GB20NB37LZ

STGB20NB37LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB20NB37LZ s s s s s s s VCES CLAMPED VCE(sat) < 2.0 V IC 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 D²PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AUTOMOTIVE IGNITION ORDERING INFORMATION SALES TYPE STGB20NB37LZT4 MARKING GB20NB37LZ PACKAGE D2PAK PACKAGING TAPE & REEL September 2003 1/8 STGB20NB37LZ ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Eas PTOT ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 100°C Collector Current (pulsed) Single Pulse Energy Tc = 25°C Total Dissipation at TC = 25°C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 20 80 700 200 1.33 8 –55 to 175 Unit V V V A A A mJ W W/°C KV °C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.75 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol BV(CES) Parameter Clamped Voltage Test Conditions IC = 2 mA, VGE = 0, Tc= - 40°C IC = 2 mA, VGE = 0, Tc= 25°C IC = 2 mA, VGE = 0, Tc= 150°C BV(ECR) BVGE ICES IGES RGE Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance IC = 75 mA, Tc = 25°C IG = ± 2 mA VCE = 15 V, VGE =0 ,TC =150 °C VCE =200 V, VGE=0 ,TC =150°C VGE = ± 10V , VCE = 0 ± 300 10 ± 660 15 20 12 375 Min. Typ. 405 400 395 28 14 16 10 100 ± 1000 30 425 Max. Unit V V V V V µA µA µA KΩ ON (*) Symbol VGE(th) Parameter Gate Threshold Voltage Test Conditions VCE = VGE, IC = 250µA, Tc=-40°C VCE = VGE, IC = 250µA, Tc= 25°C VCE =VGE, IC = 250µA, Tc=150°C VCE(SAT) Collector-Emitter Saturation Voltage VCE =4.5V, IC = 10 A, Tc= 25°C VCE =4.5V, IC = 10 A, Tc= 150°C VCE =4.5V, IC = 20 A, Tc= 25°C VCE =4.5V, IC = 20 A, Tc= 150°C Min. 1.2 1 0.6 1.1 1.0 1.35 1.25 1.8 1.7 2.0 2.0 1.4 2 Typ. Max. Unit V V V V V V V 2/8 STGB20NB37LZ DYNAMIC Symbol gfs (1) Cies Coes Cres Qg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge VCE = 280V, IC = 20 A, VGE = 5V Test Conditions VCE = 25 V , IC =20 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 35 2300 165 28 51 Max. Unit S pF pF pF nC FUNCTIONAL CHARACTERISTICS Symbol II U.I.S. Parameter Latching Current Functional Test Open Secondary Coil Test Conditions VClamp = 250 V, TC = 125 °C RGOFF = 1KΩ , VGE = 4.5 V RGOFF =1KΩ , L = 1.6 mH, Tc=125°C Min. Typ. 40 20 Max. Unit A A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 250 V, IC = 20 A RG = 1KΩ , VGE = 4.5 V VCC= 250 V, IC = 20 A RG=1KΩ, VGE = 4.5 V VCC= 250 V, IC = 20 A, Tc=25°C RG=1KΩ, VGE = 4.5 V, Tc=150°C Min. Typ. 2.3 0.6 550 8.8 9.2 Max. Unit µs µs A/µs mJ mJ SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 250 V, IC = 20 A, RGE = 1K Ω , VGE = 4.5 V Tj = 125 °C Test Conditions Vcc = 250 V, IC = 20 A, RGE = 1K Ω , VGE = 4.5 V Min. Typ. 4.8 2.6 2.0 11.5 11.8 7.8 3.5 3.9 12.0 17.8 Max. Unit µs µs µs µs mJ µs µs µs µs mJ (1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (*)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail 3/8 STGB20NB37LZ Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance Collector-Emitter On Voltage vs Temperature Self Clamped Inductive Switching Energy vs Open Secondary Coil 4/8 STGB20NB37LZ Capacitance Variations Gate Charge vs Gate-Emitter Voltage Normalized BVGEO (Zener Gate-Emitter) vs Temperature Normalized Clamping Voltage vs Gate Resistance (Inductive Switch Configuration) Normalized Clamping Voltage vs Temperature Thermal Impedance 5/8 STGB20NB37LZ D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 8º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 6/8 3 1 STGB20NB37LZ D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 7/8 STGB20NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8