GP10NB60SD

厂商：
STMICROELECTRONICS(意法半导体)
封装：
描述：
GP10NB60SD - N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT - STMicroelectronics

数据手册：

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数据手册
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GP10NB60SD 数据手册

STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH™ IGBT General features Type STGP10NB60SD ■ ■ VCES 600V VCE(sat) (Max)@ 25°C < 1.7V IC @100°C 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) TO-220 3 1 2 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (

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