ESM765-800

® ESM765-800 RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND IRM AT 100°C UNDER USERS CONDITIONS MOTOR CONTROLS AND CONVERTERS SWITCH MODE POWER SUPPLIES INSULATED PACKAGE: TO-220AC Insulating voltage = 2500 VRMS DESCRIPTION Fast recovery rectifiers suited for applications in combination with superswitch transistors. A K 10 A 800 V 150°C 1.35 V 300 ns TO-220AC Symbol VRRM IF(RMS) IF(AV) IFSM Ptot Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Power dissipation Storage temperature range Maximum operating junction temperature Tc = 100°C δ = 0.5 Tp = 10 ms Sinusoidal Tc = 100°C tp ≤ 20µs Value 800 16 10 120 20 - 40 to + 150 + 150 Unit V A A A W °C August 1999 - Ed: 2B 1/5 ESM765-800 THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Value 2 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameters Reverse leakage current Forward voltage drop Test conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Min. Typ. Max. 20 1 1.4 1.35 Unit mA mA V VR = VRRM IF = 10 A To evaluate the conduction losses use the following equation : P = 1.2 x IF(AV) + 0.015 x IF2(RMS) VF = 1.2 + 0.015 IF RECOVERY CHARACTERISTICS Symbol trr Qrr Tj = 25°C Tj = 25°C Test conditions IF = 1A dIF/dt = - 15A/µs VR = 30V VR = 200V 2.3 IF = 10A dIF/dt = - 50A/µs Min. Typ. Max. 300 Unit ns µC Fig. 1: Low frequency power losses versus average current. Fig. 2: Peak current versus form factor. 2/5 ESM765-800 Fig. 3: Non repetitive peak surge current versus overload duration. Fig. 4: Thermal impedance versus pulse width. Fig. 5: Voltage drop versus forward current. Fig. 6: Capacitance versus applied reverse voltage 3/5 ESM765-800 Fig. 7: Recovery charge versus dIF/dt. Fig. 8: Recovery time versus dIF/dt. Fig. 9: Peak reverse current versus dIF/dt. 4/5 ESM765-800 PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Millimeters Min. H2 C L5 ØI L6 L2 D L7 A Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Max. L9 F1 L4 F G M E 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5