EVALPWD13F60

EVALPWD13F60 High-voltage evaluation board for the PWD13F60 full-bridge high density power driver Data brief Applications       Motor drivers for industrial and home appliances Factory automation Fans and pumps HID, ballasts Power supply units DC-DC and DC-AC converters Description The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. Features           Power system-in-package integrating gate drivers and high-voltage power MOSFETs:  Low RDS(on) = 320 mΩ  BVDSS = 600 V Suitable for operating as:  Full-bridge  Dual independent half-bridges Wide input supply voltage down to 6.5 V UVLO protection on supply voltage 3.3 V to 15 V compatible inputs with hysteresis and pull-down Interlocking function to prevent cross conduction Internal bootstrap diodes QFN (10x13 mm) package Very compact layout RoHS compliant November 2017 The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently. The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage. The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling. Both controlling and power signals are available on pin strip for easy connection to customer's board. DocID030879 Rev 2 For further information contact your local STMicroelectronics sales office 1/7 www.st.com Schematic diagram 1 EVALPWD13F60 Schematic diagram Figure 1: EVALPWD13F60 circuit schematic 2/7 DocID030879 Rev 2 EVALPWD13F60 2 Bill of material Bill of material Table 1: EVALPWD13F60 bill of materials Reference Part/value Description C1, C2 100 nF / 25 V Ceramic capacitor, SMT 0603 C4, C5 220 nF / 25 V Ceramic capacitor, SMT 0805 C6, C7 33 nF / 630 V Ceramic capacitor, SMT 1206 C8 10 µF / 25 V Ceramic capacitor, SMT 1206 C9, C10 N.M. Ceramic capacitor, SMT 1206 C11, C12, C13, C14 470 pF Ceramic capacitor, SMT 0603 JP2 Closed SMT jumper J1, J2 Pin strip Conn. header 12 POS 2.54 mm R3, R5 N.M. Chip resistor, SMT 2512 R4, R6 0Ω Chip resistor, SMT 2512 R10, R11 N.M. Chip resistor, SMT 0805 R12, R13, R14, R15 33 Ω Chip resistor, SMT 0603 R16 0Ω Chip resistor, SMT 0603 TP1, TP2 Test point Loop test point, THT TP5 Test point Pin test point, THT U1 PWD13F60 Full-bridge with integrated gate driver, QFN 10x13 mm DocID030879 Rev 2 3/7 PCB layout 3 EVALPWD13F60 PCB layout Figure 2: EVALPWD13F60 – layout (component placement view) Figure 3: EVALPWD13F60 – layout (top layer 1) Figure 4: EVALPWD13F60 – layout (inner layer 2) 4/7 DocID030879 Rev 2 EVALPWD13F60 PCB layout Figure 5: EVALPWD13F60 – layout (inner layer 3) Figure 6: EVALPWD13F60 – layout (bottom layer 4) DocID030879 Rev 2 5/7 Revision history 4 EVALPWD13F60 Revision history Table 2: Document revision history 6/7 Date Version Changes 23-Aug-2017 1 Initial release. 13-Nov-2017 2 Updated the title, features and description in cover page. Updated Figure 1: "EVALPWD13F60 circuit schematic". Added Table 1: "EVALPWD13F60 bill of materials". DocID030879 Rev 2 EVALPWD13F60 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID030879 Rev 2 7/7