ESM2012DV

ESM2012DV ® NPN DARLINGTON POWER MODULE ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE ) s ( ct u d o r P e INDUSTRIAL APPLICATIONS: MOTOR CONTROL ■ UPS ■ DC/DC & DC/AC CONVERTERS ■ t e l o ) (s s b O ISOTOP INTERNAL SCHEMATIC DIAGRAM t c u d o r P e t e l o s b O ABSOLUTE MAXIMUM RATINGS Symbol V CEV Parameter Collector-Emitter Voltage (V BE = -5 V) V CEO(sus) Collector-Emitter Voltage (I B = 0) V EBO IC I CM Emitter-Base Voltage (I C = 0) Value Unit 150 V 120 V 7 V Collector Current 120 A Collector Peak Current (t p = 10 ms) 180 A A Base Current 2 I BM Base Peak Current (t p = 10 ms) 4 A P tot Total Dissipation at T c = 25 o C 175 W V isol Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink Storage Temperature 2500 V IB T stg Tj Max. Operating Junction Temperature September 2003 -55 to 150 o C 150 o C 1/8 ESM2012DV THERMAL DATA R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.7 0.9 o Max 0.05 o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CER # Collector Cut-off Current (R BE = 5 Ω) V CE = V CEV V CE = V CEV T j = 100 o C I CEV # Collector Cut-off Current (V BE = -5V) V CE = V CEV V CE = V CEV T j = 100 o C I EBO # Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(SUS) * Collector-Emitter Sustaining Voltage (I B = 0) IC = 5 A L = 15 mH V clamp = 125 V h FE ∗ V CE(sat) ∗ V BE(sat) ∗ DC Current Gain I C = 100 A Collector-Emitter Saturation Voltage IC IC IC IC = = = = 70 A 70 A 100 A 100 A = = = = bs O ) I C = 100 A I C = 100 A IB = 1 A IB = 1 A di C /dt Rate of Rise of On-state Collector V CC = 90 V I B1 = 0.5 A RC = 0 tp = 3 µs T j = 100 o C V CE (3 µs)•• Collector-Emitter Dynamic Voltage V CE (5 µs)•• Collector-Emitter Dynamic Voltage u d o s ( t c e t e ol mA mA 1 7 mA mA 1 mA V 1200 1.25 1.35 1.5 1.65 2 V V V V 3 V V 1.5 230 A/µs R C = 1.3 Ω T j = 100 o C 2 3 V V CC = 90 V I B1 = 0.5 A R C = 1.3 Ω T j = 100 o C 1.8 2.5 V 0.9 0.15 0.3 2 0.3 0.6 µs µs µs V CC = 90 V R BB = Ω I B1 = 0.25 A o T j = 100 C Maximum Collector Emitter Voltage Without Snubber I CWoff = 120 A V BB = -5 V L = 60 µH T j = 125 o C I B1 = 1A V CC = 90 V R BB = 1.25 Ω VF∗ Diode Forward Voltage I F = 100 A I RM Reverse Recovery Current V CC = 125 V I F = 100 A di F /dt = -200 A/µs L < 0.05 µH T j = 100 o C V CEW 1.5 10 V CC = 90 V I B1 = 0.5 A I C = 70 A V BB = -5 V V clamp = 125 V L = 60 µH s b O 200 Unit ) s ( ct 2.3 2.35 T j = 100 o C Storage Time Fall Time Cross-over Time ts tf tc T j = 100 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % # See test circuits in databook introduction To evaluate the conduction losses of the diode use the following equations: P = 0.66 IF(AV) + 0.0034 I2F(RMS) VF = 0.66 + 0.0034 IF 2/8 t e l o 0.25 A 0.25 A T j = 100 o C 1A 1 A T j = 100 o C Max. u d o r P e V CE = 5 V IB IB IB IB Typ. 125 Base-Emitter Saturation Voltage Pr Min. 125 V 0.92 1 V 10 14 A ESM2012DV Safe Operating Areas Thermal Impedance ) s ( ct u d o r P e Derating Curve Collector-emitter Voltage Versus base-emitter Resistance t e l o ) (s s b O t c u d o r P e s b O t e l o Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/8 ESM2012DV Reverse Biased SOA Foward Biased SOA ) s ( ct u d o r P e Reverse Biased AOA Forward Biased AOA t e l o ) (s s b O t c u d o r P e t e l o s b O Switching Times Inductive Load 4/8 Switching Times Inductive Load Versus Temperature ESM2012DV Typical VF Versus IF Dc Current Gain ) s ( ct u d o r P e Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit t e l o ) (s s b O t c u d o r P e t e l o s b O Turn-on Switching Waveforms 5/8 ESM2012DV Turn-on Switching Test Circuit Turn-off Switching Waveforms ) s ( ct u d o r P e Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode t e l o ) (s t c u d o r P e t e l o s b O 6/8 s b O ESM2012DV ISOTOP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.8 12.2 0.465 0.480 A1 8.9 9.1 0.350 0.358 B 7.8 8.2 0.307 0.322 C 0.75 0.85 0.029 0.033 C2 1.95 2.05 0.076 0.080 D 37.8 38.2 1.488 D1 31.5 31.7 1.240 E 25.15 25.5 0.990 E1 23.85 24.15 0.938 0.586 E2 24.8 14.9 15.1 G1 12.6 12.8 G2 3.5 4.3 F 4.1 4.3 F1 4.6 5 P 4 4.3 4 S 30.1 1.248 Pr u d o 1.003 0.950 0.976 G P1 ) s ( ct 1.503 bs O ) 4.4 s ( t c 30.3 e t e ol 0.496 0.594 0.503 0.137 1.169 0.161 0.169 0.181 0.196 0.157 0.169 0.157 0.173 1.185 1.193 u d o r P e t e l o s b O P093A 7/8 ESM2012DV ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8