage suppressors designed to protect components which are connected to data and transmission lines against ESD. They clamp the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transient. BENEFITS ■ High ESD protection level: up to 25 kV ■ High integration ■ Suitable for high density boards COMPLIES WITH THE FOLLOWING STANDARDS: ■ Figure 1: ESDAxxSC5 Functional Diagram 1 2 3 5 4 Figure 2: ESDAxxSC6 Functional Diagram IEC61000-4-2 level 4: 15kV (air discharge) 8kV (contact discharge) MIL STD 883E-Method 3015-7: class3B (Human Body Model) 1 2 3 6 5 4 ■ TM: ASD is a trademark of STMicroelectronics. November 2004 REV. 8 1/10 ESDAxxSCx Table 2: Absolute Ratings (Tamb = 25°C) Symbol VPP ESD discharge Parameter MIL STD 883E - Method 3015-7 IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ESDA5V3SCx ESDA6V1SCx PPP Peak pulse power (8/20µs) ESDA14V2SCx ESDA17SC6 ESDA19SC6 ESDA25SC6 Value 25 500 400 300 150 -55 to +150 260 -40 to +125 Unit kV W W °C °C °C °C Tj Tstg TL Top Junction temperature Storage temperature range Maximum lead temperature for soldering during 10 s at 5mm for case Operating temperature range Table 3: Electrical Characteristics (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP αT VF C Rd Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current Peak pulse current Voltage temperature coefficient Forward voltage drop Capacitance Dynamic resistance VBR @ Types min. V ESDA5V3SC5 ESDA5V3SC6 ESDA6V1SC5 ESDA6V1SC6 ESDA14V2SC5 ESDA14V2SC6 ESDA17SC6 ESDA19SC6 ESDA25SC6 5.3 6.1 14.2 17 19 25 max. V 5.9 7.2 15.8 19 21 30 mA 1 1 1 1 1 1 IR IRM @ VRM max. mA 2 20 5 0.075 0.1 1 V 3 5.25 12 14 15 24 Rd typ. note 1 mΩ 230 350 650 700 800 1000 αT max. 10-4/°C 5 6 10 10 8.5 10 Rd I IF VBR VCL V RM VF I RM V I PP C typ. pF 280 190 100 85 80 60 VF @ IF max. V 1.25 1.25 1.25 1.2 1.2 1.2 mA 200 200 200 10 10 10 note 2 0V bias Note 1: Square pulse, IPP = 15A, tp=2.5µs. Note 2: ∆ VBR = αT* (Tamb -25°C) * VBR (25°C). 2/10 ESDAxxSCx 1. CALCULATION OF THE CLAMPING VOLTAGE USE OF THE DYNAMIC RESISTANCE The ESDA family has been designed to clamp fast spikes like ESD. Generally the PCB designers need to calculate easily the clamping voltage VCL. This is why we give the dynamic resistance in addition to the classical parameters. The voltage across the protection cell can be calculated with the following formula: VCL = VBR + Rd IPP Where IPP is the peak current through the ESDA cell. As the value of the dynamic resistance remains stable for a surge duration lower than 20ms, the 2.5ms rectangular surge is well adapted. In addition both rise and fall times are optimized to avoid any parasitic phenomenon during the measurement of Rd. 2. DYNAMIC RESISTANCE MEASUREMENT The short duration of the ESD has led us to prefer a more adapted test wave, as below defined, to the classical 8/20µs and 10/1000µs surges. Figure 3: 2.5µs duration measurement wave I Ipp 2µs tp = 2.5µs t Figure 4: Peak power dissipation versus initial junction temperature PPP[Tj initial] / PPP[Tj initial=25°C] 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Figure 5: Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) PPP(W) 5000 ESDA5V3SC5/SC6 & ESDA6V1SC5/SC6 1000 ESDA14V2SC5/SC6 ESDA17SC6 ESDA19SC6 ESDA25SC6 Tj initial (°C) 100 1 tp(µs) 10 100 ® 3/10 ESDAxxSCx Figure 6: Clamping voltage versus peak pulse current (Tj initial = 25 °C). Rectangular waveform (tp = 2.5 ms) IPP(A) 50.0 ESDA25SC6 ESDA19SC6 Figure 7: Capacitance versus reverse applied voltage (typical values) C(pF) 500 F=1MHz VOSC=30mVRMS ESDA5V3SC5/SC6 10.0 ESDA17SC6 ESDA14V2SC5/SC6 ESDA6V1SC5/SC6 100 ESDA6V1SC5/SC6 1.0 ESDA5V3SC5/SC6 ESDA14V2SC5/SC6 ESDA17SC6 ESDA19SC6 VCL(V) 0.1 0 5 10 15 20 25 30 35 40 45 50 55 60 65 tp=2.5µs 10 70 75 80 VR(V) 1 2 5 10 20 ESDA25SC6 50 Figure 8: Relative variation of leakage current versus junction temperature (typical values) IR[Tj] / IR[Tj=25°C] 500 ESDA17SC6 & ESDA19SC6 Figure 9: Peak forward voltage drop versus peak forward current (typical values) IFM(A) ESDA5V3SC5/SC6 ESDA14V2SC5/SC6 & ESDA6V1SC5/SC6 ESDA19SC6 ESDA17SC6 5.00 100 ESDA14V2SC5/SC6 & ESDA6V1SC5/SC6 1.00 ESDA25SC6 ESDA25SC6 10 0.10 Tj(°C) 1 25 50 75 ESDA5V3SC5/SC6 Tj = 25°C VFM(V) 0.01 100 125 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3. ESD PROTECTION BY ESDAxxSCx Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient overvoltage to a low enough level such that damage to the protected semiconductor is prevented. Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel protection elements, connected between the signal line and ground. As the transient rises above the operating voltage of the device, the TVS array becomes a low impedance path diverting the transient current to ground. 4/10 ESDAxxSCx Figure 10: ESDAxxSCx array protection against ESD I/ O LINES ESD sensitive device GND ESDAxxxSC6 (1connection to GND for ESDAxxSC5) The ESDAxxSCx array is the ideal board level protection of ESD sensitive semiconductor components. The tiny SOT23-5L and SOT23-6L packages allow design flexibility in the high density boards where the space saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD. 4. ADVICE FOR OPTIMIZING CIRCUIT BOARD LAYOUT Circuit board layout is a critical design step in the suppression of ESD induced transients. The following guidelines are recommended: ■ ■ ■ ■ ■ The ESDAxxSC5/6 should be placed as close as possible to the input terminals or connectors. The path length between the ESD suppressor and the protected line should be minimized All conductive loops, including power and ground loops should be minimized The ESD transient return path to ground should be kept as short as possible Ground planes should be used whenever possible 5. TECHNICAL INFORMATION ESD protection The ESDA19SC6 is particularly optimized to perform ESD protection. ESD protection is achieved by clamping the unwanted overvoltage. The clamping voltage is given by the following formula : VCL = VBR + Rd . IPP As shown in figure 11, the ESD strikes are clamped by the transient voltage suppressor. Figure 11: ESD clamping behavior (example) Rg Rd Vg VBR Voutput Rload Device to be protected ESD Surge ESDA19SC6 ® 5/10 ESDAxxSCx To have a good approximation of the remaining voltages at both VI/O side, we provide the typical dynamical resistance value Rd. By taking into account the following hypothesis : Rg > Rd and Rload > Rd we have: we have: Vg V output = V BR + R d × -----Rg The results of the calculation done for Vg = 8 kV, Rg = 330 Ω (IEC61000-4-2 standard), VBR = 19 V (typ.) and Rd = 0.80 Ω (typ.) give: Vouput = 38.4 V This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this approximation the parasitic inductance effect was not taken into account. This could be a few tenths of volts during a few nanoseconds at the output side. Figure 12: Ordering information scheme ESDA ESD Array Breakdown Voltage (min) 6V1 = 6.1 Volt Package SC5 = SOT23-5L SC6 = SOT23-6L 6V1 SC6 6/10 ESDAxxSCx Figure 13: SOT23-5L Package Mechanical Data DIMENSIONS A H A2 REF. A Millimeters Min. 0.90 0 0.90 0.35 0.09 2.80 1.50 0.95 2.60 0.10 3.00 0.102 0.60 0.004 10° Typ. Max. 0.15 Min. 0 1.45 0.035 1.30 0.035 0.50 0.014 0.20 0.004 3.00 0.11 1.75 0.059 Inches Typ. Max. 0.057 0.006 0.051 0.020 0.008 0.118 0.069 0.037 0.118 0.024 10° e D e b A1 A2 b c A1 D E e H L M L c M E Figure 14: Foot Print Dimensions (in millimeters) 0.65 0.025 1.3 0.051 3.6 0.137 1 0.040 mm inch ® 7/10 ESDAxxSCx Figure 15: SOT23-6L Package Mechanical Data DIMENSIONS REF. A2 A Millimeters Min. Typ. Max. 0.10 Min. 0 0.90 0 0.90 0.35 0.09 2.80 1.50 0.95 2.60 0.10 3.00 0.102 0.60 0.004 10° 1.45 0.035 1.30 0.035 0.50 0.014 0.20 0.004 3.05 0.110 1.75 0.059 Inches Typ. Max. 0.057 0.004 0.051 0.02 0.008 0.120 0.069 0.037 0.118 0.024 10° A D A1 A2 b C D A1 b L H θ E E e H L θ c e e Figure 16: Foot Print Dimensions (in millimeters) 0.60 1.20 0.95 3.50 2.30 1.10 8/10 ESDAxxSCx Table 4: Ordering Information Part Number ESDA5V3SC5 ESDA6V1SC5 ESDA14V2SC5 ESDA5V3SC6 ESDA6V1SC6 ESDA14V2SC6 ESDA17SC6 ESDA19SC6 ESDA25SC6 ■ Marking EC53 EC61 EC15 ES53 ES61 ES15 ES17 ES19 ES25 Package SOT23-5L Weight Base qty Delivery mode 16.7 mg SOT23-6L 3000 Tape & reel Epoxy meets UL94-V0 standard Table 5: Revision History Date Nov-2003 4-Nov-2004 Revision 7F 8 Last update. SOT23-6L package dimensions change for reference “D” from 3.0 millimeters (0.118 inches) to 3.05 millimeters (0.120 inches). Description of Changes ® 9/10 ESDAxxSCx Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10
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