GW35HF60WDB

STGW35HF60WD 35 A, 600 V ultra fast IGBT Features ■ ■ ■ ■ ■ Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode 2 1 3 Applications ■ ■ ■ Welding High frequency converters Power factor correction Figure 1. TO-247 Description The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). Internal schematic diagram Table 1. Device summary Marking(1) GW35HF60WDA Package Packaging Order code STGW35HF60WD GW35HF60WDB GW35HF60WDC TO-247 Tube 1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification. STMicroelectronics reserves the right to ship from any group according to production availability. May 2010 Doc ID 15592 Rev 5 1/12 www.st.com 12 Electrical ratings STGW35HF60WD 1 Electrical ratings Table 2. Symbol VCES IC IC (1) (1) Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Continuous collector current at TC = 100 °C Pulsed collector current Turn-off latching current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp= 10 ms sinusoidal Total dissipation at TC = 25 °C Storage temperature – 55 to 150 Operating junction temperature °C Value 600 60 35 150 80 ± 20 30 120 200 Unit V A A A A V A A W ICP(2) ICL (3) VGE IF IFSM PTOT Tstg Tj 1. Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C Table 3. Symbol Rthj-case Rthj-amb Thermal data Parameter Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient Value 0.63 1.5 50 Unit °C/W °C/W °C/W 2/12 Doc ID 15592 Rev 5 STGW35HF60WD Electrical characteristics 2 Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. Symbol Static Parameter Collector-emitter breakdown voltage (VGE = 0) Collector-emitter saturation voltage Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Test conditions Min. Typ. Max. Unit V(BR)CES IC = 1 mA VGE = 15 V, IC= 20 A VGE = 15V, IC = 20 A,TJ= 125 °C VCE = VGE, IC = 1 mA VCE = 600 V VCE = 600 V, TJ = 125 °C VGE = ±20 V 600 2.5 V VCE(sat) VGE(th) ICES IGES V 1.65 3.75 5.75 250 1 ± 100 V µA mA nA Table 5. Symbol VCE(sat) classification Value Parameter Group Min. A 1.68 1.88 2.13 Collector-emitter saturation voltage VGE = 15 V, IC= 20 A Max. 1.92 2.17 2.50 V Unit VCE(sat) B C Table 6. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. Max. Unit 2400 235 50 140 13 52 pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 400 V, IC = 20 A, VGE = 15 V, (see Figure 17) - - - - Doc ID 15592 Rev 5 3/12 Electrical characteristics STGW35HF60WD Table 7. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, (see Figure 16) VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, TJ = 125 °C (see Figure 16) VCC = 400 V, IC = 20 A, RGE = 10 Ω, VGE = 15 V (see Figure 16) VCC = 400 V, IC = 20 A, RGE = 10 Ω, VGE =15 V, TJ = 125 °C (see Figure 16) Min. Typ. 30 15 1650 30 15 1600 30 175 40 50 225 70 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns - - - - - - - - Table 8. Symbol Eon(1) Eoff Ets Eon(1) Eoff Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, (see Figure 18) VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, TJ = 125 °C (see Figure 18) Min. Typ. 290 185 475 420 350 770 530 Max. Unit µJ µJ µJ µJ µJ µJ - - 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). Eon include diode recovery energy. Table 9. Symbol VF trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 20 A IF = 20 A, TJ = 125 °C IF = 20 A,VR = 50 V, di/dt = 100 A/µs (see Figure 19) IF = 20 A,VR = 50 V, TJ =125 °C, di/dt = 100 A/µs (see Figure 19) Min. Typ. 1.8 1.4 50 90 3 135 375 5.5 Max. 2.25 Unit V V ns nC A ns nC A - - - - 4/12 Doc ID 15592 Rev 5 STGW35HF60WD Electrical characteristics 2.1 Figure 2. IC200 (A) Electrical characteristics (curves) Output characteristics VGE = 15 V 11 V Figure 3. 