EVAL6494L
Demonstration board for L6494L gate driver
Data brief
Description
The L6494L is a high voltage device
manufactured with the BCD6 “OFF-LINE”
technology. It is a single-chip half-bridge gate
driver for N-channel power MOSFETs or IGBTs.
Both device outputs can sink 2.5 A and source 2
A, making the L6494L particularly suited for
medium and high capacity power
MOSFETs\IGBTs.
The integrated bootstrap diode as well as all of
the integrated features of this driver make the
application's PCB design simpler and more
compact, and help reducing the overall bill of
material.
Features
Driver current capability: 2 A source, 2.5 A sink
Integrated bootstrap diode
Single input and shutdown pin
Adjustable deadtime
3.3 V, 5 V TTL/CMOS inputs with hysteresis
UVLO on both high-side and low-side sections
The EVAL6494L board allows evaluating all of the
L6494L features while driving a power switch in
the TO-220 or TO-247 package.
The board allows easily to select and modify the
values of relevant external components in order to
ease driver performance evaluation under
different applicative conditions and fine pre-tuning
of final application components.
dV/dt immunity: 50 V/ns in full temperature
range
Compact and simplified layout
Bill of material reduction
Flexible, easy and fast design
November 2017
DocID031198 Rev 1
For further information contact your local STMicroelectronics sales office.
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Schematic diagram
EVAL6494L
Schematic diagram
Figure 1. EVAL6494L circuit schematic
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EVAL6494L
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Bill of material
Bill of material
Table 1. EVAL6494L - bill of material
Part reference
Part value
Part description
C1
10 µF / 50 V
Ceramic capacitor, SMT 1206
C2
68 µF / 450 V
Electrolytic capacitor, 68 µF, 450 V, 20%
radial P7.5 mm 18 x 25
C3
2.2 µF / 50 V
Ceramic capacitor, SMT 1206 or T.H.
C4, C7
N. M.
Ceramic capacitor, SMT 0805
C5, C10
220 nF / 50 V
Ceramic capacitor, SMT 0805
C6
220 nF / 50 V
Ceramic capacitor, SMT 0603
C8, C9
33 pF / 25 V
Ceramic capacitor, SMT 0603
D1
N. M.
Diode DO-41 or SMA
D2, D3
STPS2L30A
Schottky diode 30 V, 2 A, SMA
JP1
Jumper - OPEN
SMT jumper
JP2
Jumper - CLOSED
SMT jumper
J1
Phoenix Contact 1985991 or similar
Conn. term. block. T.H. 3 POS 5.08 mm
J2
2 x Phoenix Contact 1984950 or
similar
Conn. term. block. T.H. 6 POS 3.5 mm
J3
FCI 68000-406HLF or similar
Conn. header 6 POS 2.54 mm STR TIN
Q1, Q2
To be selected by customer
IGBT/MOSFET, TO-220 or TO-247
R1
10
Resistor, SMT 1206
R2, R4, R6, R7
To be selected by customer
Resistor, SMT 1206 or T.H.
R3
43 k
Resistor, SMT 0603
R5
N. M.
Resistor, SMT 0603
R8
1 k
Resistor, SMT 0603
R9
0
Resistor, SMT 0805
TP1, TP4, TP5
RS 200-207 or similar
PCB test terminal 1 mm
TR1
Murata PV36W204C01B00 or similar
Trimmer 200 k, 0.5 W, T. H.
U1
L6494LD
High voltage high and low-side gate driver,
SO-14
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Layout
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EVAL6494L
Layout
Figure 2. EVAL6494L - layout (top layer)
Figure 3. EVAL6494L - layout (bottom layer)
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EVAL6494L
Layout
Figure 4. EVAL6494L - layout (component placement view)
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Revision history
4
EVAL6494L
Revision history
Table 2. Document revision history
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Date
Revision
14-Nov-2017
1
Changes
Initial release.
DocID031198 Rev 1
EVAL6494L
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© 2017 STMicroelectronics – All rights reserved
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