GD3NB60SD

STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH™ IGBT TYPE STGD3NB60SD s VCES 600 V VCE(sat) < 1.5 V IC 3A s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE OFF LOSSES INCLUDE TAIL CURRENT 3 1 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (