GW33IH120D

STGW33IH120D 30 A - 1200 V - very fast IGBT Features ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Very soft ultra fast recovery antiparallel diode 2 1 3 Applications ■ ■ Induction cooking, microwave oven Soft switching application TO-247 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. This device is well suited for the resonant or soft switching application. Figure 1. Internal schematic diagram Table 1. Device summary Marking GW33IH120D Package TO-247 Packaging Tube Order code STGW33IH120D March 2008 Rev 1 1/14 www.st.com 14 Contents STGW33IH120D Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGW33IH120D Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC (1) IC (1) ICL (2) ICP (3) VGE PTOT IF IFSM Tj 1. Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at 25 °C Collector current (continuous) at 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Total dissipation at TC = 25 °C Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp = 10 ms sinusoidal Operating junction temperature Value 1200 60 30 45 45 ±25 220 30 100 –55 to 150 Unit V A A A A V W A A °C Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case IGBT max. Thermal resistance junction-case diode max. Thermal resistance junction-ambient max. Value 0.57 1.6 50 Unit °C/W °C/W °C/W 3/14 Electrical characteristics STGW33IH120D 2 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) VGE(th) ICES IGES gfs (1) IC = 1 mA 1200 V Collector-emitter saturation VGE= 15 V, IC= 20 A voltage VGE= 15 V, IC= 20 A, Tc =125 °C Gate threshold voltage Collector-cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 1 mA VCE =1200 V VCE =1200 V, Tc=125 °C VGE =± 20 V VCE = 25 V, IC= 20 A 3.75 2.2 2.0 2.8 V V V µA mA nA S 5.75 500 10 ± 100 20 1. Pulsed: pulse duration= 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2900 162 30 127 18 50 Max. Unit pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE=0 VCE = 960 V, IC= 20 A,VGE=15 V 4/14 STGW33IH120D Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 960 V, IC = 20 A , RG= 10 Ω VGE= 15 V, (see Figure 17) VCC = 960 V, IC = 20 A , RG= 10 Ω VGE= 15 V, Tc= 125 °C (see Figure 17) VCC = 960 V, IC = 20 A , RG= 10 Ω VGE= 15 V, (see Figure 17) VCC = 960 V, IC = 20 A RG= 10 Ω VGE= 15 V, , Tc= 125 °C (see Figure 17) Min. Typ. 46 10 1660 45 12 1500 102 284 180 200 424 316 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns Table 7. Symbol Eon (1) Eoff (2) Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 960 V, IC = 20 A , RG= 10 Ω VGE= 15 V, (see Figure 17) VCC = 960 V, IC = 20 A , RG= 10 Ω VGE= 15 V, Tc= 125 °C (see Figure 17) Min. Typ. 1.5 3.4 4.9 2.3 6.4 8.7 Max. Unit mJ mJ mJ mJ mJ mJ Ets Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGW33IH120D Table 8. Symbol VF trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 20 A IF = 20 A, TC = 125 °C IF = 20 A, VR = 45 V, di/dt = 100 A/µs (see Figure 20) IF = 20 A, VR = 45 V, Tc = 125 °C, di/dt = 100 A/µs (see Figure 20) Min. Typ. 1.9 1.7 85 235 5.6 152 722 9 Max. Unit V V ns nC A ns nC A 6/14 STGW33IH120D Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Output characteristics HV42580 IC(A) Figure 3. IC(A) Transfer characteristics HV42585 VCE=15V VGE=15 V 250 14 V 13 V 12 V 250 300 200 11 V 200 150 10 V 150 9V 100 100 8V 50 50 7V 0 5 10 15 0 VCE(V) 0 5 10 15 VGE(V) Figure 4. Transconductance HV42590 TC=-50°C Figure 5. Collector-emitter on voltage vs temperature HV42600 Gfs(S) 26 24 22 20 18 16 14 12 10 8 6 4 2 0 5 10 15 20 VCE(sat) (V) 2.5 IC=40A 2.375 25°C 125°C 2.25 2.125 2.0 1.875 1.75 1.625 IC(A) IC=20A IC=10A 1.5 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 6. Gate charge vs gate-source voltage Figure 7. HV42630 VCC=960V IC=20A Capacitance variations HV42620 VGE(V) 16 14 12 10 8 C(pF) 4500 4000 3500 3000 2500 Coes 2000 1500 1000 Cres 500 f=1MHz Cies 6 4 2 0 0 50 100 150 Qg(nC) 0 10 20 30 40 VCE(V) 7/14 Electrical characteristics Figure 8. Normalized gate threshold voltage vs temperature HV42610 VGE(th) (norm) IC=250µA 1.1 1.05 2.05 STGW33IH120D Figure 9. VCE(sat) (V) 2.45 2.25 TC=-50°C TC=125°C Collector-emitter on voltage vs collector current HV42650 1.0 1.85 0.95 1.65 0.9 1.45 0.85 0.8 0.75 0.7 -75 100 125 150 TJ(°C) 1.25 1.05 0.85 TC=25°C -50 -25 0 25 50 75 0 10 20 30 40 IC(A) Figure 10. Normalized breakdown voltage vs temperature HV42640 BVCES (norm) 1.1 1.075 1.05 1.025 1 0.975 0.95 0.925 0.9 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) IC=1mA Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGW33IH120D Figure 14. Thermal impedance Electrical characteristics Figure 15. Turn-off SOA HV42690 IC(A) 10 1 0.1 1 10 100 1000 VCE(V) Figure 16. Emitter-collector diode characteristics IFM(A) 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Tj=150°C (maximum values) Tj=25°C (maximum values) Tj=150°C (typical values) VFM(V) 9/14 Test circuit STGW33IH120D 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Test circuit for inductive load switching Figure 19. Switching waveform Figure 20. Diode recovery time waveform 10/14 STGW33IH120D Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW33IH120D TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 12/14 STGW33IH120D Revision history 5 Revision history Table 9. Date 12-Mar-2008 Document revision history Revision 1 Initial release Changes 13/14 STGW33IH120D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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