GD3NB60K

STGP3NB60K STGD3NB60K N-CHANNEL 6A - 600V - TO-220 / DPAK SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGP3NB60K STGD3NB60K s VCES 600 V 600 V VCE(sat) (Max) @ 25°C < 2.8 V < 2.8 V IC(#) @100°C 6A 6A 3 1 s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED 3 1 2 TO-220 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 MARKING GP3NB60K GD3NB60K PACKAGE TO-220 DPAK PACKAGING TUBE TAPE & REEL March 2004 1/11 STGP3NB60K - STGD3NB60K ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C (#) Collector Current (continuous) at TC = 100°C (#) Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ±20 10 6 24 50 0.4 – 55 to 150 150 Unit V V V A A A W W/°C °C °C ( ) Pulse width limited by safe operating area THERMAL DATA TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 62.5 2.5 100 DPAK °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20V , VCE = 0 VCE = VGE, IC = 250µA VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tj =125°C 5 2.3 1.9 Min. 600 50 500 ±100 7 2.8 Typ. Max. Unit V µA µA nA V V V 2/11 STGP3NB60K - STGD3NB60K SWITCHING PARAMETERS Symbol gfs Cies Coes Cres Qg Qge Qgc tscw td(on) tr (di/dt)on Eon tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Short Circuit Withstand Time Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Test Conditions VCE = 25V, Ic = 3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 2.4 220 50 5.8 14 3.3 7.5 10 14 5 520 30 90 20 33 100 58 85 190 54 90 130 111 195 18 Max. Unit S pF pF pF nC nC nC µs ns ns A/µs µJ ns ns ns ns µJ µJ ns ns ns ns µJ µJ VCE = 480V, IC = 3 A, VGE = 15V Vce = 0.5 VBR(CES), VGE=15V, Tj = 125°C , RG = 10 Ω VCC = 480 V, IC = 3 A RG = 10Ω, VGE = 15 V VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 25 °C Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) (#) Calculated according to the iterative formula: T JMAX – T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, IC) 3/11 STGP3NB60K - STGD3NB60K Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/11 STGP3NB60K - STGD3NB60K Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Turn-Off SOA 5/11 STGP3NB60K - STGD3NB60K Thermal Impedance for TO-220 Thermal Impedance for DPAK 6/11 STGP3NB60K - STGD3NB60K Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/11 STGP3NB60K - STGD3NB60K TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 øP Q 8/11 STGP3NB60K - STGD3NB60K TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 9/11 STGP3NB60K - STGD3NB60K DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 1.85 7.6 2.75 4.1 8.1 2.1 16.3 BASE QTY 2500 mm MIN. 6.8 10.4 MAX. 7 10.6 12.1 1.6 inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 R 40 W 15.7 * on sales type 10/11 STGP3NB60K - STGD3NB60K Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 11/11