ESM5045DV_03

® ESM5045DV NPN DARLINGTON POWER MODULE s s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V EBO IC I CM IB I BM P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = -5 V) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p = 1 0 ms) Base Current Base Peak Current (t p = 1 0 ms) Total Dissipation at T c = 2 5 o C Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 600 450 7 60 90 6 12 175 2500 -55 to 150 150 Unit V V V A A A A W V o o V CEO(sus) Collector-Emitter Voltage (I B = 0) C C September 2003 1/8 ESM5045DV THERMAL DATA R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.71 1.2 0.05 o o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER # I CEV # I EBO # Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = - 5) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0 .2 A L = 25 mH V clamp = 4 50 V IC = 50 A IC IC IC IC = = = = 35 35 50 50 A A A A V CE = 5 V IB IB IB IB = = = = 0 .7 0 .7 2 .8 2 .8 A A A A T j = 1 00 o C T j = 1 00 o C T j = 1 00 o C 300 450 T j = 1 00 o C T j = 1 00 o C Min. Typ. Max. 1.5 20 1 13 1 Unit mA mA mA mA mA V V CEO(SUS) * Collector-Emitter Sustaining Voltage (I B = 0) h FE ∗ V CE(sat) ∗ DC Current Gain Collector-Emitter Saturation Voltage 150 1.2 1.4 1.4 1.6 2.3 2.3 400 4.5 8 2 2 3 V V V V V V A/ µ s V V BE(sat) ∗ di C /dt V CE (3 µ s)•• V CE (5 µ s)•• ts tf tc V CEW Base-Emitter Saturation Voltage Rate of Rise of On-state Collector Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage Without Snubber Diode Forward Voltage Reverse Recovery Current IC = 50 A IC = 50 A I B = 2 .8 A I B = 2 .8 A V CC = 3 00 V R C = 0 t p = 3 µs I B1 = 1 .05 A T j = 100 o C V CC = 300 V R C = 8 .5 Ω I B1 = 1 .05 A T j = 1 00 o C V CC = 300 V R C = 8 .5 Ω I B1 = 1 .05 A T j = 1 00 o C I C = 3 5A VCC = 5 0 V R BB = 0 .6 Ω V BB = -5 V V clamp = 450 V I B1 = 0 .7 A L = 0.07 mH T j = 1 00 o C I CWoff = 6 0 A I B1 = 2 .8 A V BB = -5 V V CC = 5 0 V L = 42 µ H R BB = 0 .6 Ω T j = 1 25 o C IF = 50 A T j = 1 00 o C V CC = 2 00 V I F = 5 0 A di F /dt = -300 A/ µ s L < 0.05 µ H T j = 1 00 o C 2.5 4.5 V 3.2 0.25 0.75 450 5 0.5 1.5 µs µs µs V VF∗ I RM 1.5 32 1.8 38 V A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % To evaluate the conduction losses of the diode use the following equations: P = 1.5 IF(AV) + 0.0055 I2F(RMS) VF = 1.5 + 0.0055 IF # See test circuits in databook introduction 2/8 ESM5045DV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/8 ESM5045DV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/8 ESM5045DV Dc Current Gain Typical VF Versus IF Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit Turn-on Switching Waveforms 5/8 ESM5045DV Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode 6/8 ESM5045DV ISOTOP MECHANICAL DATA DIM. MIN. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S 14.9 12.6 3.5 4.1 4.6 4 4 30.1 11.8 8.9 7.8 0.75 1.95 37.8 31.5 25.15 23.85 24.8 15.1 12.8 4.3 4.3 5 4.3 4.4 30.3 0.586 0.496 0.137 0.161 0.181 0.157 0.157 1.185 mm TYP. MAX. 12.2 9.1 8.2 0.85 2.05 38.2 31.7 25.5 24.15 MIN. 0.465 0.350 0.307 0.029 0.076 1.488 1.240 0.990 0.938 0.976 0.594 0.503 1.169 0.169 0.196 0.169 0.173 1.193 inch TYP. MAX. 0.480 0.358 0.322 0.033 0.080 1.503 1.248 1.003 0.950 P093A 7/8 ESM5045DV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8