FW26025A1

® FW26025A1 PNP POWER DARLINGTON TRANSISTOR s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 8 KΩ R2 Typ. = 60 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 C o Value 100 100 5 20 40 0.5 160 -65 to 200 200 Unit V V V A A A W o o Storage Temperature Max. Operating Junction Temperature C C November 2003 1/4 FW26025A1 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.09 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CEO I EBO Parameter Collector Cut-off Current (V BE = - 1.5V) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 1 00 V V CE = 1 00 V V CE = 5 0 V V EB = 5 V IC = 2 mA I C = 1 00 mA IC = 10 A IC = 20 A IC = 20 A IC = 10 A IC = 2 A IC = 10 A IC = 30 A IC = 3 A IE = 0 I B = 4 0 mA I B = 2 00 mA I B = 2 00 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 1 0 V V CB = 1 0 V f = 1KHz f = 100KHz 5000 750 200 300 600 pF 90 100 2 3 4 2.8 18000 T C = 1 50 o C Min. Typ. Max. 0.5 5 1 2 Unit mA mA mA mA V V V V V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ V BE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain h fe C CBO Small Signal Current Gain Collector Base Capacitance ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 FW26025A1 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E FW26025A1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4