STGP3NB60K STGD3NB60K
N-CHANNEL 6A - 600V - TO-220 / DPAK SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE STGP3NB60K STGD3NB60K
s
VCES 600 V 600 V
VCE(sat) (Max) @ 25°C < 2.8 V < 2.8 V
IC(#) @100°C 6A 6A
3 1
s s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED
3 1 2
TO-220
DPAK
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE STGP3NB60K STGD3NB60KT4 MARKING GP3NB60K GD3NB60K PACKAGE TO-220 DPAK PACKAGING TUBE TAPE & REEL
March 2004
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ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C (#) Collector Current (continuous) at TC = 100°C (#) Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ±20 10 6 24 50 0.4 – 55 to 150 150 Unit V V V A A A W W/°C °C °C
( ) Pulse width limited by safe operating area
THERMAL DATA
TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 62.5 2.5 100 DPAK °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS
Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20V , VCE = 0 VCE = VGE, IC = 250µA VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tj =125°C 5 2.3 1.9 Min. 600 50 500 ±100 7 2.8 Typ. Max. Unit V µA µA nA V V V
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SWITCHING PARAMETERS
Symbol gfs Cies Coes Cres Qg Qge Qgc tscw td(on) tr (di/dt)on Eon tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Short Circuit Withstand Time Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Test Conditions VCE = 25V, Ic = 3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 2.4 220 50 5.8 14 3.3 7.5 10 14 5 520 30 90 20 33 100 58 85 190 54 90 130 111 195 18 Max. Unit S pF pF pF nC nC nC µs ns ns A/µs µJ ns ns ns ns µJ µJ ns ns ns ns µJ µJ
VCE = 480V, IC = 3 A, VGE = 15V Vce = 0.5 VBR(CES), VGE=15V, Tj = 125°C , RG = 10 Ω VCC = 480 V, IC = 3 A RG = 10Ω, VGE = 15 V VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 25 °C
Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)
(#) Calculated according to the iterative formula: T JMAX – T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, IC)
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Output Characteristics Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
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Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Turn-Off SOA
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Thermal Impedance for TO-220 Thermal Impedance for DPAK
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Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching
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TO-220 MECHANICAL DATA
mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 øP Q
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.8 0.024 0
o
0.039 0o
P032P_B
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DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 1.85 7.6 2.75 4.1 8.1 2.1
16.3
BASE QTY 2500
mm MIN. 6.8 10.4 MAX. 7 10.6 12.1 1.6
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618
0.641
R 40 W 15.7 * on sales type
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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