200 IC (A) Transfer characteristics 10 V VCE = 10 V 150 150 9V 100 8V 50 100 7V VGE = 6 V 50 0 0 2 4 6 8 VCE (V) 10 0 0 3 6 9 VGE (12 V) Figure 4. 1.6 VCE(sat) (norm) 1.4 1.2 1 0.8 0.6 0.4 0 Normalized VCE(sat) vs. IC Figure 5. 1.6 VCE(sat) (norm) Normalized VCE(sat) vs. temperature VGE = 15 V IC = 80 A IC = 60 A TJ = -50 ºC TJ = 25 ºC 1.4 1.2 TJ = 150 ºC 1 10 A IC = 40 A 30 A IC = 5 A 20 A VGE = 15 V 0.8 20 40 60 80 IC (A) 0.6 -50 0 50 100 TJ (°C) 150 Figure 6. 1.1 VCES (norm) 1.05 Normalized breakdown voltage vs. Figure 7. temperature 1.2 VGE(th) (norm) 1.1 1 Normalized gate threshold voltage vs. temperature 1 0.9 0.8 VGE = VCE 0.7 IC = 250 µA IC = 1 mA 0.95 0.9 -50 0 50 100 TJ 150 (°C) 0.6 -50 0 50 100 TJ 150 (°C) Doc ID 15592 Rev 5 5/12 Electrical characteristics Figure 8. VGE 16 (V) STGW35HF60WD Figure 9. C5000 (pF) Gate charge vs. gate-emitter voltage Capacitance variations 12 VCC = 400 V IC = 20 A 4000 f = 1 MHz VGE = 0 3000 8 2000 Cies 4 1000 Coes Cres 0 0 0 30 60 90 120 QG 150 (nC) 0 10 20 30 40 VCE (50 V) Figure 10. Switching losses vs temperature E 450 (µJ) 400 350 EON EOFF Figure 11. Switching losses vs. gate resistance E (µJ) 2000 1500 EOFF EON 300 250 1000 VCE = 400 V, VGE= 15 V 200 150 25 50 75 100 TJ 125 (°C) IC = 20 A, RG =10 Ω 500 VCE = 400 V, VGE= 15 V IC = 20 A, TJ = 125 °C 0 0 60 120 180 240 Rg (Ω) Figure 12. Switching losses vs. collector current E (µJ) 1000 Figure 13. Turn-off SOA 1000 IC (A) 800 EON 100 600 EOFF 400 VCE = 400 V, VGE = 15 V RG = 10 Ω, TJ = 125 °C 10 VGE = 15 V, RG = 10 Ω 1 TC = 150 °C 200 0 10 15 20 25 30 35 IC 40 (A) 0.1 1 10 100 VCE (V) 1000 6/12 Doc ID 15592 Rev 5 STGW35HF60WD Figure 14. Diode forward on voltage Electrical characteristics Figure 15. Thermal impedance Doc ID 15592 Rev 5 7/12 Test circuits STGW35HF60WD 3 Test circuits Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching AM01504v1 AM01505v1 Figure 18. Switching waveform Figure 19. Diode recovery time waveform 90% VG 10% 90% VCE Tr(Voff) Tcross di/dt IF ta 10% trr tb Qrr t 90% IRRM IRRM 10% IC Td(off) Td(on) Tr(Ion) Ton Toff Tf VF di/dt AM01506v1 AM01507v1 8/12 Doc ID 15592 Rev 5 STGW35HF60WD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15592 Rev 5 9/12 Package mechanical data STGW35HF60WD TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 10/12 Doc ID 15592 Rev 5 STGW35HF60WD Revision history 5 Revision history Table 10. Date 14-Apr-2009 03-Aug-2009 02-Sep-2009 30-Sep-2009 10-May-2010 Document revision history Revision 1 2 3 4 5 Initial release. Inserted dynamic parameters on Table 6 an Table 7 Document status promoted from preliminary data to datasheet Minor text changes throughout the document Removed watermark Inserted VCE(sat) grouping A, B and C (see Table 5: VCE(sat) classification) Inserted Section 2.1: Electrical characteristics (curves) Changes Doc ID 15592 Rev 5 11/12 STGW35HF60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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