EVALSTDRV600HB8
Demonstration board kit for L638xE and L639x high voltage gate
Data brief
Description
The L638xE and L639x are high voltage devices
manufactured with the BCD™ “offline”
technology. They are single chip half-bridge gate
drivers for N-channel power MOSFET or IGBT.
The high-side (floating) section is designed to
stand a voltage rail up to 600 V. The logic inputs
are CMOS/TTL compatible down to 3.3 V for the
easy interfacing microcontroller and up to 15 V for
Hall-effect interfaces.
Features
Half-bridge configuration
High voltage rail up to 600 V
Includes samples of each compatible gate
driver in SO8 package
– L6385E, L6387E, L6388E, L6389E,
– L6395, L6398, L6399
Compatible with MOSFETs/IGBTs in
– DPAK, D2PAK, TO-220, TO-220FP
dV/dt transient immunity ± 50 V/ns in full
temperature range
Integrated bootstrap diode
Dedicated high- and low-side driving inputs
Compact and simplified layout
Gate drivers in the kit features different
functionalities and characteristics
– UVLO on both - high-side and low-side
– Internal deadtime, or no deadtime
– Interlocking for anti cross-conduction
protection
– Ability to drive asymmetrical half-bridges
and switched reluctance motors
– Active high or active low LIN for single input
gate driving
April 2017
The integrated bootstrap diode allows a more
compact and cost-effective design, but the use of
the external diode is still possible in case of
specific requirements.
The EVALSTDRV600HB8 contains 2 samples in
the SO8 package for each of the compatible gate
drivers, and allows evaluating all of the gate
drivers features and functionalities while driving a
half-bridge power stage based on N-channel
MOSFETs or IGBTs in several different packages
and with voltage rating up to 600 V.
Essential passive components such as the
filtering and bootstrap capacitor are already
mounted on the PCB, while the gate driving
network shall be populated depending on the
selected power switch.
Passive components footprints are compatible
with both SMT and T.H. components, so they
allow a fast and easy configuration and
modification.
DocID030583 Rev 1
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Supported devices
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EVALSTDRV600HB8
Supported devices
The EVALSTDRV600HB8 board supports several high voltage high- and low-side driver
devices all in the SO8 package.
Table 1. Supported devices and characteristics
Part
name
Max. supply
voltage
Current
capability
sink/source
3.3 V compatible
inputs
L6385ED
17 V
650 mA
400 mA
NO
ON 9.6 V ON 9.5 V
OFF 8.3 V OFF 8.2 V
NO
NO
L6387ED
17 V
650 mA
400 mA
NO
ON 6.0 V
OFF 5.5 V
NO
YES
L6388ED
17 V
650 mA
400 mA
YES
ON 9.6 V ON 9.5 V
OFF 8.3 V OFF 8.2 V
320 ns
YES
L6389ED
17 V
650 mA
400 mA
YES
ON 9.6 V ON 9.5 V
OFF 8.3 V OFF 8.2 V
470 ns
YES
L6395D
20 V
430 mA
290 mA
YES
ON 9.5 V ON 8.6 V
OFF 8.8 V OFF 8.0 V
NO
NO
L6398D(1)
20 V
430 mA
290 mA
YES
ON 9.5 V ON 9.0 V
OFF 8.0 V OFF 8.0 V
320 ns
YES
L6399D
20 V
430 mA
290 mA
YES
ON 9.5 V ON 9.0 V
OFF 8.0 V OFF 8.0 V
320 ns
YES
UVLO on
VCC
1. LIN input active low, allows single input driving configuration.
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UVLO on
Deadtime Interlocking
VBO
NO
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EVALSTDRV600HB8
Schematic diagram
Schematic diagram
Figure 1. EVALSTDRV600HB8 circuit schematic
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Bill of material
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EVALSTDRV600HB8
Bill of material
Table 2. EVALSTDRV600HB8 - bill of material
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Part reference
Part value
Part description
C1
N.M.
C2
220 nF / 50 V
C3, C4
N.M.
Ceramic capacitor, SMT 0805
C5, C6
33 pF / 25 V
Ceramic capacitor, SMT 0603
C7
N.M.
Ceramic capacitor, SMT 1206
C8
220 nF / 50 V
Ceramic capacitor, SMT 0603
C9
10 µF / 50 V
Electrolytic capacitor, D5, P2.5
D1, D2
STPS0540Z
Schottky diode 40 V, 0.5 A, SOD-123
D3
N. M.
J1
MORSV350-4P
PCB terminal block 3.50 mm, 4 POS
J2
STRIP254P-M-4
Male pin strip 2.54 mm, 4 POS
J3
MORSV508-3P
PCB terminal block 5.08 mm, 3 POS
Q1, Q2
N. M.
Power MOSFETs or IGBTs, DPAK, D2PAK, or TO220
R1
10
Resistor, SMT 0805
R2, R3, R4, R5
N.M.
Resistor, SMT 0805 or T.H. P10
R6
2
Resistor, SMT 0603
R13, R14
1 k
Resistor, SMT 0603
TP1, TP2
TPTH-RING-1MM
U1
N.M.
Electrolytic capacitor, D18, P7.62
Ceramic capacitor, SMT 0805 (or 2.5 x 7.5 P05)
DO41 or SMA
PCB test terminal 1 mm
600 V high- and low-side gate driver, SO8
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EVALSTDRV600HB8
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Layout and component placements
Layout and component placements
Figure 2. EVALSTDRV600HB8 - layout (top layer)
Figure 3. EVALSTDRV600HB8 - Layout (bottom layer)
Figure 4. EVALSTDRV600HB8 - layout (component placement top view)
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Revision history
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EVALSTDRV600HB8
Revision history
Table 3. Document revision history
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Date
Revision
28-Apr-2017
1
Changes
Initial release.
DocID030583 Rev 1
EVALSTDRV600HB8
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