GP7NB60KDFP

STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH™ IGBT TYPE STGP7NB60KD STGP7NB60KDFP STGB7NB60KD s s s s s s s s VCES 600 V 600 V 600 V VCE(sat) < 2.8 V < 2.8 V < 2.8 V IC 7A 7A 7A 3 1 2 1 2 3 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE TO-220 TO-220FP 3 1 D²PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ORDER CODES PART NUMBER STGP7NB60KD STGB7NB60KDT4 STGP7NB60KDFP MARKING GP7NB60KD GB7NB60KD GP7NB60KDFP PACKAGE TO-220 D2PAK TO-220FP PACKAGING TUBE TAPE & REEL TUBE May 2004 1/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STGP7NB60KD STGP7NB60KDFP STGB7NB60KD VCES VECR VGE IC IC ICM ( ) PTOT VISO Tstg Tj Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C.(t= 1 sec; Tc= 25°C) Storage Temperature Max. Operating Junction Temperature 80 0.64 -–55 to 150 150 600 20 ±20 14 7 56 25 0.20 2500 V V V A A A W W/°C V °C °C Unit ( ) Pulse width limited by safe operating area THERMAL DATA TO-220 D2PAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 1.56 62.5 TO-220FP 5 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC= 250 µA, VGE= 0 VCE= Max Rating, TC= 25°C VCE= Max Rating, TC= 125°C VGE= ±20V, VCE= 0 Min. 600 50 500 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250µA VGE = 15V, IC = 7 A VGE= 15V, IC= 7 A, Tj= 125°C Min. 5 2.3 1.9 Typ. Max. 7 2.8 Unit V V V 2/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Cies Coes Cres Qg Qge Qgc tscw Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Short Circuit Withstand Time Test Conditions VCE = 15 V , IC =7 A VCE= 25V, f= 1 MHz, VGE= 0 Min. Typ. 3.7 495 77 13 32.7 5.9 18.3 10 45 Max. Unit S pF pF pF nC nC nC µs VCE = 480V, IC = 7 A, VGE = 15V Vce= 0.5 VBR(CES), VGE= 15 V Tj= 125°C , RG= 10 Ω SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 7 A RG = 10Ω, VGE = 15 V VCC= 480 V, IC = 7 A, RG= 10Ω VGE= 15 V,Tj = 125°C Min. Typ. 15 6 980 95 Max. Unit ns ns A/µs µJ SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 7 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Test Conditions Vcc = 480 V, IC = 7 A, RGE = 10 Ω , VGE = 15 V Min. Typ. 105 30 50 100 140 200 227 68 52 150 300 395 Max. Unit ns ns ns ns µJ µJ ns ns ns ns µJ µJ (**) Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3.5 A If = 3.5 A, Tj = 125 °C If = 7 A ,VR = 35 V, Tj =125°C, di/dt = 100 A/µs 1.4 1.2 50 70 2.7 Test Conditions Min. Typ. Max. 7 56 1.9 Unit A A V V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Thermal Impedance for TO-220/D2PAK Thermal Impedance for TO-220FP Turn-Off SOA 6/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 øP Q 8/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 9/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 8º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 10/12 3 1 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 11/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 12/12