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EVALSTDRV600HB8

EVALSTDRV600HB8

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    L6385E,L6387E,L6388E,L6389E,L6395,L6398,L6399 半 H 桥驱动器(外部 FET) 电源管理 评估板

  • 数据手册
  • 价格&库存
EVALSTDRV600HB8 数据手册
EVALSTDRV600HB8 Demonstration board kit for L638xE and L639x high voltage gate Data brief Description The L638xE and L639x are high voltage devices manufactured with the BCD™ “offline” technology. They are single chip half-bridge gate drivers for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for the easy interfacing microcontroller and up to 15 V for Hall-effect interfaces. Features  Half-bridge configuration  High voltage rail up to 600 V  Includes samples of each compatible gate driver in SO8 package – L6385E, L6387E, L6388E, L6389E, – L6395, L6398, L6399  Compatible with MOSFETs/IGBTs in – DPAK, D2PAK, TO-220, TO-220FP  dV/dt transient immunity ± 50 V/ns in full temperature range  Integrated bootstrap diode  Dedicated high- and low-side driving inputs  Compact and simplified layout  Gate drivers in the kit features different functionalities and characteristics – UVLO on both - high-side and low-side – Internal deadtime, or no deadtime – Interlocking for anti cross-conduction protection – Ability to drive asymmetrical half-bridges and switched reluctance motors – Active high or active low LIN for single input gate driving April 2017 The integrated bootstrap diode allows a more compact and cost-effective design, but the use of the external diode is still possible in case of specific requirements. The EVALSTDRV600HB8 contains 2 samples in the SO8 package for each of the compatible gate drivers, and allows evaluating all of the gate drivers features and functionalities while driving a half-bridge power stage based on N-channel MOSFETs or IGBTs in several different packages and with voltage rating up to 600 V. Essential passive components such as the filtering and bootstrap capacitor are already mounted on the PCB, while the gate driving network shall be populated depending on the selected power switch. Passive components footprints are compatible with both SMT and T.H. components, so they allow a fast and easy configuration and modification. DocID030583 Rev 1 For further information contact your local STMicroelectronics sales office. 1/7 www.st.com Supported devices 1 EVALSTDRV600HB8 Supported devices The EVALSTDRV600HB8 board supports several high voltage high- and low-side driver devices all in the SO8 package. Table 1. Supported devices and characteristics Part name Max. supply voltage Current capability sink/source 3.3 V compatible inputs L6385ED 17 V 650 mA 400 mA NO ON 9.6 V ON 9.5 V OFF 8.3 V OFF 8.2 V NO NO L6387ED 17 V 650 mA 400 mA NO ON 6.0 V OFF 5.5 V NO YES L6388ED 17 V 650 mA 400 mA YES ON 9.6 V ON 9.5 V OFF 8.3 V OFF 8.2 V 320 ns YES L6389ED 17 V 650 mA 400 mA YES ON 9.6 V ON 9.5 V OFF 8.3 V OFF 8.2 V 470 ns YES L6395D 20 V 430 mA 290 mA YES ON 9.5 V ON 8.6 V OFF 8.8 V OFF 8.0 V NO NO L6398D(1) 20 V 430 mA 290 mA YES ON 9.5 V ON 9.0 V OFF 8.0 V OFF 8.0 V 320 ns YES L6399D 20 V 430 mA 290 mA YES ON 9.5 V ON 9.0 V OFF 8.0 V OFF 8.0 V 320 ns YES UVLO on VCC 1. LIN input active low, allows single input driving configuration. 2/7 DocID030583 Rev 1 UVLO on Deadtime Interlocking VBO NO DocID030583 Rev 1 18.@) 01&/ +1 18.@-      3  3 18.@18.@) 3 $  O' $ /. 51 7DD 7DD $  7 $ Q'7 $ Q'7 7DD     (/% )*/ -*/ 3  + %CFYU 18.@18.@) 7DD -7( 065 )7( #PPU % /. -Y&-Y (/% 7DD )*/ -*/ 6         -7( 065 $ O' #005 )7( 51 /. /. 3 /. 3 /. 3 3 + % 065 4514; % 4514;    $ /. (-  $ /. ()  )7     /. 2 /. 2 ". )7 /. $ 2 + EVALSTDRV600HB8 Schematic diagram Schematic diagram Figure 1. EVALSTDRV600HB8 circuit schematic 3/7 7 Bill of material 3 EVALSTDRV600HB8 Bill of material Table 2. EVALSTDRV600HB8 - bill of material 4/7 Part reference Part value Part description C1 N.M. C2 220 nF / 50 V C3, C4 N.M. Ceramic capacitor, SMT 0805 C5, C6 33 pF / 25 V Ceramic capacitor, SMT 0603 C7 N.M. Ceramic capacitor, SMT 1206 C8 220 nF / 50 V Ceramic capacitor, SMT 0603 C9 10 µF / 50 V Electrolytic capacitor, D5, P2.5 D1, D2 STPS0540Z Schottky diode 40 V, 0.5 A, SOD-123 D3 N. M. J1 MORSV350-4P PCB terminal block 3.50 mm, 4 POS J2 STRIP254P-M-4 Male pin strip 2.54 mm, 4 POS J3 MORSV508-3P PCB terminal block 5.08 mm, 3 POS Q1, Q2 N. M. Power MOSFETs or IGBTs, DPAK, D2PAK, or TO220 R1 10  Resistor, SMT 0805 R2, R3, R4, R5 N.M. Resistor, SMT 0805 or T.H. P10 R6 2 Resistor, SMT 0603 R13, R14 1 k Resistor, SMT 0603 TP1, TP2 TPTH-RING-1MM U1 N.M. Electrolytic capacitor, D18, P7.62 Ceramic capacitor, SMT 0805 (or 2.5 x 7.5 P05) DO41 or SMA PCB test terminal 1 mm 600 V high- and low-side gate driver, SO8 DocID030583 Rev 1 EVALSTDRV600HB8 4 Layout and component placements Layout and component placements Figure 2. EVALSTDRV600HB8 - layout (top layer) Figure 3. EVALSTDRV600HB8 - Layout (bottom layer) Figure 4. EVALSTDRV600HB8 - layout (component placement top view) ". DocID030583 Rev 1 5/7 7 Revision history 5 EVALSTDRV600HB8 Revision history Table 3. Document revision history 6/7 Date Revision 28-Apr-2017 1 Changes Initial release. DocID030583 Rev 1 EVALSTDRV600HB8 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID030583 Rev 1 7/7 7
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