GB10NC60HD

STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH™ IGBT General features Type STGB10NC60HD STGP10NC60HD ■ ■ ■ VCES 600V 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V < 2.5V 10A 10A 3 1 1 2 3 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode D²PAK TO-220 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop. Internal schematic diagram Applications ■ ■ ■ High frequency motor controls Smps and pfc in both hard switch and resonant topologies Motor drivers Order codes Part Number STGB10NC60HD STGP10NC60HD Marking GB10NC60HD GP10NC60HD Package D²PAK TO-220 Packaging Tape & reel Tube February 2007 Rev 3 1/15 www.st.com 15 Electrical ratings STGB10NC60HD - STGP10NC60HD 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) ICL(2) IF VGE PTOT Tstg Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Collector current (pulsed) Diode RMS forward current at TC = 25°C Gate-emitter voltage Total dissipation at TC = 25°C Storage temperature – 55 to 150 Operating junction temperature °C Value 600 20 10 40 10 ±20 60 Unit V A A A A V W 1. Calculated according to the iterative formula:: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp=480V, Tj=150°C, RG=10Ω, VGE=15V Table 2. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 2.08 62.5 Unit °C/W °C/W 2/15 STGB10NC60HD - STGP10NC60HD Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 1.9 1.7 3.75 2.5 Typ. Max. Unit V V V V µA mA nA S Collector-emitter saturation VGE= 15V, IC= 5A voltage VGE= 15V, IC= 5A, Tc= 125°C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 µA VCE= Max rating,TC= 25°C VCE=Max rating,TC= 125°C VGE= ±20V, VCE= 0 VCE = 15V, IC= 5A 5.75 150 1 ±100 3.5 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 5A, VGE = 15V, (see Figure 17) Min. Typ. 365 43 8.3 19.2 4.5 7 Max. Unit pF pF pF nC nC nC 3/15 Electrical characteristics STGB10NC60HD - STGP10NC60HD Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Test conditions VCC = 390V, IC = 5A , RG= 10Ω VGE= 15V, Tj= 25°C (see Figure 16) VCC = 390V, IC = 5A , RG= 10Ω VGE= 15V, Tj=125°C (see Figure 16) Vcc = 390V, IC = 5A, , RGE = 10Ω VGE = 15V,TJ=25°C (see Figure 16) Vcc = 390V, IC = 5A, , RGE=10Ω VGE =15V, Tj=125°C (see Figure 16) Min. Typ. 14.2 5 1000 Max. Unit ns ns A/µs Turn-on delay time Current rise time Turn-on current slope 14 5 920 ns ns A/µs Off voltage rise time Turn-off delay time Current fall time 27 72 85 ns ns ns Off voltage rise time Turn-off delay time Current fall time 50 108 139 ns ns ns Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 5A , RG= 10Ω VGE=15V, Tj=25°C (see Figure 16) VCC = 390V, IC = 5A , RG= 10Ω VGE= 15V, Tj= 125°C (see Figure 16) Min. Typ. 31.8 95 126.8 Max. Unit µJ µJ µJ Turn-on switching losses Turn-off switching losses Total switching losses 61.8 173 234.8 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 4/15 STGB10NC60HD - STGP10NC60HD Electrical characteristics Table 7. Symbol Vf trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 2.5A If = 2.5A, Tj = 125°C If = 5A,VR = 40V, Tj = 25°C, di/dt = 100 A/µs (see Figure 19) If = 5A,VR = 40V, Tj =125°C, di/dt = 100A/µs (see Figure 19) Min. Typ. 1.75 1.3 21.5 14.2 1.32 33 30.5 1.85 Max. 2.1 Unit V V ns nC A ns nC A 5/15 Electrical characteristics STGB10NC60HD - STGP10NC60HD 2.1 Figure 1. Electrical characteristics (curves) Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 6/15 STGB10NC60HD - STGP10NC60HD Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Electrical characteristics Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/15 Electrical characteristics Figure 13. Thermal Impedance STGB10NC60HD - STGP10NC60HD Figure 14. Turn-off SOA Figure 15. Emitter-collector diode characteristics 8/15 STGB10NC60HD - STGP10NC60HD Test circuit 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Figure 19. Diode recovery time waveform 9/15 Package mechanical data STGB10NC60HD - STGP10NC60HD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STGB10NC60HD - STGP10NC60HD Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 11/15 Package mechanical data STGB10NC60HD - STGP10NC60HD D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 12/15 STGB10NC60HD - STGP10NC60HD Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 13/15 Revision history STGB10NC60HD - STGP10NC60HD 6 Revision history Table 8. Date 30-Jan-2006 06-Nov-2006 08-Feb-2007 Revision history Revision 1 2 3 Initial release. Complete version The document has been reformatted Changes 14/15 STGB10NC60HD - STGP10NC60HD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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